Results 71 to 80 of about 15,030,259 (251)
Influence of Fermi Level Alignment with Tin Oxide on the Hysteresis of Perovskite Solar Cells.
ACS Applied Materials and Interfaces, 2018 We tune the Fermi level alignment between the SnO x electron transport layer (ETL) and Cs0.05(FA0.83MA0.17)0.95Pb(I0.83Br0.17)3 and highlight that this parameter is interlinked with current-voltage hysteresis in perovskite solar cells (PSCs). Furthermore,
Meltem F. Aygüler +9 more
semanticscholar +1 more source
, 2001 Silver films were deposited at room temperature onto H-passivated Si(111) surfaces. Their electronic properties have been analyzed by angle-resolved photoelectron spectroscopy.
A. Arranz +59 more
core +3 more sources
Improved Schottky junction analysis model
Functional DiamondThe intersection of the Fermi and impurity levels in the Schottky junction of boron-doped p-type diamond, a widely used p-type doping scheme for diamond, has been discovered. This indicates that the relationship between the ionization efficiency of boron
Kang Liu +5 more
doaj +1 more source
IEEE Photonics JournalTwo-dimensional photodetectors have an important property that can improve the optical effect by adjusting the Fermi level, and have outstanding development prospects in the field of visible-infrared photoelectric detection.
Jiapeng Zhen +6 more
doaj +1 more source
Terahertz Multiple Beam Steering Using Graphene Pancharatnam-Berry Metasurfaces
IEEE Photonics Journal, 2022 Pancharatnam-Berry metasurfaces have the great advantage of manipulating electromagnetic wave. At the same time, graphene has attracted much attention due to its unique electromagnetic responses in different Fermi levels.
Feng Zhao, Jiashuai Xu, Zhengyong Song
doaj +1 more source
, 2012 One of the most successful theories of a non-Fermi liquid metallic state is the composite Fermi liquid (CFL) theory of the half-filled Landau level. In this paper, we study continuous quantum phase transitions out of the CFL state and into a Landau Fermi
Barkeshli, Maissam, McGreevy, John
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Reduction of Schottky Barrier Height at Graphene/Germanium Interface with Surface Passivation
Applied Sciences, 2019 Fermi level pinning at metal/semiconductor interfaces forbids a total control over the Schottky barrier height. 2D materials may be an interesting route to circumvent this problem. As they weakly interact with their substrate through Van der Waals forces,
Jules Courtin +7 more
doaj +1 more source
Rich nature of Van Hove singularities in Kagome superconductor CsV3Sb5
Nature Communications, 2022 Predictions suggest enhanced correlation effect due to multiple van Hove singularities (VHS) in the vicinity of the Fermi level in the recently discovered AV3Sb5 kagome metals.
Yong Hu +11 more
doaj +1 more source
Fermi level pinning at the Ge(001) surface - A case for non-standard explanation
, 2015 To explore the origin of the Fermi level pinning in germanium we investigate the Ge(001) and Ge(001):H surfaces. The absence of relevant surface states in the case of Ge(001):H should unpin the surface Fermi level. This is not observed.
Godlewski, Szymon +6 more
core +1 more source
The Fermi surface of underdoped high-T_c superconducting cuprates
, 1997 The coexistence of $\pi$-flux state and d-wave RVB state is considered in this paper within the slave boson approach. A critical value of doping concentration $\delta_c$ is found, below which the coexisting $\pi$-flux and d-wave RVB state is favored in ...
Ding +8 more
core +1 more source