Results 301 to 310 of about 326,700 (334)

Determination of localized level energies by a statistics of the fermi-level

Applied Physics, 1977
For a very large number of samples of a semiconducting material, which is not intentionally doped, the Fermi-level coincides approximately with the respective energy levels of the accidential impurities and defects. Based on this fact, the energies of localized levels were determined from a statistic of the Fermi-level in CdSe platelets. These energies
F. Stöckmann, P. Belche, H. J. Hoffmann
openaire   +2 more sources

Magnetic Circular Dichroism near the Fermi Level

Physical Review Letters, 2006
We report the observation of enhanced magnetic circular dichroism (MCD) near the Fermi level using visible and ultraviolet lasers. More than 10% MCD asymmetry is achieved for a perpendicularly magnetized 12 ML (monolayer) Ni film on Cu(001). By changing the work function with the aid of cesium adsorption, the MCD asymmetry of is found to be enhanced ...
Takeshi Nakagawa, Toshihiko Yokoyama
openaire   +3 more sources

Determination of the Fermi Level, Fermi Distribution and Activity Coefficient for n‐SiC(P) [PDF]

Crystal Research and Technology, 1982
AbstractA calculation was made of the Fermi level value and Fermi distribution at different temperatures, concentrations of impurities and degrees of compensation in acceptive silicon carbide, doped by aluminium. The dependence of the activity coefficient of aluminium in the silicon carbide on the concentration and the temperature was established.
openaire   +1 more source

The Fermi Level in Germanium at High Temperatures

Proceedings of the Physical Society, 1958
Some results are given of calculations on the Fermi level in doped and intrinsic germanium from room temperature to the melting point (~1200 deg K). Results of calculations are graphically summarized.
openaire   +2 more sources

Electron quasi-Fermi level-Fermi level splitting at the base-emitter junction of AlGaAs/GaAs HBT's

IEEE Transactions on Electron Devices, 1993
The amount of electron quasi-Fermi level splitting in the emitter-base junction of AlGaAs/GaAs single- and double-heterojunction bipolar transistors is computed. The degree of splitting is found to be generally small, and less pronounced in double-heterojunction devices.
D.L. Pulfrey, S. Searles
openaire   +2 more sources

Atomic Energy Levels for the Thomas-Fermi and Thomas-Fermi-Dirac Potential

Physical Review, 1955
The eigenvalues of the Schr\"odinger equation have been obtained for the Thomas-Fermi and Thomas-Fermi-Dirac atomic potentials. Electron self-interactions were taken into account by modifying the potentials to give asymptotically the field of a unit charge.
openaire   +2 more sources

Sachdev-Ye-Kitaev models and beyond: Window into non-Fermi liquids

Reviews of Modern Physics, 2022
Debanjan Chowdhury, Antoine Georges, Olivier Parcollet   +2 more
exaly  

Fermi Level Pinning Dependent 2D Semiconductor Devices: Challenges and Prospects

Advanced Materials, 2022
Min Sup Choi, Won Jong Yoo
exaly  

Fermi Level in Disordered Alloys

Physical Review B, 1972
openaire   +2 more sources

Minimizing heat generation in quantum dot light-emitting diodes by increasing quasi-Fermi-level splitting

Nature Nanotechnology, 2023
Huaibin Shen, Yang Song, Lin Song Li
exaly