Results 161 to 170 of about 1,336,530 (337)

Smartphones Helping Memory-Impaired Individuals Overcome Inconveniences During Daily Living

open access: yesGerontology and Geriatric Medicine
The external compensatory means recommended for rehabilitation of memory disorder must consist of a means for storing information externally and a clue for accessing the externally stored information. Writing down the information on a paper pocketbook is
Kira Masaki OTR, MA   +3 more
doaj   +1 more source

Building a parallel pipelined external memory algorithm library [PDF]

open access: green, 2009
A. Beckmann   +2 more
openalex   +1 more source

Enhanced Magnetization Switching Efficiency via Orbital‐Current‐Induced Torque in Ti/Ta (Pt)/CoFeB/MgO Structures

open access: yesAdvanced Functional Materials, EarlyView.
The orbital‐current‐induced torque is investigated as an efficient method for controlling magnetization direction. By introducing Ti as an orbital current source in Ti/Ta (or Pt)/CoFeB/MgO structures, the switching current is reduced by ∼25% compared to a conventional spin‐orbit torque structure of Ta/CoFeB/MgO.
So y. Shin   +3 more
wiley   +1 more source

Ab Initio Study on 3D Anisotropic Ferroelectric Switching Mechanism and Coercive Field in HfO2 and ZrO2

open access: yesAdvanced Functional Materials, EarlyView.
This study uncovers a new switching mechanism in HfO2 and ZrO2, where the absence of a non‐polar layer along the a‐direction induces interaction between polar layers. Consequently, the switching barriers for growth are lower than those for nucleation in this direction, leading to a size‐dependent coercive field that matches experimental observations ...
Kun Hee Ye   +6 more
wiley   +1 more source

The World as an External Memory: The Price of Saccades in a Sensorimotor Task. [PDF]

open access: yesFront Behav Neurosci, 2018
Melnik A   +3 more
europepmc   +1 more source

A Novel Approach to Implementing Artificial Thalamic Neurons with Ferroelectric Transistors

open access: yesAdvanced Functional Materials, EarlyView.
Artificial neurons created using CMOS technology often require a large number of transistors and capacitors. This study introduces an artificial thalamic neuron that employs only five CMOS compatible ferroelectric transistors. The manufactured thalamic neuron demonstrates leaky integrate‐and‐fire‐or‐burst (LIFB) functionalities, featuring self ...
Andreas Grenmyr   +7 more
wiley   +1 more source

Quantum Emitters in Hexagonal Boron Nitride: Principles, Engineering and Applications

open access: yesAdvanced Functional Materials, EarlyView.
Quantum emitters in hexagonal boron nitride have emerged as a promising candidate for quantum information science. This review examines the fundamentals of these quantum emitters, including their level structures, defect engineering, and their possible chemical structures.
Thi Ngoc Anh Mai   +8 more
wiley   +1 more source

An external memory data structure for shortest path queries

open access: bronze, 2002
D. A. W. Hutchinson   +2 more
openalex   +1 more source

Integration of Perovskite/Low‐Dimensional Material Heterostructures for Optoelectronics and Artificial Visual Systems

open access: yesAdvanced Functional Materials, EarlyView.
Heterojunctions combining halide perovskites with low‐dimensional materials enhance optoelectronic devices by enabling precise charge control and improving efficiency, stability, and speed. These synergies advance flexible electronics, wearable sensors, and neuromorphic computing, mimicking biological vision for real‐time image analysis and intelligent
Yu‐Jin Du   +11 more
wiley   +1 more source

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