Results 101 to 110 of about 7,151,360 (379)

Universal Superconductivity in FeTe and All‐Iron‐Based Ferromagnetic Superconductor Heterostructures

open access: yesAdvanced Functional Materials, EarlyView.
The first all‐iron‐based ferromagnetic superconductor heterostructures with high‐temperature superconductivity and strong ferromagnetism aredemonstrated. From this, it is discovered that FeTe becomes universallysuperconducting with a minute level of cationic impurities through doping ordiffusion from neighboring layers, suggesting its ground state can ...
Hee Taek Yi   +12 more
wiley   +1 more source

Scalable T2 resistivity in a small single-component Fermi surface [PDF]

open access: yesScience, 2015
Trying to break a stubborn law The electrical resistivity of most metals at low temperatures has a characteristic quadratic dependence on temperature.
Xiao Lin, B. Fauqué, Kamran Behnia
semanticscholar   +1 more source

Perfect Ultraviolet Absorbers via Disordered Polarizonic Metasurfaces for Multiband Camouflage and Stealth Technologies

open access: yesAdvanced Functional Materials, Volume 35, Issue 14, April 3, 2025.
An ultrathin polarizonic metasurface achieves multiband camouflage and stealth with near‐perfect ultraviolet (UV) absorption, visible light blending, and infrared signature masking. Leveraging earth‐abundant materials, this design creates a reflective color palette through polarizonic effects, integrating transparent and non‐plasmonic materials.
Mhd Adel Assad, Mady Elbahri
wiley   +1 more source

The structural, magnetic, optoelectronic, and mechanical characteristics of NaGeX3 perovskites under pressure for soler-cell applications

open access: yesMaterials Research Express
This study examines the physical properties of germanium-based halide perovskite through Density Functional Theory (DFT) computations. The physical, optical, mechanical, and magnetic properties of NaGeX _3 (X = Cl, Br, and I) were examined with the ...
Istiak Ahmed Ovi   +3 more
doaj   +1 more source

Atomically Flat Dielectric Patterns for Bandgap Engineering and Lateral Junction Formation in MoSe2 Monolayers

open access: yesAdvanced Functional Materials, Volume 35, Issue 15, April 10, 2025.
This study presents a method to create atomically flat dielectric patterns of SiO2 and AlOx for MoSe2 monolayers, forming lateral heterojunctions with minimal strain. The dielectric pattern modulates excitonic properties, contact potential, and carrier dynamics, demonstrating a tunable approach for enhancing the optoelectronic properties of 2D ...
Philipp Moser   +11 more
wiley   +1 more source

The high-field Fermi surface of YbRh2Si2 [PDF]

open access: yes, 2008
We present quantum oscillation measurements of YbRh2Si2 at magnetic fields above the Kondo-suppression scale H0 ~ 10 T. Comparison with electronic structure calculations is complicated because the "small" Fermi surface, where the Yb 4f-quasi-hole is not contributing to the Fermi volume, and "large" Fermi surface, where the Yb 4f-quasi-hole is ...
arxiv   +1 more source

Fermi surface interconnectivity and topology in Weyl fermion semimetals TaAs, TaP, NbAs, and NbP [PDF]

open access: yes, 2015
The family of binary compounds including TaAs, TaP, NbAs, and NbP was recently discovered as the first realization of Weyl semimetals. In order to develop a comprehensive description of the charge carriers in these Weyl semimetals, we performed detailed ...
Chi-Cheng Lee   +13 more
semanticscholar   +1 more source

Recent Advances in Single‐Atom Catalyst for Solar Energy Conversion: A Comprehensive Review and Future Outlook

open access: yesAdvanced Functional Materials, Volume 35, Issue 16, April 18, 2025.
This review highlights the potential of single‐atom catalysts in three key photocatalytic reactions: the hydrogen evolution reaction (HER), nitrogen reduction reaction for ammonia synthesis, and carbon dioxide reduction reaction (CO2RR) for chemical fuels.
Saad Mehmood   +5 more
wiley   +1 more source

Self-energy corrections to anisotropic Fermi surfaces

open access: yes, 2006
The electron-electron interactions affect the low-energy excitations of an electronic system and induce deformations of the Fermi surface. These effects are especially important in anisotropic materials with strong correlations, such as copper oxides ...
F. Guinea   +10 more
core   +2 more sources

Ultra‐Fast Non‐Volatile Resistive Switching Devices with Over 512 Distinct and Stable Levels for Memory and Neuromorphic Computing

open access: yesAdvanced Functional Materials, EarlyView.
A materials and device design concept that comprises a self‐assembled ultra‐thin epitaxial ion‐transporting layer, an amorphous oxide overcoat oxygen‐blocking layer, and a partial filament formed during an electroforming step is proposed for low‐current multilevel resistive switching devices.
Ming Xiao   +17 more
wiley   +1 more source

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