Results 151 to 160 of about 334,237 (330)
Charge density waves and Fermi level pinning in monolayer and bilayer
Shu-Ze Wang +6 more
openalex +1 more source
This work proposes a dual‐surface reaction strategy to optimize the interfacial contacts in organic–inorganic photodetectors. 1,4,5,8,9,11‐hexaazatriphenylene hexacarbonitrile (HAT‐CN) and ytterbium layers are designed to react with the Si surface, thus minimizing noise.
Yibo Zhang +9 more
wiley +1 more source
Modulation of Contact Resistance of Dual-Gated MoS2 FETs Using Fermi-Level Pinning-Free Antimony Semi-Metal Contacts. [PDF]
Ngo TD +6 more
europepmc +1 more source
Unprecedented Spin‐Lifetime of Itinerant Electrons in Natural Graphite Crystals
Graphite exhibits extraordinary spintronic potential, with electron spin lifetimes reaching 1,000 ns at room temperature ‐ over 100 times longer than graphene‐based devices. Magnetic resonance spectroscopy reveals strong anisotropy: out‐of‐plane spins live 50 times longer than their in‐plane counterparts.
Bence G. Márkus +5 more
wiley +1 more source
Revealing Fermi surface evolution and Berry curvature in an ideal type-II Weyl semimetal
In type-II Weyl semimetals (WSMs), the tilting of the Weyl cones leads to the coexistence of electron and hole pockets that touch at the Weyl nodes.
Qianni Jiang +13 more
doaj +1 more source
Metal and Metal Halogenide-Filled Single-Walled Carbon Nanotubes: Kinetics, Electronic Properties, Engineering the Fermi Level. [PDF]
Kharlamova MV, Kramberger C.
europepmc +1 more source
Dimensionality-Reduced Fermi Level Pinning in Coplanar 2D Heterojunctions
Henry Yu +3 more
openalex +2 more sources
Dual‐phase MoC/Mo2C/CoNC nanoframes are synthesized via a MOF‐on‐MOF strategy, demonstrating a large salt adsorption capacity, a low energy consumption, and an excellent cycling stability. In situ/ex situ characterizations and DFT calculations reveal that the MoC/Mo2C dual phase transition facilitates Na+ adsorption/desorption, while interface‐induced ...
Feifei Pang +8 more
wiley +1 more source
The study explores structural and magnetic properties of one of the most recent topological quantum materials (MnBi2Te4). The Mn‐poor structure leads to stacking faults (quintuple layer ‐ QL of Bi2Te3 formation instead of a septuple layer ‐ SL of MnBi2Te4), resulting in a coexistence between weak antiferromagnetism and ferromagnetism.
Wesley F. Inoch +10 more
wiley +1 more source

