Results 131 to 140 of about 4,919,596 (331)
This study introduces a novel multi‐scale scaffold design using L‐fractals arranged in Archimedean tessellations for tissue regeneration. Despite similar porosity, tiles display vastly different tensile responses (1–100 MPa) and deformation modes. In vitro experiments with hMSCs show geometry‐dependent growth and activity. Over 55 000 tile combinations
Maria Kalogeropoulou +4 more
wiley +1 more source
Parallel hierarchical memory (PI memory) is a new type of memory that is designed to improve the performance of parallel computing systems. PI memory is composed of two blocks: a mask RAM and a tail element RAM.
Leonid Timchenko +7 more
doaj +1 more source
This study demonstrated single‐crystalline PbTiO3‐based memristors with atomically sharp interfaces, well‐ordered lattices, and minimal lattice mismatch. The devices exhibited an ON/OFF ratio exceeding 105, high stability, and rich resistance‐state modulation.
Haining Li +7 more
wiley +1 more source
Emergence of Light‐Transforming Layered Hybrid Halide Perovskites
The emerging class of light‐transforming layered halide perovskite materials is reviewed, outlining challenges for their development and perspectives toward application in the future. Abstract Layered hybrid halide perovskites (LHPs) have attracted considerable attention in optoelectronics.
Ghewa AlSabeh, Jovana V. Milić
wiley +1 more source
Positive‐Tone Nanolithography of Antimony Trisulfide with Femtosecond Laser Wet‐Etching
A butyldithiocarbamic acid (BDCA) etchant is used to fabricate various micro‐ and nanoscale structures on amorphous antimony trisulfide (a‐Sb2S3) thin film via femtosecond laser etching. Numerical analysis and experimental results elucidate the patterning mechanism on gold (reflective) and quartz (transmissive) substrates.
Abhrodeep Dey +12 more
wiley +1 more source
Steep‐Switching Memory FET for Noise‐Resistant Reservoir Computing System
We demonstrate the steep‐switching memory FET with CuInP2S6/h‐BN/α‐In2Se3 heterostructure for application in noise‐resistant reservoir computing systems. The proposed device achieves steep switching characteristics (SSPGM = 19 mV/dec and SSERS = 23 mV/dec) through stabilization between CuInP2S6 and h‐BN.
Seongkweon Kang +6 more
wiley +1 more source
Learning Efficient Lexically-Constrained Neural Machine Translation with External Memory [PDF]
Ya Li +4 more
openalex +1 more source
Photoswitching Conduction in Framework Materials
This mini‐review summarizes recent advances in state‐of‐the‐art proton and electron conduction in framework materials that can be remotely and reversibly switched on and off by light. It discusses the various photoswitching conduction mechanisms and the strategies employed to enhance photoswitched conductivity.
Helmy Pacheco Hernandez +4 more
wiley +1 more source
Investigation of fast initialization of spacecraft bubble memory systems [PDF]
Bubble domain technology offers significant improvement in reliability and functionality for spacecraft onboard memory applications. In considering potential memory systems organizations, minimization of power in high capacity bubble memory systems ...
Hayes, P. J. +2 more
core +1 more source

