Results 61 to 70 of about 15,030,259 (251)

Pairing in ultracold Fermi gases in the lowest Landau level [PDF]

open access: yesPhysical Review A, 2009
We study a rapidly rotating gas of unpolarized spin-1/2 ultracold fermions in the two-dimensional regime when all atoms reside in the lowest Landau level. Due to the presence of the spin degree of freedom both s-wave and p-wave interactions are allowed at ultralow temperatures.
Moller, G., Jolicoeur, Th., Regnault, N.
openaire   +4 more sources

Enhanced Photoresponsivity of a GaAs Nanowire Metal-Semiconductor-Metal Photodetector by Adjusting the Fermi Level.

open access: yesACS Applied Materials and Interfaces, 2019
Metal-semiconductor-metal (MSM)-structured GaAs-based nanowire photodetectors have been widely reported due to their promises as an alternative for high-performance devices.
Xue Chen   +10 more
semanticscholar   +1 more source

Fermi Level Engineering for Large Permittivity in BaTiO3-Based Multilayers

open access: yesSurfaces, 2020
Multilayered doped BaTiO3 thin films have been fabricated by physical vapor deposition (PVD) on low-cost polycrystalline substrates with the aim to improve dielectric properties by controlling point charge defects at the interfaces.
Christopher Castro Chavarría   +4 more
doaj   +1 more source

Lifetime, quasi-Fermi level splitting and doping concentration of Cu-rich CuInS2 absorbers

open access: yesMaterials Research Express, 2021
Cu(In,Ga)S2–based solar cells have been shown by Hiroi et al (Hiroi et al 2015 IEEE Journal of Photovoltaics 6 309–312) to achieve higher efficiencies with absorbers processed at high deposition temperatures.
Damilola Adeleye   +3 more
doaj   +1 more source

The influence of heavy doping of TiCoSb intermetallic semiconductor with Cr atoms on structural, kinetic and energetic properties

open access: yesФізика і хімія твердого тіла
The structural, electrokinetic, and energetic properties of the TiСо1-xCrxSb semiconductor obtained by doping TiCoSb with Cr atoms introduced into the structure by substituting Co atoms in the crystallographic position 4c were studied.
Yu. Stadnyk   +6 more
doaj   +1 more source

Graphene-Assisted Electromagnetically Induced Transparency-like Terahertz Metabiosensor for Ultra-Sensitive Detection of Ovalbumin

open access: yesPhotonics, 2023
Terahertz (THz) metamaterial (MM) biosensors are a potential method of biomolecule detection. However, there have been few reports on the detection of trace proteins. In this study, we designed a novel THz biosensor consisting of graphene, polyimide (PI),
Ruochen Xu   +9 more
doaj   +1 more source

Direct Measurement of the Fermi Energy in Graphene Using a Double Layer Structure

open access: yes, 2011
We describe a technique which allows a direct measurement of the relative Fermi energy in an electron system using a double layer structure, where graphene is one of the two layers.
Banerjee, S. K.   +7 more
core   +1 more source

Minimal electronic models for superconducting BiS$_2$ layers

open access: yes, 2012
We construct minimal electronic models for a newly discovered superconductor LaO$_{1-x}$F$_x$BiS$_2$ ($T_c=$ 10.6K) possessing BiS$_2$ layers based on first principles band calculation.
Kuroki, Kazuhiko   +2 more
core   +1 more source

Quasiballistic correction to the density of states in three-dimensional metal

open access: yes, 1999
We study the exchange correction to the density of states in the three-dimensional metal near the Fermi energy. In the ballistic limit, when the distance to the Fermi level exceeds the inverse transport relaxation time $1/\tau$, we find the correction ...
A. A. Koulakov   +8 more
core   +1 more source

Photovoltaic anomalous Hall effect in line-node semimetals [PDF]

open access: yes, 2016
We theoretically study the circularly polarized light-induced Floquet state in line-node semimetals with time-reversal symmetry and inversion symmetry.
69131   +7 more
core   +2 more sources

Home - About - Disclaimer - Privacy