Results 301 to 310 of about 15,148,093 (364)
Some of the next articles are maybe not open access.
Fermi‐Level Pinning‐Free WSe2 Transistors via 2D Van der Waals Metal Contacts and Their Circuits
Advances in Materials, 2022Precise control over the polarity of transistors is a key necessity for the construction of complementary metal–oxide–semiconductor circuits. However, the polarity control of 2D transistors remains a challenge because of the lack of a high‐work‐function ...
Jisu Jang +9 more
semanticscholar +1 more source
Polarimetric Image Sensor and Fermi Level Shifting Induced Multichannel Transition Based on 2D PdPS
Advances in Materials, 20212D materials have been attracting high interest in recent years due to their low structural symmetry, excellent photoresponse, and high air stability.
Xingang Wang +9 more
semanticscholar +1 more source
Advanced Electronic Materials, 2021
Effective control of 2D transistors polarity is a critical challenge in the process for integrating 2D materials into semiconductor devices. Herein, a doping‐free approach for developing tungsten diselenide (WSe2) logic devices by utilizing the van der ...
Tien Dat Ngo +9 more
semanticscholar +1 more source
Effective control of 2D transistors polarity is a critical challenge in the process for integrating 2D materials into semiconductor devices. Herein, a doping‐free approach for developing tungsten diselenide (WSe2) logic devices by utilizing the van der ...
Tien Dat Ngo +9 more
semanticscholar +1 more source
Applied Physics Letters, 1983
The conventional concept that there is a so-called Fermi level for electronic states in solution which can be identified with the reversible potential on the vacuum scale of a redox couple present in solution (and in equilibrium with an electrode therein) is not valid. The inner potential of the solution phase should be added to the redox potential (on
John O’M. Bockris, Shahed U. M. Khan
openaire +2 more sources
The conventional concept that there is a so-called Fermi level for electronic states in solution which can be identified with the reversible potential on the vacuum scale of a redox couple present in solution (and in equilibrium with an electrode therein) is not valid. The inner potential of the solution phase should be added to the redox potential (on
John O’M. Bockris, Shahed U. M. Khan
openaire +2 more sources
Field Guide to Optoelectronics and Photonics, 2021
Juan Hernández-Cordero +1 more
openaire +2 more sources
Juan Hernández-Cordero +1 more
openaire +2 more sources
Fermi-level pinning at heterojunctions
Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, 1983We have extended our calculations for defect levels at semiconductor free surfaces to ideal semiconductor heterojunctions. We find that the Fermi-energy pinning observed for deposition of Ge and Si (as well as metals and oxygen) on GaAs(110) surfaces is explained very satisfactorily by free-surface antisite defect levels, but cannot be explained, even ...
John D. Dow +2 more
openaire +2 more sources
Reversibility of Fermi level pinning
Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, 1988By depositing monolayer coverage of Ag on freshly cleaved, clean GaAs(110) surface, the surface Fermi level was found to pin at 0.45±0.05 eV above valence band maximum (VBM) for p-GaAs and 0.65±0.05 eV above VBM for n-GaAs, due to the formation of midgap electronic states.
I. Lindau +4 more
openaire +2 more sources
A Note on Fermi Levels, Quasi-Fermi Levels, and Terminal Voltages in Semiconductor Devices
American Journal of Physics, 1963The concepts of electrostatic and electrochemical potentials as they bear on the volt-ampere characteristics of semiconductor devices are reviewed. The meaning of voltage drops across portions of semiconductor materials containing excess carriers is clarified.
D.L. Scharfetter +2 more
openaire +2 more sources
Unpinning of Fermi level in nanocrystalline semiconductors
Applied Physics Letters, 2004A theoretical model has been developed to interpret the size dependent behavior of nanostructured metal-oxide semiconductors. It is based on the determination of the surface-state density, which pins the Fermi level of the semiconductor, thus removing the linear relationship between the work function and the Schottky barrier.
MALAGU', Cesare +3 more
openaire +3 more sources
Catalysis from A to Z, 2020
The Fermi Level is the energy level which is occupied by the electron orbital at temperature equals 0 K. The level of occupancy determines the conductivity of different materials.
R. Imbihl
semanticscholar +1 more source
The Fermi Level is the energy level which is occupied by the electron orbital at temperature equals 0 K. The level of occupancy determines the conductivity of different materials.
R. Imbihl
semanticscholar +1 more source