Gated PN Junction in Ambipolar MoS2 for Superior Self‐Powered Photodetection
A high‐quality gated pn junction based on ambipolar molybdenum disulfide (MoS2) is demonstrated by employing a partial‐gate structure and a Pt bottom contact that forms a semi‐van der Waals interface, facilitating efficient hole injection into the channel.
Jaeha Hwang+12 more
wiley +1 more source
Intercalation of Few-Layer Graphite Flakes with FeCl3: Raman Determination of Fermi Level, Layer by Layer Decoupling, and Stability [PDF]
Weijie Zhao+3 more
openalex +1 more source
The design of cathode materials is the key to solving the practical application of AZIBs. In this work, the formation of the built‐in electric field in the NVO@CC material adjusts the electronic structure, showing high specific capacity and ultra‐long cycle stability, and achieving rapid diffusion of ions and good electrochemical kinetics.
Yan Ran+7 more
wiley +1 more source
Particular thermal metamaterials are widely used as daytime radiative coolers merely by embedding thermally emissive nanoparticles (NPs) in liquid resins to form scalable, yet highly efficient cooling films in a cost‐effective way. However, randomly dispersed NPs, prevalently used thus far, cause strong scattering, limiting NP content and cooling ...
YongDeok Cho+10 more
wiley +1 more source
Ultra-high Photovoltage (2.45 V) Forming in Graphene Heterojunction via Quasi-Fermi Level Splitting Enhanced Effect. [PDF]
Jia L, Zheng W, Lin R, Huang F.
europepmc +1 more source
Absence of photoemission from the Fermi level in potassium intercalated picene and coronene films: Structure, polaron, or correlation physics? [PDF]
Benjamin Mahns+2 more
openalex +1 more source
Fast‐Responding O2 Gas Sensor Based on Luminescent Europium Metal‐Organic Frameworks (MOF‐76)
Luminescent MOF‐76 materials based on Eu(III) and mixed Eu(III)/Y(III) show rapid and reversible changes in emission intensity in response to O2 with very short response times. The effect is based on triplet quenching of the linker ligands that act as photosensitizers. Average emission lifetimes of a few milliseconds turn out to be mostly unaffected by
Zhenyu Zhao+5 more
wiley +1 more source
Metal silicide Schottky barriers on Si and Ge show weaker Fermi level pinning [PDF]
Liang Lin, Yuzheng Guo, John Robertson
openalex +1 more source
Magnetic‐Field Dependent VB− Spin Decoherence in Hexagonal Boron Nitrides: A First‐Principles Study
This study investigates the decoherence of the VB− defect in h‐BN under external magnetic fields using first‐principles quantum many‐body simulations. A transition boundary distinguishing distinct decoherence regimes is identified, with its dependence on isotopic composition.
Jaewook Lee+3 more
wiley +1 more source
Enhanced Photocharacteristics by Fermi Level Modulating in Sb2 Te3 /Bi2 Se3 Topological Insulator p-n Junction. [PDF]
Hong SB+8 more
europepmc +1 more source