Results 91 to 100 of about 12,171 (252)

Synthesis and intrinsic out-of-plane ferroelectricity of 2D Bi2SiO5

Nano Research
Two-dimensional (2D) ferroelectric materials demonstrate promising applications in nanoelectronics owing to their ultrathin thickness and spontaneous polarization.
Di Wang, Yingying Liu, Hongmei Zhang, Dan Li, Hua Zhang, Liqiang Zhang, Shanhao Li, Miaomiao Liu, Zhihui Chen, Xidong Duan   +9 more
doaj   +1 more source

Atomic scale symmetry and polar nanoclusters in the paraelectric phase of ferroelectric materials. [PDF]

Nat Commun, 2021
Bencan A, Oveisi E, Hashemizadeh S, Veerapandiyan VK, Hoshina T, Rojac T, Deluca M, Drazic G, Damjanovic D.   +8 more
europepmc   +1 more source

Magnetoelectric Nanoparticle‐Based Wireless Brain–Computer Interface: Underlying Physics and Projected Technology Pathway

Advanced Science, EarlyView.
Magnetoelectric nanoparticles (MENPs) enable fully wireless, minutely invasive neuromodulation, and potentially neural recording, by converting magnetic into electric and, conversely, electric into magnetic fields, respectively, at high spatiotemporal resolution.
Elric Zhang, Max Shotbolt, Mostafa Abdel‐Mottaleb, Shawnus Chen, Victoria Andre, Jieyuan Tian, Jonathan Shulgach, Max Murphy, Brian Noga, Ping Liang, Darcy Griffin, Douglas Weber, Marta Pardo, Salvador Pane, Sakhrat Khizroev   +14 more
wiley   +1 more source

Two‐Dimensional Triferroics: From Fundamental Couplings to Multifunctional Applications

Advanced Science, EarlyView.
This graphic summarizes the three main types of currently reported 2D triferroic couplings. From the structural perspective, existing systems can be broadly classified into two categories, which exhibit distinct symmetry features and coupling behaviors. Beyond the lattice difference, a third type involves the interplay among ferroelectricity, magnetism,
Yang Li, Jialin Gong, Zhiqing Li
wiley   +1 more source

Polarity-dependent ferroelectric modulations in two-dimensional hybrid perovskite heterojunction transistors

Nature Communications
The non-volatile spontaneous ferroelectric polarization field serves as a cornerstone for applying ferroelectric materials in electronic devices, yet it is frequently mitigated by charge trapping at defect sites. Achieving an effective transition between
Enlong Li, Weixin He, Ruixue Wang, Chi Zhang, Hongmiao Zhou, Yu Liu, Yijia Yuan, Kian Ping Loh, Junhao Chu, Wenwu Li   +9 more
doaj   +1 more source

Physical origin of hafnium-based ferroelectricity

Computational Materials Today
This review presents an overview of the developmental history of hafnium-based ferroelectric materials and their various potential applications. It delves into the origins of hafnium-based ferroelectric phases and summarizes recent research advancements ...
Shuning Lv, Tengfei Cao, Zihe Wang, Tingxiao Xie, Shuang Gao, Gilberto Teobaldi, Qi Hu, Li-Min Liu   +7 more
doaj   +1 more source

Engineering of Crystal and Domain Structures in Epitaxial Y:HfO2 Thin Films by YSZ Substrate Miscut

Advanced Science, EarlyView.
We investigate how YSZ substrate miscut influences crystal structure and domain formation in epitaxial Y‐doped HfO2 thin films. Using magnetron sputtering, high‐resolution X‐ray diffraction, atomic‐resolution scanning transmission electron microscopy, and first‐principles calculations, we systematically examine the characteristics of thickness‐ and ...
Jun Young Lee, Hyung‐Jin Choi, Kun Hee Ye, Haneul Choi, Byeong‐hyeon Lee, Min‐Seok Kim, Dong‐Hun Han, June Hyuk Lee, Sung Ok Won, Tae Heon Kim, Hye Jung Chang, Jung‐Hae Choi, Seung‐Hyub Baek   +12 more
wiley   +1 more source

Diverse Landscape of Tunable Magnetic, Topological, and Ferroelectric States in 2D Ti3Se3Te2

Advanced Science, EarlyView.
Ti3Se3Te2 emerges as a multifunctional 2D van der Waals platform. The monolayer is a dynamically stable ferromagnetic quantum anomalous Hall insulator. In bilayers, two stacking configurations yield distinct phases: AA‐stacking hosts an altermagnetic quantum spin Hall insulator, while AA′‐stacking exhibits three‐state in‐plane ferroelectricity ...
Jiangtao Yu, Jingbo Bai, Yali Yang, Shifeng Qian, Xiaotian Wang, Zhuhong Liu   +5 more
wiley   +1 more source

Van der Waals Heterostructures for Next-Generation Spintronics: Multiferroic-Mediated Magnetoelectric Properties. [PDF]

Adv Sci (Weinh)
As CMOS technology approaches fundamental energy limits, new paradigms for low‐power information processing are required. Magnetic systems are attractive for their spin transport, yet current‐induced magnetization control is energy inefficient. Multiferroic heterostructures enable energy‐efficient electric field manipulation of magnetism.
Lee D, Yang J, Oh I, Lee S.
europepmc   +2 more sources

Symmetry‐Driven Unconventional Magnetoelectric Coupling in Perovskite Altermagnets: From Bulk to the Two‐Dimensional Limit

Advanced Science, EarlyView.
The symmetry‐driven coexistence of altermagnetism and (anti)ferroelectricity in perovskites shows a strong dimensional dependence. Upon reducing the system from bulk to the two‐dimensional limit, only C‐type antiferromagnetic order retains ferroelectrically switchable altermagnetism, whereas A‐ and G‐type orders become conventional antiferromagnets ...
Zhou Cui, Ziye Zhu, Xunkai Duan, Bowen Hao, Xianzhang Chen, Jiayong Zhang, Tong Zhou   +6 more
wiley   +1 more source