Results 81 to 90 of about 15,148,093 (364)
East European Journal of PhysicsThe paper reports the results of study of composition, emission, and optical properties of polycrystalline W and Mo samples implanted with Ba+ ions and coated with submonolayer Ba atoms by applying Auger electron spectroscopy, secondary electron emission
D.А. Tashmukhamedova +4 more
doaj +1 more source
Persistent currents in carbon nanotubes
, 2002 Persistent currents driven by a static magnetic flux parallel to the carbon nanotube axis are investigated. Owing to the hexagonal symmetry of graphene the Fermi contour expected for a 2D-lattice reduces to two points. However the electron or hole doping
Ando +19 more
core +1 more source
Influence of Fermi Level Alignment with Tin Oxide on the Hysteresis of Perovskite Solar Cells.
ACS Applied Materials and Interfaces, 2018 We tune the Fermi level alignment between the SnO x electron transport layer (ETL) and Cs0.05(FA0.83MA0.17)0.95Pb(I0.83Br0.17)3 and highlight that this parameter is interlinked with current-voltage hysteresis in perovskite solar cells (PSCs). Furthermore,
Meltem F. Aygüler +9 more
semanticscholar +1 more source
Advanced Functional Materials, EarlyView.This work explores Li‐substituted P2 layered oxides for Na‐ion batteries by crystallographic and electrochemical studies. The effect of lithium on superstructure orderings, on phase transitions during synthesis and electrochemical cycling and on the interplay of O‐ versus TM‐redox is revealed via various advanced techniques, including semi‐simultaneous
Mingfeng Xu +5 more
wiley +1 more source
Improved Schottky junction analysis model
Functional DiamondThe intersection of the Fermi and impurity levels in the Schottky junction of boron-doped p-type diamond, a widely used p-type doping scheme for diamond, has been discovered. This indicates that the relationship between the ionization efficiency of boron
Kang Liu +5 more
doaj +1 more source
Reduction of Schottky Barrier Height at Graphene/Germanium Interface with Surface Passivation
Applied Sciences, 2019 Fermi level pinning at metal/semiconductor interfaces forbids a total control over the Schottky barrier height. 2D materials may be an interesting route to circumvent this problem. As they weakly interact with their substrate through Van der Waals forces,
Jules Courtin +7 more
doaj +1 more source
Terahertz Multiple Beam Steering Using Graphene Pancharatnam-Berry Metasurfaces
IEEE Photonics Journal, 2022 Pancharatnam-Berry metasurfaces have the great advantage of manipulating electromagnetic wave. At the same time, graphene has attracted much attention due to its unique electromagnetic responses in different Fermi levels.
Feng Zhao, Jiashuai Xu, Zhengyong Song
doaj +1 more source
Pairing in ultracold Fermi gases in the lowest Landau level [PDF]
Physical Review A, 2009 We study a rapidly rotating gas of unpolarized spin-1/2 ultracold fermions in the two-dimensional regime when all atoms reside in the lowest Landau level. Due to the presence of the spin degree of freedom both s-wave and p-wave interactions are allowed at ultralow temperatures.
Moller, G., Jolicoeur, Th., Regnault, N.
openaire +4 more sources
Advanced Functional Materials, EarlyView.The THz drive of the Mott insulating state of a rare‐earth nickelate induces instantaneous insulator‐metal transition via quantum tunneling of valence electrons across the bandgap. This transition is pure electronic and highly non‐thermal, which may find its applications in ultrafast opto‐electronics with enhanced performance and minimal device size ...
Gulloo Lal Prajapati +7 more
wiley +1 more source
High‐Entropy Magnetism of Murunskite
Advanced Functional Materials, EarlyView.The study of murunskite (K2FeCu3S4) reveals that its magnetic and orbital order emerges in a simple I4/mmm crystal structure with complete disorder in the transition metal positions. Mixed‐valence Fe ions randomly occupy 1/4 of the tetrahedral sites, with the remaining 3/4 being filled by non‐magnetic Cu+ ions.
Davor Tolj +18 more
wiley +1 more source