Results 31 to 40 of about 15,148,093 (364)
Фізика і хімія твердого тіла, 2020 Peculiarities of the structural, electrokinetic, energetic, and magnetic characteristics of Er1-xZrxNiSb semiconductive solid solution, х=0–0.10, were studied.
V.A. Romaka +6 more
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Фізика і хімія твердого тіла, 2023 Modeling of the thermodynamic, structural, energetic and magnetic properties of the semiconductor solid solution Lu1-xVxNiSb was carried out under the condition of the presence of a magnetic moment on the V atoms and the occurrence of spontaneous ...
V.V. Romaka +6 more
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Фізика і хімія твердого тіла, 2022 The KKR (AkaiKKR software package) and FLAPW (Elk software package) methods were used to model the structural, thermodynamic, energetic, and electrokinetic characteristics of the Lu1-xZrxNiSb semiconductor solid solution.
V.A. Romaka +6 more
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Фізика і хімія твердого тіла, 2022 The effect of doping of half-Heusler phase p-LuNiSb (MgAgAs structure type) by Zr atoms on the structural, kinetic, energetic and magnetic characteristics of the semiconductor solid solution Lu1-xZrxNiSb was studied in the ranges: T = 80–400 K, x = 0–0 ...
V.A. Romaka +6 more
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Investigation of Ti1-xMoxCoSb Semiconducting Solid Solution
Фізика і хімія твердого тіла, 2020 The effect of doping of the TiCoSb compound (MgAgAs structure type) by Mo atoms on the features of the structural characteristics and behavior of the electrokinetic, energetic and magnetic properties of the Ti1-xMoxCoSb semiconducting solid solution (х =
Yu. Stadnyk +6 more
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Fermi Level Position at Semiconductor Surfaces [PDF]
Physical Review Letters, 1963 There have been several recent reports of barrier height studies on metal-semiconductor interfaces. Metals of widely different work functions evaporated onto Si and GaAs surfaces indicated that in each case the energy difference between the semiconductor conduction band edge and Fermi level at the interface,φ_(Bn), was essentially independent of the
Mead, C. A., Spitzer, W. G.
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Mechanism of Fermi-level stabilization in semiconductors [PDF]
Physical Review B, 1988 A striking correlation between the Fermi level in heavily radiation damaged semiconductors and at metal-semiconductor interfaces is presented. The correlation provides critical evidence supporting the defect model for Schottky-barrier formation. The Fermi-level energy for both situations corresponds to the average energy of the ${\mathrm{sp}}^{3 ...
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Van der Waals metal-semiconductor junction: Weak Fermi level pinning enables effective tuning of Schottky barrier [PDF]
Science Advances, 2016 The Schottky barrier for carrier injection into 2D semiconductors can be effectively tuned by using 2D metals. Two-dimensional (2D) semiconductors have shown great potential for electronic and optoelectronic applications.
Yuanyue Liu, P. Stradins, Suhuai Wei
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Sixfold fermion near the Fermi level in cubic PtBi2
SciPost Physics, 2021 We show that the cubic compound PtBi2, is a topological semimetal hosting a sixfold band touching point in close proximity to the Fermi level. Using angle-resolved photoemission spectroscopy, we map the bandstructure of the system, which is in good ...
S. Thirupathaiah, Y. S. Kushnirenk, K. Koepernik, B. R. Piening, B. Buechner, S. Aswartham, J. van den Brink, S. V. Borisenko, I. C. Fulga
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Advanced Functional Materials, 2020 CuFeO2 is recognized as a potential photocathode for photo(electro)chemical water splitting. However, photocurrents with CuFeO2‐based systems are rather low so far.
Yannick Hermans +6 more
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