Results 71 to 80 of about 15,196,329 (270)
Direct Measurement of the Fermi Energy in Graphene Using a Double Layer Structure
, 2011 We describe a technique which allows a direct measurement of the relative Fermi energy in an electron system using a double layer structure, where graphene is one of the two layers.
Banerjee, S. K. +7 more
core +1 more source
Photonics, 2023 Terahertz (THz) metamaterial (MM) biosensors are a potential method of biomolecule detection. However, there have been few reports on the detection of trace proteins. In this study, we designed a novel THz biosensor consisting of graphene, polyimide (PI),
Ruochen Xu +9 more
doaj +1 more source
Emergence of quantum chaos in finite interacting Fermi systems [PDF]
, 1997 We study the level spacing statistics P(s) in many-body Fermi systems and determine a critical two-body interaction strength Uc at which a crossover from Poisson to Wigner-Dyson statistics takes place. Near the Fermi level the results allow to find a critical temperature Tch above which quantum chaos and thermalization set in.
arxiv +1 more source
Fermi Level Engineering for Large Permittivity in BaTiO3-Based Multilayers
Surfaces, 2020 Multilayered doped BaTiO3 thin films have been fabricated by physical vapor deposition (PVD) on low-cost polycrystalline substrates with the aim to improve dielectric properties by controlling point charge defects at the interfaces.
Christopher Castro Chavarría +4 more
doaj +1 more source
Spectrum of bound fermion states on vortices in $^3$He-B
, 2009 We study subgap spectra of fermions localized within vortex cores in $^3$He-B. We develop an analytical treatment of the low-energy states and consider the characteristic properties of fermion spectra for different types of vortices.
A. K. Geim +15 more
core +1 more source
Фізика і хімія твердого тілаThe structural, electrokinetic, and energetic properties of the TiСо1-xCrxSb semiconductor obtained by doping TiCoSb with Cr atoms introduced into the structure by substituting Co atoms in the crystallographic position 4c were studied.
Yu. Stadnyk +6 more
doaj +1 more source
Anomalous Fermi level behavior in GaMnAs at the onset of ferromagnetism
, 2013 We present the systematic study of the resonant tunneling spectroscopy on a series of ferromagnetic-semiconductor Ga1-xMnxAs with the Mn content x from ~0.01 to 3.2%. The Fermi level of Ga1-xMnxAs exists in the band gap in the whole x region.
Muneta, Iriya +3 more
core +1 more source
Lifetime, quasi-Fermi level splitting and doping concentration of Cu-rich CuInS2 absorbers
Materials Research Express, 2021 Cu(In,Ga)S2–based solar cells have been shown by Hiroi et al (Hiroi et al 2015 IEEE Journal of Photovoltaics 6 309–312) to achieve higher efficiencies with absorbers processed at high deposition temperatures.
Damilola Adeleye +3 more
doaj +1 more source
Minimal electronic models for superconducting BiS$_2$ layers
, 2012 We construct minimal electronic models for a newly discovered superconductor LaO$_{1-x}$F$_x$BiS$_2$ ($T_c=$ 10.6K) possessing BiS$_2$ layers based on first principles band calculation.
Kuroki, Kazuhiko +2 more
core +1 more source
How to determine Fermi vectors by angle resolved photoemission? [PDF]
, 1999 Angle resolved photoemission spectroscopy (ARPES) has been commonly applied to evaluate the shape of Fermi surfaces by employing simple criteria for the determination of the Fermi vector k_F parallel to the surface such as maximum photoemission intensity at the Fermi level or discontinuity in the momentum distribution function.
arxiv +1 more source