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All‐Heat Control of Magnetization Dynamics on Van der Waals Magnets
Advanced Materials, EarlyView.Heat dissipation in nanomagnetic devices mediated by femtosecond laser excitation constitutes one of the pressing challenges toward energy‐efficient information communication technologies. Here it is shown that heat and magnetization play together to determine the ultrafast spin dynamics of van der Waals magnets across any substrates and magnet ...
Sumit Haldar +3 more
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Applied Physics Letters, 1983
The conventional concept that there is a so-called Fermi level for electronic states in solution which can be identified with the reversible potential on the vacuum scale of a redox couple present in solution (and in equilibrium with an electrode therein) is not valid. The inner potential of the solution phase should be added to the redox potential (on
John O’M. Bockris, Shahed U. M. Khan
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The conventional concept that there is a so-called Fermi level for electronic states in solution which can be identified with the reversible potential on the vacuum scale of a redox couple present in solution (and in equilibrium with an electrode therein) is not valid. The inner potential of the solution phase should be added to the redox potential (on
John O’M. Bockris, Shahed U. M. Khan
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Fermi-level pinning at heterojunctions
Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, 1983We have extended our calculations for defect levels at semiconductor free surfaces to ideal semiconductor heterojunctions. We find that the Fermi-energy pinning observed for deposition of Ge and Si (as well as metals and oxygen) on GaAs(110) surfaces is explained very satisfactorily by free-surface antisite defect levels, but cannot be explained, even ...
John D. Dow +2 more
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Reversibility of Fermi level pinning
Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, 1988By depositing monolayer coverage of Ag on freshly cleaved, clean GaAs(110) surface, the surface Fermi level was found to pin at 0.45±0.05 eV above valence band maximum (VBM) for p-GaAs and 0.65±0.05 eV above VBM for n-GaAs, due to the formation of midgap electronic states.
I. Lindau +4 more
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A Note on Fermi Levels, Quasi-Fermi Levels, and Terminal Voltages in Semiconductor Devices
American Journal of Physics, 1963The concepts of electrostatic and electrochemical potentials as they bear on the volt-ampere characteristics of semiconductor devices are reviewed. The meaning of voltage drops across portions of semiconductor materials containing excess carriers is clarified.
D.L. Scharfetter +2 more
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Unpinning of Fermi level in nanocrystalline semiconductors
Applied Physics Letters, 2004A theoretical model has been developed to interpret the size dependent behavior of nanostructured metal-oxide semiconductors. It is based on the determination of the surface-state density, which pins the Fermi level of the semiconductor, thus removing the linear relationship between the work function and the Schottky barrier.
MALAGU', Cesare +3 more
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Journal of Physics: Condensed Matter, 2002
Diamond is a wide-band-gap material with large donor and acceptor ionization energies. In principle, at room temperature and below, the Fermi energy is pinned close to the donor or acceptor level, depending on which is present in the higher concentration.
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Diamond is a wide-band-gap material with large donor and acceptor ionization energies. In principle, at room temperature and below, the Fermi energy is pinned close to the donor or acceptor level, depending on which is present in the higher concentration.
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Optical transition to the Fermi level in NaxWO3
Physics Letters A, 1972Abstract Evidence is given of an optical transition to the Fermi level in metallic Na x WO 3 . The transition energy depends on the stoichiometric index x . The data allow to evaluate an average m ∗ .
A. Stella, A. Gustinetti, G. Giuliani
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The Fermi level and the redox potential
The Journal of Physical Chemistry, 1985Discussion didactique sur le niveau de Fermi en tant que potentiel electrochimique de l'electron dans des solides et dans des solutions liquides non metalliques.
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American Journal of Physics, 1961
A simple apparatus demonstrates the dependence of Fermi level upon the temperature and impurity content of a semiconductor. Electrons are represented by ball bearings and states are represented by holes in a plastic sheet. A Fermi probability function template is positioned in energy to accommodate precisely the number of “electrons” originally put ...
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A simple apparatus demonstrates the dependence of Fermi level upon the temperature and impurity content of a semiconductor. Electrons are represented by ball bearings and states are represented by holes in a plastic sheet. A Fermi probability function template is positioned in energy to accommodate precisely the number of “electrons” originally put ...
openaire +2 more sources