Results 241 to 250 of about 15,196,329 (270)
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Fermi Level in Amorphous Antimony Films
Physical Review, 1954Films of antimony were deposited by evaporation on interchangeable emitters in concentric-sphere, retarding-potential phototubes. Below thicknesses of about 300 A, they behaved as semiconductors. The Fermi level lay about 0.1 ev above the occupied band.
L. Apker, E. Taft
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Unpinning of the Fermi Level on GaAs by Flowing Water.
Applied Physics Letters, 1987Unpinning of the Fermi level on GaAs (100) surfaces by photochemical reactions resulting from simultaneous exposure of specimens to flowing water and light was recently reported. We discuss here a series of experiments carried out to provide further information on the changes in surface electronic structure responsible for unpinning of the Fermi level ...
Gary W. Stupian +2 more
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ACS Applied Materials and Interfaces, 2016
Z-scheme photocatalytic system shows superiority in degradation of refractory pollutants and water splitting due to the high redox capacities caused by its unique charge transfer behaviors.
Houfen Li +4 more
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Z-scheme photocatalytic system shows superiority in degradation of refractory pollutants and water splitting due to the high redox capacities caused by its unique charge transfer behaviors.
Houfen Li +4 more
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Adsorption-induced Fermi level pinning
Physics of the Solid State, 2008The adsorption-induced Fermi level pinning is shown to occur at the coverages Θ* corresponding to a shallow extremum or saturation of the work function of the system. Equations for Θ* are derived within a modified Anderson-Newns adsorption model. Experimental data on the adsorption of atoms of alkali, alkaline-earth (Ba), and rare-earth metals and ...
S. Yu. Davydov, S. V. Troshin
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Fermi-Level-Controlled Semiconducting-Separated Carbon Nanotube Films for Flexible Terahertz Imagers
ACS Applied Nano Materials, 2018Carbon-nanotube-related (CNT-related) materials and structures are highly anticipated as potential building blocks for future flexible electronics and photonics.
D. Suzuki +5 more
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The unusual mechanism of partial Fermi level pinning at metal-MoS2 interfaces.
Nano letters (Print), 2014Density functional theory calculations are performed to unravel the nature of the contact between metal electrodes and monolayer MoS2. Schottky barriers are shown to be present for a variety of metals with the work functions spanning over 4.2-6.1 eV ...
C. Gong +3 more
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An apparent paradox in the thermodynamics of Fermi levels
Solid State Communications, 1985Abstract We consider what happens when two metal plates having different work functions approach one another. If they are connected by a wire the plates will do work and build up an electric field in the space between them. The system does work even though the electron Fermi level is the same throughout.
Albert Rose, Richard Williams
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Fermi Level Manipulation through Native Doping in the Topological Insulator Bi2Se3.
ACS Nano, 2018The topologically protected surface states of three-dimensional (3D) topological insulators have the potential to be transformative for high-performance logic and memory devices by exploiting their specific properties such as spin-polarized current ...
L. Walsh +17 more
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Determination of localized level energies by a statistics of the fermi-level
Applied Physics, 1977For a very large number of samples of a semiconducting material, which is not intentionally doped, the Fermi-level coincides approximately with the respective energy levels of the accidential impurities and defects. Based on this fact, the energies of localized levels were determined from a statistic of the Fermi-level in CdSe platelets. These energies
F. Stöckmann, P. Belche, H. J. Hoffmann
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