Results 61 to 70 of about 15,148,093 (364)

Switchable and Dual-Tunable Multilayered Terahertz Absorber Based on Patterned Graphene and Vanadium Dioxide

open access: yesMicromachines, 2021
In this paper, a switchable and dual-tunable terahertz absorber based on patterned graphene and vanadium dioxide is proposed and analyzed. By controlling the Fermi level of graphene and the temperature of vanadium dioxide, the device’s function can be ...
Hongyao Liu   +6 more
doaj   +1 more source

Fermi Level Engineering for Large Permittivity in BaTiO3-Based Multilayers

open access: yesSurfaces, 2020
Multilayered doped BaTiO3 thin films have been fabricated by physical vapor deposition (PVD) on low-cost polycrystalline substrates with the aim to improve dielectric properties by controlling point charge defects at the interfaces.
Christopher Castro Chavarría   +4 more
doaj   +1 more source

Graphene-Assisted Electromagnetically Induced Transparency-like Terahertz Metabiosensor for Ultra-Sensitive Detection of Ovalbumin

open access: yesPhotonics, 2023
Terahertz (THz) metamaterial (MM) biosensors are a potential method of biomolecule detection. However, there have been few reports on the detection of trace proteins. In this study, we designed a novel THz biosensor consisting of graphene, polyimide (PI),
Ruochen Xu   +9 more
doaj   +1 more source

ErMn6Sn6: A Promising Kagome Antiferromagnetic Candidate for Room‐Temperature Nernst Effect‐Based Thermoelectrics

open access: yesAdvanced Functional Materials, EarlyView.
This work investigates the Nernst effect in the Kagome magnet ErMn6Sn6 which exhibits both topological and anomalous Nernst effects with the anomalous Nernst coefficient reaching 1.71 µV K⁻¹ at 300 K. This value surpasses that of most canted antiferromagnetic materials, making ErMn6Sn6 a promising candidate for advancing thermoelectric devices based on
Olajumoke Oluwatobiloba Emmanuel   +2 more
wiley   +1 more source

Lifetime, quasi-Fermi level splitting and doping concentration of Cu-rich CuInS2 absorbers

open access: yesMaterials Research Express, 2021
Cu(In,Ga)S2–based solar cells have been shown by Hiroi et al (Hiroi et al 2015 IEEE Journal of Photovoltaics 6 309–312) to achieve higher efficiencies with absorbers processed at high deposition temperatures.
Damilola Adeleye   +3 more
doaj   +1 more source

Quantum interference probed by the thermovoltage in Sb-doped Bi2Se3 nanowires

open access: yesiScience, 2023
Summary: The magnetic-flux-dependent dispersions of sub-bands in topologically protected surface states of a topological insulator nanowire manifest as Aharonov–Bohm oscillations (ABOs) observed in conductance measurements, reflecting the Berry’s phase ...
Duhyuk Kwon   +5 more
doaj   +1 more source

Electronic properties and Fermi surface of Ag(111) films deposited onto H-passivated Si(111)-(1x1) surfaces

open access: yes, 2001
Silver films were deposited at room temperature onto H-passivated Si(111) surfaces. Their electronic properties have been analyzed by angle-resolved photoelectron spectroscopy.
A. Arranz   +59 more
core   +3 more sources

Enhanced Photoresponsivity of a GaAs Nanowire Metal-Semiconductor-Metal Photodetector by Adjusting the Fermi Level.

open access: yesACS Applied Materials and Interfaces, 2019
Metal-semiconductor-metal (MSM)-structured GaAs-based nanowire photodetectors have been widely reported due to their promises as an alternative for high-performance devices.
Xue Chen   +10 more
semanticscholar   +1 more source

Off‐Stoichiometry Engineering of the Electrical and Optical Properties of SrNbO3 Using Oxide Molecular Beam Epitaxy

open access: yesAdvanced Functional Materials, EarlyView.
The plasma edge of transparent conducting oxide SrNbO3 shifts from ∼2 eV in the visible range to 1.37 eV in the near‐infrared region by off‐stoichiometry using the vacancy sites as quasi‐substitutional virtual elements. This work advances the stoichiometry engineering of perovskite oxides using oxide molecular beam epitaxy, allowing synthesis beyond ...
Jasnamol Palakkal   +11 more
wiley   +1 more source

The influence of heavy doping of TiCoSb intermetallic semiconductor with Cr atoms on structural, kinetic and energetic properties

open access: yesФізика і хімія твердого тіла
The structural, electrokinetic, and energetic properties of the TiСо1-xCrxSb semiconductor obtained by doping TiCoSb with Cr atoms introduced into the structure by substituting Co atoms in the crystallographic position 4c were studied.
Yu. Stadnyk   +6 more
doaj   +1 more source

Home - About - Disclaimer - Privacy