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Advanced Electronic Materials, 2021
Effective control of 2D transistors polarity is a critical challenge in the process for integrating 2D materials into semiconductor devices. Herein, a doping‐free approach for developing tungsten diselenide (WSe2) logic devices by utilizing the van der ...
Tien Dat Ngo +9 more
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Effective control of 2D transistors polarity is a critical challenge in the process for integrating 2D materials into semiconductor devices. Herein, a doping‐free approach for developing tungsten diselenide (WSe2) logic devices by utilizing the van der ...
Tien Dat Ngo +9 more
semanticscholar +1 more source
Applied Physics Letters, 1983
The conventional concept that there is a so-called Fermi level for electronic states in solution which can be identified with the reversible potential on the vacuum scale of a redox couple present in solution (and in equilibrium with an electrode therein) is not valid. The inner potential of the solution phase should be added to the redox potential (on
John O’M. Bockris, Shahed U. M. Khan
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The conventional concept that there is a so-called Fermi level for electronic states in solution which can be identified with the reversible potential on the vacuum scale of a redox couple present in solution (and in equilibrium with an electrode therein) is not valid. The inner potential of the solution phase should be added to the redox potential (on
John O’M. Bockris, Shahed U. M. Khan
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Fermi-level pinning at heterojunctions
Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, 1983We have extended our calculations for defect levels at semiconductor free surfaces to ideal semiconductor heterojunctions. We find that the Fermi-energy pinning observed for deposition of Ge and Si (as well as metals and oxygen) on GaAs(110) surfaces is explained very satisfactorily by free-surface antisite defect levels, but cannot be explained, even ...
John D. Dow +2 more
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Reversibility of Fermi level pinning
Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, 1988By depositing monolayer coverage of Ag on freshly cleaved, clean GaAs(110) surface, the surface Fermi level was found to pin at 0.45±0.05 eV above valence band maximum (VBM) for p-GaAs and 0.65±0.05 eV above VBM for n-GaAs, due to the formation of midgap electronic states.
I. Lindau +4 more
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A Note on Fermi Levels, Quasi-Fermi Levels, and Terminal Voltages in Semiconductor Devices
American Journal of Physics, 1963The concepts of electrostatic and electrochemical potentials as they bear on the volt-ampere characteristics of semiconductor devices are reviewed. The meaning of voltage drops across portions of semiconductor materials containing excess carriers is clarified.
D.L. Scharfetter +2 more
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Catalysis from A to Z, 2020
The Fermi Level is the energy level which is occupied by the electron orbital at temperature equals 0 K. The level of occupancy determines the conductivity of different materials.
R. Imbihl
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The Fermi Level is the energy level which is occupied by the electron orbital at temperature equals 0 K. The level of occupancy determines the conductivity of different materials.
R. Imbihl
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Unpinning of Fermi level in nanocrystalline semiconductors
Applied Physics Letters, 2004A theoretical model has been developed to interpret the size dependent behavior of nanostructured metal-oxide semiconductors. It is based on the determination of the surface-state density, which pins the Fermi level of the semiconductor, thus removing the linear relationship between the work function and the Schottky barrier.
MALAGU', Cesare +3 more
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Journal of Physics: Condensed Matter, 2002
Diamond is a wide-band-gap material with large donor and acceptor ionization energies. In principle, at room temperature and below, the Fermi energy is pinned close to the donor or acceptor level, depending on which is present in the higher concentration.
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Diamond is a wide-band-gap material with large donor and acceptor ionization energies. In principle, at room temperature and below, the Fermi energy is pinned close to the donor or acceptor level, depending on which is present in the higher concentration.
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Fermi level and current transport of Bi12GeO2
Journal of Applied Physics, 1987A photoelectrochemical resistor was constructed using a bismuth germanium oxide electrode and a liquid junction. Current transport consists of the oxidation and reduction of water by holes and electrons, and the device exhibits ideal current voltage characteristics with a ratio of light to dark current greater than 104.
Christian M. Braun, Akira Fujishima
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Theory of the Fermi-level energy in semiconductor superlattices
Physical Review B, 1991A theoretical study of the properties of the Fermi level in semiconductor superlattices (SL's) is made which is based upon the carrier occupation of the minibands in thermal equilibrium. We find, for a fixed carrier density and temperature, that the SL Fermi level can differ significantly from that obtained using commonly employed three-dimensional ...
James H. Luscombe +7 more
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