Results 331 to 340 of about 15,148,093 (364)
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Fermi level stabilization at semiconductor surfaces
Surface Science, 1965Abstract Photoelectric measurements have been carried out on silicon single crystals covered with small amounts of indium. It turns out that for low stages of coverage the only effect of the indium on the photoemission is a parallel shift of the whole spectral yield curve to lower energy.
J.J. Scheer, J. van Laar
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Magnetic Circular Dichroism near the Fermi Level
Physical Review Letters, 2006We report the observation of enhanced magnetic circular dichroism (MCD) near the Fermi level using visible and ultraviolet lasers. More than 10% MCD asymmetry is achieved for a perpendicularly magnetized 12 ML (monolayer) Ni film on Cu(001). By changing the work function with the aid of cesium adsorption, the MCD asymmetry of is found to be enhanced ...
Takeshi Nakagawa, Toshihiko Yokoyama
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Fermi Level Manipulation through Native Doping in the Topological Insulator Bi2Se3.
ACS Nano, 2018The topologically protected surface states of three-dimensional (3D) topological insulators have the potential to be transformative for high-performance logic and memory devices by exploiting their specific properties such as spin-polarized current ...
L. Walsh +17 more
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Determination of the Fermi Level, Fermi Distribution and Activity Coefficient for n‐SiC(P) [PDF]
Crystal Research and Technology, 1982 AbstractA calculation was made of the Fermi level value and Fermi distribution at different temperatures, concentrations of impurities and degrees of compensation in acceptive silicon carbide, doped by aluminium. The dependence of the activity coefficient of aluminium in the silicon carbide on the concentration and the temperature was established.
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The Fermi Level in Germanium at High Temperatures
Proceedings of the Physical Society, 1958Some results are given of calculations on the Fermi level in doped and intrinsic germanium from room temperature to the melting point (~1200 deg K). Results of calculations are graphically summarized.
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Electron quasi-Fermi level-Fermi level splitting at the base-emitter junction of AlGaAs/GaAs HBT's
IEEE Transactions on Electron Devices, 1993The amount of electron quasi-Fermi level splitting in the emitter-base junction of AlGaAs/GaAs single- and double-heterojunction bipolar transistors is computed. The degree of splitting is found to be generally small, and less pronounced in double-heterojunction devices.
D.L. Pulfrey, S. Searles
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Sachdev-Ye-Kitaev models and beyond: Window into non-Fermi liquids
Reviews of Modern Physics, 2022Debanjan Chowdhury +2 more
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