Results 31 to 40 of about 15,030,259 (251)
Фізика і хімія твердого тіла, 2023 Modeling of the thermodynamic, structural, energetic and magnetic properties of the semiconductor solid solution Lu1-xVxNiSb was carried out under the condition of the presence of a magnetic moment on the V atoms and the occurrence of spontaneous ...
V.V. Romaka +6 more
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Фізика і хімія твердого тіла, 2020 Peculiarities of the structural, electrokinetic, energetic, and magnetic characteristics of Er1-xZrxNiSb semiconductive solid solution, х=0–0.10, were studied.
V.A. Romaka +6 more
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Fermi Level Position at Semiconductor Surfaces [PDF]
Physical Review Letters, 1963 There have been several recent reports of barrier height studies on metal-semiconductor interfaces. Metals of widely different work functions evaporated onto Si and GaAs surfaces indicated that in each case the energy difference between the semiconductor conduction band edge and Fermi level at the interface,φ_(Bn), was essentially independent of the
Mead, C. A., Spitzer, W. G.
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Luttinger theorem for the strongly correlated Fermi liquid of composite fermions [PDF]
, 2015 While an ordinary Fermi sea is perturbatively robust to interactions, the paradigmatic composite-fermion (CF) Fermi sea arises as a non-perturbative consequence of emergent gauge fields in a system where there was no Fermi sea to begin with. A mean-field
Balram, Ajit C. +2 more
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On the Reconstructed Fermi Surface in the Underdoped Cuprates [PDF]
, 2010 The Fermi surface topologies of underdoped samples the high-Tc superconductor Bi2212 have been measured with angle resolved photoemission. By examining thermally excited states above the Fermi level, we show that the Fermi surfaces in the pseudogap phase
Claus, H. +7 more
core +3 more sources
Mechanism of Fermi-level stabilization in semiconductors [PDF]
Physical Review B, 1988 A striking correlation between the Fermi level in heavily radiation damaged semiconductors and at metal-semiconductor interfaces is presented. The correlation provides critical evidence supporting the defect model for Schottky-barrier formation. The Fermi-level energy for both situations corresponds to the average energy of the ${\mathrm{sp}}^{3 ...
openaire +4 more sources
Advanced Functional Materials, 2020 CuFeO2 is recognized as a potential photocathode for photo(electro)chemical water splitting. However, photocurrents with CuFeO2‐based systems are rather low so far.
Yannick Hermans +6 more
semanticscholar +1 more source
Fermi Level Pinning at Electrical Metal Contacts of Monolayer Molybdenum Dichalcogenides.
ACS Nano, 2017 Electrical metal contacts to two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDCs) are found to be the key bottleneck to the realization of high device performance due to strong Fermi level pinning and high contact resistances (Rc).
Changsik Kim +9 more
semanticscholar +1 more source
Van der Waals metal-semiconductor junction: Weak Fermi level pinning enables effective tuning of Schottky barrier [PDF]
Science Advances, 2016 The Schottky barrier for carrier injection into 2D semiconductors can be effectively tuned by using 2D metals. Two-dimensional (2D) semiconductors have shown great potential for electronic and optoelectronic applications.
Yuanyue Liu, P. Stradins, Suhuai Wei
semanticscholar +1 more source
Electronic and optical behaviour of lanthanum doped CaTiO3 perovskite
Materials Research Express, 2020 To improve the efficiency of perovskite based solar cells, doping of heavier elements in Perovskite materials (ABX _3 ) can modulate its electronic and optical properties significantly.
Muhammad Rizwan +9 more
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