Coherent quasi-particles-to-incoherent hole-carriers crossover in underdoped cuprates
, 2009 In underdoped cuprates, only a portion of the Fermi surface survives as Fermi arcs due to pseudogap opening. In hole-doped La$_{2}$CuO$_4$, we have deduced the "coherence temperature" $T_{coh}$ of quasi-particles on the Fermi arc above which the ...
A. Fujimori +13 more
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Bending Two-Dimensional Materials To Control Charge Localization and Fermi-Level Shift.
Nano letters (Print), 2016 High-performance electronics requires the fine control of semiconductor conductivity. In atomically thin two-dimensional (2D) materials, traditional doping technique for controlling carrier concentration and carrier type may cause crystal damage and ...
Liping Yu, A. Ruzsinszky, J. Perdew
semanticscholar +1 more source
FERMI AND NON-FERMI LIQUID BEHAVIOR OF THE MULTICHANNEL RESONANT-LEVEL MODEL
Acta Physica Sinica, 1996 In this paper we have transformed the three-dimensional multichannel resonant-level model into one-dimensional model using ths s-wave scattering approximation, and then map it onto a single channel Kondo model at the operator level by use of a bosonization technique.
Yuan Qing-Shan, Zhang Yu-Mei, Chen Hong
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Fermi Level Position at Metal-Semiconductor Interfaces [PDF]
, 1964 Carver Mead, W. G. Spitzer
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Contact Potentials, Fermi Level Equilibration, and Surface Charging.
Langmuir, 2016 This article focuses on contact electrification from thermodynamic equilibration of the electrochemical potential of the electrons of two conductors upon contact.
P. Peljo, J. Manzanares, H. Girault
semanticscholar +1 more source
Quantum interference probed by the thermovoltage in Sb-doped Bi2Se3 nanowires
iScience, 2023 Summary: The magnetic-flux-dependent dispersions of sub-bands in topologically protected surface states of a topological insulator nanowire manifest as Aharonov–Bohm oscillations (ABOs) observed in conductance measurements, reflecting the Berry’s phase ...
Duhyuk Kwon +5 more
doaj
Effect of Fermi-Level Motion on Normal-State Properties ofβ-Tungsten Superconductors [PDF]
, 1967 Roger W. Cohen +2 more
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Direct Measurements of Fermi Level Pinning at the Surface of Intrinsically n-Type InGaAs Nanowires.
Nano letters (Print), 2016 Surface effects strongly dominate the intrinsic properties of semiconductor nanowires (NWs), an observation that is commonly attributed to the presence of surface states and their modification of the electronic band structure. Although the effects of the
M. Speckbacher +10 more
semanticscholar +1 more source
Overcoming the Fermi-Level Pinning Effect in the Nanoscale Metal and Silicon Interface. [PDF]
Nanomaterials (Basel), 2023 Su ZC, Lin CF.
europepmc +1 more source
EFFECTIVE QUASIPARTICLE RECOMBINATION TIMES AND ELECTRONIC DENSITY OF STATES AT THE FERMI LEVEL IN SUPERCONDUCTING FILMS [PDF]
, 1978 Peter W. Epperlein +2 more
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