Results 51 to 60 of about 15,030,259 (251)
The structural, electrokinetic, and energetic properties of the Ti1-xAlxNiSn semiconductor solid solution, obtained by introducing of Al atoms into the structure of the TiNiSn half-Heusler phase by substituting Ti atoms in the crystallographic position ...
Yu. Stadnyk+4 more
doaj +1 more source
Nernst effect and dimensionality in the quantum limit
Nernst effect, the transverse voltage generated by a longitudinal thermal gradient in presence of magnetic field has recently emerged as a very sensitive, yet poorly understood, probe of electron organization in solids. Here we report on an experiment on
Behnia, Kamran+4 more
core +1 more source
Today's perovskite solar cells (PSCs) are limited mainly by their open‐circuit voltage (VOC) due to nonradiative recombination. Therefore, a comprehensive understanding of the relevant recombination pathways is needed.
P. Caprioglio+6 more
semanticscholar +1 more source
We compare the charge transport characteristics of heavy doped p- and n-Si-alkyl chain/Hg junctions. Photoelectron spectroscopy (UPS, IPES and XPS) results for the molecule-Si band alignment at equilibrium show the Fermi level to LUMO energy difference ...
Antoine Kahn+14 more
core +3 more sources
Magnetotransport of dirty-limit van Hove singularity quasiparticles
Strongly correlated materials can exhibit deviations from Fermi-liquid behavior partly due to anomalies in the density of states at the Fermi level, such as van Hove singularities.
Yang Xu+15 more
doaj +1 more source
Atomic Fermi-Bose mixtures in inhomogeneous and random lattices: From Fermi glass to quantum spin glass and quantum percolation [PDF]
We investigate atomic Fermi-Bose mixtures in inhomogeneous and random optical lattices in the limit of strong atom-atom interactions. We derive the effective Hamiltonian describing the dynamics of the system and discuss its low temperature physics.
American Physical Society+5 more
core +4 more sources
Fermi-level pinning and charge neutrality level in germanium
The Schottky barrier height in metal/Ge contacts shows weak dependence on the metal work function indicating strong Fermi-level pinning close to the Bardeen limit. The pinning factor S is about 0.05 and the charge neutrality level (CNL) is only about 0.09eV above the top of the valence band.
Dimoulas, A.+3 more
openaire +3 more sources
Although great achievements have been obtained in metasurfaces so far, the functionalities of these devices are almost static. The dynamically adjustable devices are far less explored.
Xiongjun Shang+6 more
doaj +1 more source
Coulomb Drag Between Parallel Ballistic Quantum Wires
The Coulomb drag between parallel, {\it ballistic} quantum wires is studied theoretically in the presence of a perpendicular magnetic field B. The transresistance R_D shows peaks as a function of the Fermi level and splitting energy between the 1D ...
A. Laikhtman+22 more
core +1 more source
In this paper, a switchable and dual-tunable terahertz absorber based on patterned graphene and vanadium dioxide is proposed and analyzed. By controlling the Fermi level of graphene and the temperature of vanadium dioxide, the device’s function can be ...
Hongyao Liu+6 more
doaj +1 more source