Results 81 to 90 of about 15,196,329 (270)

Adsorption/desorption and electrically controlled flipping of ammonia molecules on graphene [PDF]

, 2010
In this paper, we evaluate of the adsorption/ desorption of ammonia molecules on a graphene surface by studying the Fermi level shift. Based on a physically plausible model, the adsorption and desorption rates of ammonia molecules on graphene have been ...
Cai, W. W., Chen, D., Chen, S. S., Kang, J. Y., Li, X. S., Ren, Y. J., Ruoff, R. S., Zhu, Y. W., 康俊勇   +8 more
core   +2 more sources

Influence of Fermi Level Alignment with Tin Oxide on the Hysteresis of Perovskite Solar Cells.

ACS Applied Materials and Interfaces, 2018
We tune the Fermi level alignment between the SnO x electron transport layer (ETL) and Cs0.05(FA0.83MA0.17)0.95Pb(I0.83Br0.17)3 and highlight that this parameter is interlinked with current-voltage hysteresis in perovskite solar cells (PSCs). Furthermore,
Meltem F. Aygüler, A. Hufnagel, Philipp Rieder, M. Wussler, W. Jaegermann, T. Bein, V. Dyakonov, Michiel L. Petrus, A. Baumann, Pablo Docampo   +9 more
semanticscholar   +1 more source

Spin texture on the Fermi surface of tensile strained HgTe [PDF]

, 2012
We present ab initio and k.p calculations of the spin texture on the Fermi surface of tensile strained HgTe, which is obtained by stretching the zincblende lattice along the (111) axis.
Cellucci, D., Kane, C. L., Mele, E. J., Rappe, Andrew M., Teo, J. C. Y., Young, S. M., Zaheer, Saad   +6 more
core   +3 more sources

Studies of Electronic Structure across a Quantum Phase Transition in CeRhSb$_{1-x}$Sn$_x$ [PDF]

European Physical Journal B (2019) 92: 192, 2019
We study an electronic structure of CeRhSb$_{1-x}$Sn$_x$ system, which displays quantum critical transition from a Kondo insulator to a non-Fermi liquid at $x=0.13$. We provide ultraviolet photoelectron spectra of valence band obtained at 12.5 K. Acoherent peak at the Fermi level is not present in the data, but a signal related to 4f$^1$$_{7/2}$ final ...
arxiv   +1 more source

Electronic properties and Fermi surface of Ag(111) films deposited onto H-passivated Si(111)-(1x1) surfaces

, 2001
Silver films were deposited at room temperature onto H-passivated Si(111) surfaces. Their electronic properties have been analyzed by angle-resolved photoelectron spectroscopy.
A. Arranz, A. Goldmann, A. L. Wachs, A. Nishiyama, C. Grupp, C. J. Karlsson, F. Reinert, G. Fuster, G. Lee, G. Neuhold, G. S. Higashi, G. S. Higashi, H. Eckardt, J. Avila, J. Avila, J. F. Sánchez-Royo, J. F. Sánchez-Royo, J. G. Tobin, K. Fukutani, K. Hricovini, K. Oura, K. R. Roos, K. Sumitomo, K. Sumitomo, K. Takahashi, K. Takahashi, M. A. Mueller, M. A. Mueller, M. C. Asensio, M. Henzler, M. Naitoh, M. Naitoh, M. Naitoh, M. Sakurai, N. V. Smith, N. V. Smith, N. V. Smith, P. Dumas, P. Dumas, P. M. Echenique, P. T. Sprunger, R. Biswas, R. I. G. Uhrberg, R. Paniago, S. D. Kevan, S. D. Kevan, S. Gallego, S. Hasegawa, S. Hasegawa, S. Å. Lindgren, S. Å. Lindgren, T. C. Hsieh, T.-C. Chiang, Th. Straub, V. Pérez-Dieste, V. Yu. Aristov, X. Blase, X. Tong, Y. Nakajima, Z. H. Zhang   +59 more
core   +3 more sources

Unified mechanism of the surface Fermi level pinning in III-As nanowires [PDF]

, 2017
Fermi level pinning at the oxidized (110) surfaces of III-As nanowires (GaAs, InAs, InGaAs, AlGaAs) is studied. Using scanning gradient Kelvin probe microscopy, we show that the Fermi level at oxidized cleavage surfaces of ternary Al$_{x}$Ga$_{1-x}$As (0$\le$x$\le$0.45) and Ga$_{x}$In$_{1-x}$As (0$\le$x$\le$1) alloys is pinned at the same position of 4.
arxiv   +1 more source

Theoretical study of even denominator fractions in graphene: Fermi sea versus paired states of composite fermions [PDF]

PRB 76, 081403 (2007), 2007
The physics of the state at even denominator fractional fillings of Landau levels depends on the Coulomb pseudopotentials, and produces, in different GaAs Landau levels, a composite fermion Fermi sea, a stripe phase, or, possibly, a paired composite fermion state.
arxiv   +1 more source

Improved Schottky junction analysis model

Functional Diamond
The intersection of the Fermi and impurity levels in the Schottky junction of boron-doped p-type diamond, a widely used p-type doping scheme for diamond, has been discovered. This indicates that the relationship between the ionization efficiency of boron
Kang Liu, Tao Su, Tongbo Li, Qiaobai He, Saifei Fan, Jiaqi Zhu   +5 more
doaj   +1 more source

Reduction of Schottky Barrier Height at Graphene/Germanium Interface with Surface Passivation

Applied Sciences, 2019
Fermi level pinning at metal/semiconductor interfaces forbids a total control over the Schottky barrier height. 2D materials may be an interesting route to circumvent this problem. As they weakly interact with their substrate through Van der Waals forces,
Jules Courtin, Alain Moréac, Gabriel Delhaye, Bruno Lépine, Sylvain Tricot, Pascal Turban, Philippe Schieffer, Jean-Christophe Le Breton   +7 more
doaj   +1 more source

Coulomb Drag Between Parallel Ballistic Quantum Wires

, 1999
The Coulomb drag between parallel, {\it ballistic} quantum wires is studied theoretically in the presence of a perpendicular magnetic field B. The transresistance R_D shows peaks as a function of the Fermi level and splitting energy between the 1D ...
A. Laikhtman, A. Rojo, B. Tanatar, C.C. Eugster, H. Rubel, H.C. Tso, H.C. Tso, H.C. Tso, K. Flensberg, K. Flensberg, L. Zheng, M. Bonsager, M. Okuda, N.P.R. Hill, O. Raichev, O.E. Raichev, O.E. Raichev, P. Debray, P. Vasilopoulos, T. Gramila, U. Sivan, V.L. Gurevich, Yu.M. Sirenko   +22 more
core   +1 more source