Results 251 to 260 of about 15,196,329 (270)
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Magnetic Circular Dichroism near the Fermi Level

Physical Review Letters, 2006
We report the observation of enhanced magnetic circular dichroism (MCD) near the Fermi level using visible and ultraviolet lasers. More than 10% MCD asymmetry is achieved for a perpendicularly magnetized 12 ML (monolayer) Ni film on Cu(001). By changing the work function with the aid of cesium adsorption, the MCD asymmetry of is found to be enhanced ...
Takeshi Nakagawa, Toshihiko Yokoyama
openaire   +3 more sources

Fermi level stabilization at semiconductor surfaces

Surface Science, 1965
Abstract Photoelectric measurements have been carried out on silicon single crystals covered with small amounts of indium. It turns out that for low stages of coverage the only effect of the indium on the photoemission is a parallel shift of the whole spectral yield curve to lower energy.
J.J. Scheer, J. van Laar
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Tuning the Fermi-level of TiO2 mesoporous layer by lanthanum doping towards efficient perovskite solar cells.

Nanoscale, 2016
Tuning the band alignment is proved to be an effective way to facilitate carrier transportation and thus enhance the power conversion efficiency (PCE) of solar cells.
Xiaoxin Gao   +9 more
semanticscholar   +1 more source

Boosting photocatalytic hydrogen evolution of g-C3N4 catalyst via lowering the Fermi level of co-catalyst

Nano Reseach, 2021
Hairui Cai   +8 more
semanticscholar   +1 more source

The Fermi Level in Germanium at High Temperatures

Proceedings of the Physical Society, 1958
Some results are given of calculations on the Fermi level in doped and intrinsic germanium from room temperature to the melting point (~1200 deg K). Results of calculations are graphically summarized.
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Determination of the Fermi Level, Fermi Distribution and Activity Coefficient for n‐SiC(P) [PDF]

open access: possibleCrystal Research and Technology, 1982
AbstractA calculation was made of the Fermi level value and Fermi distribution at different temperatures, concentrations of impurities and degrees of compensation in acceptive silicon carbide, doped by aluminium. The dependence of the activity coefficient of aluminium in the silicon carbide on the concentration and the temperature was established.
openaire   +1 more source

Composition dependent Fermi level shifting of Au decorated MoS2 nanosheets

, 2016
In the present work, shifting of Fermi level of MoS2 nanosheets due to decoration of Au nanoparticles (Au NPs) is reported. Au NPs are grown on MoS2 nanosheets by chemical reduction method.
J. Shakya   +3 more
semanticscholar   +1 more source

Level density of degenerate Fermi systems

Nuclear Physics, 1958
Abstract Model independent expressions for the level density of systems of non-interacting Fermions are given in a form that is suitable for treating degenerate systems. No formal distinction is made between discrete and continuous distribution of the single Fermion states.
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Atomic Energy Levels for the Thomas-Fermi and Thomas-Fermi-Dirac Potential

Physical Review, 1955
The eigenvalues of the Schr\"odinger equation have been obtained for the Thomas-Fermi and Thomas-Fermi-Dirac atomic potentials. Electron self-interactions were taken into account by modifying the potentials to give asymptotically the field of a unit charge.
openaire   +2 more sources

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