Results 31 to 40 of about 15,196,329 (270)

Fermi Level Equilibration at the Metal-Molecule Interface in Plasmonic Systems. [PDF]

open access: yesNano letters (Print), 2021
We highlight a new metal-molecule charge transfer process by tuning the Fermi energy of plasmonic silver nanoparticles (AgNPs) in situ. The strong adsorption of halide ions upshifts the Fermi level of AgNPs by up to ∼0.3 eV in the order Cl- < Br- < I ...
A. Stefancu   +6 more
semanticscholar   +1 more source

Ferroelectrically modulate the Fermi level of graphene oxide to enhance SERS response

open access: yesOpto-Electronic Advances, 2023
Surface-enhanced Raman scattering (SERS) substrates based on chemical mechanism (CM) have received widespread attentions for the stable and repeatable signal output due to their excellent chemical stability, uniform molecular adsorption and controllable ...
Mingrui Shao   +9 more
semanticscholar   +1 more source

Minimizing heat generation in quantum dot light-emitting diodes by increasing quasi-Fermi-level splitting

open access: yesNature Nanotechnology, 2023
Minimizing heat accumulation is essential to prolonging the operational lifetime of quantum dot light-emitting diodes (QD-LEDs). Reducing heat generation at the source is the ideal solution, which requires high brightness and quantum efficiency at low ...
Yanyuan Gao   +13 more
semanticscholar   +1 more source

Fermi Level Pinning Dependent 2D Semiconductor Devices: Challenges and Prospects

open access: yesAdvances in Materials, 2021
Motivated by the high expectation for efficient electrostatic modulation of charge transport at very low voltages, atomically thin 2D materials with a range of bandgaps are investigated extensively for use in future semiconductor devices.
Xiaochi Liu   +4 more
semanticscholar   +1 more source

Work Function and Electron Affinity of Semiconductors: Doping Effect and Complication due to Fermi Level Pinning

open access: yesEnergy & Environmental Materials, 2021
Semiconductors are a major category of functional materials essential to various applications to sustain the modern society. Most applied materials or devices utilizing semiconductors are enabled by interfaces or junctions, such as solar cells ...
G. Shao
semanticscholar   +1 more source

Modeling of the properties of the semiconductor solid solution Lu1-xVxNiSb in the presence of magnetic ordering

open access: yesФізика і хімія твердого тіла, 2023
Modeling of the thermodynamic, structural, energetic and magnetic properties of the semiconductor solid solution Lu1-xVxNiSb was carried out under the condition of the presence of a magnetic moment on the V atoms and the occurrence of spontaneous ...
V.V. Romaka   +6 more
doaj   +1 more source

Band structure of organic-ion-intercalated (EMIM)$_x$FeSe superconductor [PDF]

open access: yesMaterials 15, 1856 (2022), 2022
The band structure and the Fermi surface of the recently discovered superconductor (EMIM)$_x$FeSe are studied within the density functional theory in the generalized gradient approximation. We show that the bands near the Fermi level are formed primarily by Fe-$d$ orbitals.
arxiv   +1 more source

Fermi Level Position at Semiconductor Surfaces [PDF]

open access: yesPhysical Review Letters, 1963
There have been several recent reports of barrier height studies on metal-semiconductor interfaces. Metals of widely different work functions evaporated onto Si and GaAs surfaces indicated that in each case the energy difference between the semiconductor conduction band edge and Fermi level at the interface,φ_(Bn), was essentially independent of the
Mead, C. A., Spitzer, W. G.
openaire   +4 more sources

Pinning of the Fermi Level in CuFeO2 by Polaron Formation Limiting the Photovoltage for Photochemical Water Splitting

open access: yesAdvanced Functional Materials, 2020
CuFeO2 is recognized as a potential photocathode for photo(electro)chemical water splitting. However, photocurrents with CuFeO2‐based systems are rather low so far.
Yannick Hermans   +6 more
semanticscholar   +1 more source

Mechanism of Fermi-level stabilization in semiconductors [PDF]

open access: yesPhysical Review B, 1988
A striking correlation between the Fermi level in heavily radiation damaged semiconductors and at metal-semiconductor interfaces is presented. The correlation provides critical evidence supporting the defect model for Schottky-barrier formation. The Fermi-level energy for both situations corresponds to the average energy of the ${\mathrm{sp}}^{3 ...
openaire   +4 more sources

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