Results 31 to 40 of about 334,237 (330)
Mechanism of Fermi-level stabilization in semiconductors [PDF]
Physical Review B, 1988 A striking correlation between the Fermi level in heavily radiation damaged semiconductors and at metal-semiconductor interfaces is presented. The correlation provides critical evidence supporting the defect model for Schottky-barrier formation. The Fermi-level energy for both situations corresponds to the average energy of the ${\mathrm{sp}}^{3 ...
openaire +3 more sources
Фізика і хімія твердого тілаThe structural, electrokinetic, and energetic properties of the Ti1-xAlxNiSn semiconductor solid solution, obtained by introducing of Al atoms into the structure of the TiNiSn half-Heusler phase by substituting Ti atoms in the crystallographic position ...
Yu. Stadnyk +4 more
doaj +1 more source
Quasiballistic correction to the density of states in three-dimensional metal
, 1999 We study the exchange correction to the density of states in the three-dimensional metal near the Fermi energy. In the ballistic limit, when the distance to the Fermi level exceeds the inverse transport relaxation time $1/\tau$, we find the correction ...
A. A. Koulakov +8 more
core +1 more source
Coulomb Drag Between Parallel Ballistic Quantum Wires
, 1999 The Coulomb drag between parallel, {\it ballistic} quantum wires is studied theoretically in the presence of a perpendicular magnetic field B. The transresistance R_D shows peaks as a function of the Fermi level and splitting energy between the 1D ...
A. Laikhtman +22 more
core +1 more source
Electronic and optical behaviour of lanthanum doped CaTiO3 perovskite
Materials Research Express, 2020 To improve the efficiency of perovskite based solar cells, doping of heavier elements in Perovskite materials (ABX _3 ) can modulate its electronic and optical properties significantly.
Muhammad Rizwan +9 more
doaj +1 more source
Minimal electronic models for superconducting BiS$_2$ layers
, 2012 We construct minimal electronic models for a newly discovered superconductor LaO$_{1-x}$F$_x$BiS$_2$ ($T_c=$ 10.6K) possessing BiS$_2$ layers based on first principles band calculation.
Kuroki, Kazuhiko +2 more
core +1 more source
Study of adsorption states in ZnO–Ag gas-sensitive ceramics using the ECTV curves method
Технологія та конструювання в електронній апаратурі, 2013 The ZnO–Ag ceramic system as the material for semiconductor sensors of ethanol vapors was proposed quite a long time ago. The main goal of this work was to study surface electron states of this system and their relation with the electric properties of ...
A. Yu. Lyashkov
doaj +1 more source
Graphene-based tunable linear and linear-to-circular polarization converters in the THz band
Results in Physics, 2022 A switchable and tunable reflective terahertz (THz) polarization converter based on graphene metamaterial is designed and analyzed. By changing the Fermi energy level of graphene, the converter can achieve broadband linear polarization conversion (LPC ...
Xueguang Yuan +5 more
doaj +1 more source
, 2001 Silver films were deposited at room temperature onto H-passivated Si(111) surfaces. Their electronic properties have been analyzed by angle-resolved photoelectron spectroscopy.
A. Arranz +59 more
core +3 more sources
Anomalous self-energy and Fermi surface quasi-splitting in the vicinity of a ferromagnetic instability [PDF]
, 2004 We discuss the low-temperature behavior of the electronic self-energy in the vicinity of a ferromagnetic instability in two dimensions within the two-particle self-consistent approximation, functional renormalization group and Ward-identity approaches ...
A. A. Abrikosov +17 more
core +1 more source