Results 31 to 40 of about 326,700 (334)

Charge transport across metal/molecular (alkyl) monolayer-Si junctions is dominated by the LUMO level

, 2011
We compare the charge transport characteristics of heavy doped p- and n-Si-alkyl chain/Hg junctions. Photoelectron spectroscopy (UPS, IPES and XPS) results for the molecule-Si band alignment at equilibrium show the Fermi level to LUMO energy difference ...
Antoine Kahn, Ayelet Vilan, David Cahen, E. Rhoderick, Han Zuilhof, Hossam Haick, L. Esaki, Leeor Kronik, Lior Segev, Luc Scheres, Omer Yaffe, S. M. Sze, Sreenivasa Reddy Puniredd, Tal Ely, Yabing Qi   +14 more
core   +3 more sources

Transition from electron accumulation to depletion at InGaN surfaces [PDF]

, 2006
The composition dependence of the Fermi-level pinning at the oxidized (0001) surfaces of n-type InxGa1−xN films ...
Chalker, P. R., Considine, L., Jefferson, Paul Harvey, Joyce, T. B., Lu, H., McConville, C. F., Piper, L. F. J., Schaff, William Joseph, Veal, T. D.   +8 more
core   +1 more source

Experimental studies of a new thermoelectric material based on semiconductor solid solution Ti1-xAlxNiSn

Фізика і хімія твердого тіла
The structural, electrokinetic, and energetic properties of the Ti1-xAlxNiSn semiconductor solid solution, obtained by introducing of Al atoms into the structure of the TiNiSn half-Heusler phase by substituting Ti atoms in the crystallographic position ...
Yu. Stadnyk, V.A. Romaka, L. Romaka, A. Horyn, V. Pashkevych   +4 more
doaj   +1 more source

Electronic and optical behaviour of lanthanum doped CaTiO3 perovskite

Materials Research Express, 2020
To improve the efficiency of perovskite based solar cells, doping of heavier elements in Perovskite materials (ABX _3 ) can modulate its electronic and optical properties significantly.
Muhammad Rizwan, Zahid Usman, Muhammad Shakil, S S A Gillani, S Azeem, H B Jin, C B Cao, Rana Farhat Mehmood, Ghulam Nabi, Muhammad Adnan Asghar   +9 more
doaj   +1 more source

Quasiballistic correction to the density of states in three-dimensional metal

, 1999
We study the exchange correction to the density of states in the three-dimensional metal near the Fermi energy. In the ballistic limit, when the distance to the Fermi level exceeds the inverse transport relaxation time $1/\tau$, we find the correction ...
A. A. Koulakov, A.E. White, A.E. White, A.M. Rudin, G. Hertel, J.G. Massey, M. Lee, W.L. McMillan, Y. Imry   +8 more
core   +1 more source

Role of the van Hove Singularity in the Quantum Criticality of the Hubbard Model [PDF]

, 2011
A quantum critical point (QCP), separating the non-Fermi liquid region from the Fermi liquid, exists in the phase diagram of the 2D Hubbard model [Vidhyadhiraja et. al, Phys. Rev. Lett. 102, 206407 (2009)].
A. C. Hewson, D. Galanakis, F. Steglich, G. Wiedemann, J. Moreno, K. Mikelsons, K.-S. Chen, M. Jarrell, R. Kubo, S. Pathak, S.-Q. Su, S.-X. Yang   +11 more
core   +3 more sources

Study of adsorption states in ZnO–Ag gas-sensitive ceramics using the ECTV curves method

Технологія та конструювання в електронній апаратурі, 2013
The ZnO–Ag ceramic system as the material for semiconductor sensors of ethanol vapors was proposed quite a long time ago. The main goal of this work was to study surface electron states of this system and their relation with the electric properties of ...
A. Yu. Lyashkov
doaj   +1 more source

Fermi-level pinning and charge neutrality level in germanium

Applied Physics Letters, 2006
The Schottky barrier height in metal/Ge contacts shows weak dependence on the metal work function indicating strong Fermi-level pinning close to the Bardeen limit. The pinning factor S is about 0.05 and the charge neutrality level (CNL) is only about 0.09eV above the top of the valence band.
Dimoulas, A., Tsipas, P., Sotiropoulos, A., Evangelou, E. K.   +3 more
openaire   +3 more sources

Minimal electronic models for superconducting BiS$_2$ layers

, 2012
We construct minimal electronic models for a newly discovered superconductor LaO$_{1-x}$F$_x$BiS$_2$ ($T_c=$ 10.6K) possessing BiS$_2$ layers based on first principles band calculation.
Kuroki, Kazuhiko, Suzuki, Katsuhiro, Usui, Hidetomo   +2 more
core   +1 more source

Effects of Pressure on the Electronic Structures of LaOFeP

, 2013
We studied the electronic structures of LaOFeP under applied pressure using first-principles calculations. The electronic density of states at the Fermi level decreases continuously with increasing pressure.
Hu, Xiao, Yang, Yong
core   +1 more source