Results 271 to 280 of about 35,608 (288)

An apparent paradox in the thermodynamics of Fermi levels

Solid State Communications, 1985
Abstract We consider what happens when two metal plates having different work functions approach one another. If they are connected by a wire the plates will do work and build up an electric field in the space between them. The system does work even though the electron Fermi level is the same throughout.
Albert Rose, Richard Williams
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Fermi level stabilization at semiconductor surfaces

Surface Science, 1965
Abstract Photoelectric measurements have been carried out on silicon single crystals covered with small amounts of indium. It turns out that for low stages of coverage the only effect of the indium on the photoemission is a parallel shift of the whole spectral yield curve to lower energy.
J.J. Scheer, J. van Laar
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Determination of localized level energies by a statistics of the fermi-level

Applied Physics, 1977
For a very large number of samples of a semiconducting material, which is not intentionally doped, the Fermi-level coincides approximately with the respective energy levels of the accidential impurities and defects. Based on this fact, the energies of localized levels were determined from a statistic of the Fermi-level in CdSe platelets. These energies
F. Stöckmann, P. Belche, H. J. Hoffmann
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Magnetic Circular Dichroism near the Fermi Level

Physical Review Letters, 2006
We report the observation of enhanced magnetic circular dichroism (MCD) near the Fermi level using visible and ultraviolet lasers. More than 10% MCD asymmetry is achieved for a perpendicularly magnetized 12 ML (monolayer) Ni film on Cu(001). By changing the work function with the aid of cesium adsorption, the MCD asymmetry of is found to be enhanced ...
Takeshi Nakagawa, Toshihiko Yokoyama
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The Fermi Level in Germanium at High Temperatures

Proceedings of the Physical Society, 1958
Some results are given of calculations on the Fermi level in doped and intrinsic germanium from room temperature to the melting point (~1200 deg K). Results of calculations are graphically summarized.
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Determination of the Fermi Level, Fermi Distribution and Activity Coefficient for n‐SiC(P) [PDF]

Crystal Research and Technology, 1982
AbstractA calculation was made of the Fermi level value and Fermi distribution at different temperatures, concentrations of impurities and degrees of compensation in acceptive silicon carbide, doped by aluminium. The dependence of the activity coefficient of aluminium in the silicon carbide on the concentration and the temperature was established.
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Level density of degenerate Fermi systems

Nuclear Physics, 1958
Abstract Model independent expressions for the level density of systems of non-interacting Fermions are given in a form that is suitable for treating degenerate systems. No formal distinction is made between discrete and continuous distribution of the single Fermion states.
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Atomic Energy Levels for the Thomas-Fermi and Thomas-Fermi-Dirac Potential

Physical Review, 1955
The eigenvalues of the Schr\"odinger equation have been obtained for the Thomas-Fermi and Thomas-Fermi-Dirac atomic potentials. Electron self-interactions were taken into account by modifying the potentials to give asymptotically the field of a unit charge.
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Fermi Level in Disordered Alloys

Physical Review B, 1972
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Quantum oscillations in the Fermi level of lead

Physics Letters, 1965
A.D. Caplin, D. Shoenberg
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