Results 91 to 100 of about 225,954 (203)
Comparison of tunability efficiency between vacuum‐deposited PLD‐BTO films grown at Td = 550°C in the present study and representative previous reports. ABSTRACT Electrically tunable dielectric thin films are essential components for next‐generation low‐voltage electronic devices.
Shinya Kondo +7 more
wiley +1 more source
Domain Switching Dynamics in Relaxor PNN–PZT Ceramics With Nano‐Domain Morphology
The dynamic behavior of domain switching and hysteresis characteristics remain critical considerations for ferroelectric materials. Investigations in this area are of substantial importance for the physical understanding and emerging applications of ...
Xudong Qi +6 more
doaj +1 more source
Unveiling the mechanism of substitution-induced high piezoelectric performance in PLZT ceramics
Ferroelectric lead zirconate titanate (PZT, PbZr1−xTixO3) dominates the piezoelectric ceramic market because of its high piezoelectric coefficient, high thermal stability and low processing cost.
Ciaran Joseph O’Malley +7 more
doaj +1 more source
Enhanced Spin‐Reorientation Transition and Polarization in DyFeO3 Thin Films
Epitaxial strain in antiferromagnetic orthoferrite thin films enhances known bulk properties into a parameter range that makes them more accessible for potential applications. We show that bulk polar properties move from 4 K towards room temperature and the magnetic field‐induced AFM to FM spin‐flip in the paramagnetic Dy lattice when applying small ...
Banani Biswas +7 more
wiley +1 more source
Oxygen‐scavenging‐induced self‐formed interlayers regulate Schottky‐barrier modulation in IGZO memristors, producing a fundamental trade‐off between synaptic update linearity and retention. A preserved AlOx interlayer moderates voltage distribution and enables gradual, nearly linear conductance updates, whereas a soft‐broken SiO2 interlayer provides a ...
Jae Woo Lee +11 more
wiley +1 more source
Commensurate modulated antiferroelectric ceramics exhibit limited application prospects, a quasi transient antiferroelectric-ferroelectric phase transition has locked their energy storage performance.
Guanglong Ge +9 more
doaj +1 more source
Dielectric and AC-conductivity studies of Dy2O3 doped (K0.5Na0.5)NbO3 ceramics
(K0.5Na0.5)NbO3 + x wt.% Dy2O3 (x = 0–1.5) ferroelectric ceramics were prepared by conventional solid state reaction method. XRD patterns revealed that orthorhombic symmetry has transformed into psuedocubic symmetry with increasing the substitution of ...
Mahesh Peddigari +2 more
doaj +1 more source
Photo‐Dielectric Synaptic Plasticity in Zn‐Doped BaAl2O4
Localized photoexcited electrons in 2٠ZnO3‐VO defect complexes enable persistent and programmable photo‐dielectric modulation in Zn‐substituted BaAl2O4, giving rise to synaptic‐like plasticity under pulsed light irradiation. ABSTRACT Optically reconfigurable dielectrics represent an emerging route toward low‐power, spatially addressable neuromorphic ...
Masashi Sugino +4 more
wiley +1 more source
Development of lead-free thin-film dielectrics for capacitor applications [PDF]
This PhD project aims to develop lead-free thin-film dielectric materials for fixed value, voltage tunable and high-k zipping variable capacitors using growth techniques that can be scaled for silicon batch fabrication.
Darbyshire, David Anthony
core +2 more sources
The development of piezoelectric ceramics characterized by both large piezoelectric response and high-temperature stability is imperative for the advancement of practical electromechanical devices.
Kai Li +11 more
doaj +1 more source

