Results 201 to 210 of about 334,237 (330)

Comparative operando XPS studies of quasi-Fermi level splitting and open-circuit voltage in CZTSe/CdS and CIGS/CdS junctions and device structures

, 2019
Glenn Teeter, Steven P. Harvey, Craig L. Perkins, K. Ramanathan, Ingrid Repins   +4 more
openalex   +2 more sources

Dual‐Interface Engineering of the Source Electrode to Overcome the Intrinsic Injection‐Leakage Trade‐Off in Organic Schottky Barrier Transistors

Advanced Functional Materials, EarlyView.
A charge injection layer is introduced via RIE to decouple the dual functions of the source electrode: lowering contact resistance through doping to enhance charge injection, while SAM modification on the top surface minimizes leakage current. This strategy enables OSBTs to achieve a high on/off ratio with improved stability and performance.
Hye Ryun Sim, Sangjun Lee, Geon‐Hee Nam, Jieun Kwon, Junseo Kim, Syed Zahid Hassan, Dae Sung Chung   +6 more
wiley   +1 more source

Barrier-Free Carrier Injection in 2D WSe₂-MoSe₂ Heterostructures via Fermi-Level Depinning. [PDF]

Nanomaterials (Basel)
Dai TJ, Xiao X, Fan ZY, Zhang ZY, Zhou Y, Xu YC, Sun J, Liu XF.   +7 more
europepmc   +1 more source

Quasi-Fermi level splitting in nanoscale junctions from ab initio. [PDF]

Proc Natl Acad Sci U S A, 2020
Lee J, Yeo H, Kim YH.
europepmc   +1 more source

Self‐Reconstruction of Dual‐Morphology Copper‐Iron Selenides for Cost‐Effective Oxygen Evolution Toward Industrial Alkaline Water Splitting

Advanced Functional Materials, EarlyView.
Departing from conventional Ni/Co‐based catalysts, this work presents a Ni/Co‐free CuFe–Se/CFF electrocatalyst with nanoblock–nanorod morphology. It delivers 1000 mA cm−2 at 330 mV overpotential and 620 h stability for the oxygen evolution reaction (OER).
Jiajun Wang, Jianjiang Zhao, Jiajun Zhang, Fei Wang, Tongtong Li, Ruixiang Ren, Yunmin Chen, Hua Wei   +7 more
wiley   +1 more source

Redox Potentials of Colloidal n-Type ZnO Nanocrystals: Effects of Confinement, Electron Density, and Fermi-Level Pinning by Aldehyde Hydrogenation

, 2015
Gerard M. Carroll, Alina M. Schimpf, Emily Y. Tsui, Daniel R. Gamelin   +3 more
openalex   +2 more sources

In Materia Shaping of Randomness with a Standard Complementary Metal‐Oxide‐Semiconductor Transistor for Task‐Adaptive Entropy Generation

Advanced Functional Materials, EarlyView.
This study establishes a materials‐driven framework for entropy generation within standard CMOS technology. By electrically rebalancing gate‐oxide traps and Si‐channel defects in foundry‐fabricated FDSOI transistors, the work realizes in‐materia control of temporal correlation – achieving task adaptive entropy optimization for reinforcement learning ...
Been Kwak, Ryun‐Han Koo, Youngchan Cho, Changhyeon Han, Dongbin Kim, Soi Jeong, Yunho Shin, Joonhyeok Choi, Jiseong Im, Jonghyun Ko, Jong‐Ho Lee, Jangsaeng Kim, Youngho Kang, Wonjun Shin, Daewoong Kwon   +14 more
wiley   +1 more source

Non-volatile Fermi level tuning for the control of spin-charge conversion at room temperature. [PDF]

Nat Commun
Choi J, Park J, Noh S, Lee J, Lee S, Choe D, Jung H, Jo J, Oh I, Han J, Kwon SY, Ahn CW, Min BC, Jin H, Kim CH, Kim KW, Yoo JW.   +16 more
europepmc   +1 more source

Author Correction: Enhancing doping contrast and optimising quantification in the scanning electron microscope by surface treatment and Fermi level pinning. [PDF]

Sci Rep, 2020
Chee AKW.
europepmc   +1 more source

Theoretical insights into interfacial-layer control of Fermi level depinning and dipole engineering for Schottky barrier height reduction in NiSi/Si systems

Zhongming Liu, Feng Lu, Zhigang Ji, Miaojia Yuan, Sheng Ye, Maokun Wu, Haobo Lin, Runsheng Wang, Wei-hua Wang   +8 more
openalex   +1 more source