Results 11 to 20 of about 10,762 (160)

Study of the structural and electrical behavior of Bi(Mg,Ti)O3 modified (Ba,Ca)TiO3 ceramics [PDF]

open access: yesJournal of Advanced Dielectrics, 2016
The ability of BaTiO3 to form solid solutions with different dopants (both iso- and aliovalent) makes it versatile for various applications. In the present study, (Ba,Ca)TiO3 (BCT) is modified with Bi(MgTi)O3 (BMT) in search for new lead-free ...
Md. Kashif Shamim   +4 more
doaj   +1 more source

A Modified Vancomycin Molecule Confers Potent Inhibitory Efficacy against Resistant Bacteria Mediated by Metallo-β-Lactamases

open access: yesMolecules, 2022
Multidrug-resistant bacterial infections mediated by metallo-β-lactamases (MβLs) have grown into an emergent health threat, and development of novel antimicrobials is an ideal strategy to combat the infections.
Le Zhai   +8 more
doaj   +1 more source

Perspective on Porous Piezoelectric Ceramics to Control Internal Stress

open access: yesNanoenergy Advances, 2022
Due to the unique electromechanical energy conversion capability of ferroelectric materials, they have been at the forefront of materials science for a variety of applications such as sensors, actuators and energy harvesting.
Xiang Zhou   +6 more
doaj   +1 more source

Formation of self-assembled nanodomain structures in single crystals of uniaxial ferroelectrics lithium niobate, lithium tantalate and strontium–barium niobate [PDF]

open access: yesJournal of Advanced Dielectrics, 2014
The formation and evolution of the self-assembled nanodomain structures during polarization reversal have been comparatively analyzed in single crystals of various uniaxial ferroelectrics: LiNbO3 (LN), LiTaO3 (LT) and SrxBa1-xNb2O6 (SBN).
V. Ya. Shur   +5 more
doaj   +1 more source

Ferroelectrics as Smart Mechanical Materials [PDF]

open access: yesAdvanced Materials, 2017
The mechanical properties of materials are insensitive to space inversion, even when they are crystallographically asymmetric. In practice, this means that turning a piezoelectric crystal upside down or switching the polarization of a ferroelectric should not change its mechanical response.
Cordero Edwards, Kumara   +4 more
openaire   +6 more sources

Ferroelectric HfO2-based materials for next-generation ferroelectric memories [PDF]

open access: yesJournal of Advanced Dielectrics, 2016
Ferroelectric random access memory (FeRAM) based on conventional ferroelectric perovskites, such as Pb(Zr,Ti)O3 and SrBi2Ta2O9, has encountered bottlenecks on memory density and cost, because those conventional perovskites suffer from various issues ...
Zhen Fan, Jingsheng Chen, John Wang
doaj   +1 more source

Ferroelectric, Piezoelectric Mechanism and Applications

open access: yesJournal of Asian Ceramic Societies, 2022
The features of ferroelectric materials and their applications are presented. State-of-the-art employment of characterization techniques, and the properties of ferroelectric materials are described.
Arun Singh   +4 more
doaj   +1 more source

A review of ferroelectric materials for high power devices

open access: yesJournal of Materiomics, 2022
Compact autonomous ultrahigh power density energy storage and power generation devices that exploit the spontaneous polarization of ferroelectric materials are capable of producing hundreds of kilovolt voltages, multi-kiloampere currents, and megawatt ...
Sergey I. Shkuratov   +1 more
doaj   +1 more source

Competition between Ferroelectric and Ferroelastic Domain Wall Dynamics during Local Switching in Rhombohedral PMN-PT Single Crystals

open access: yesNanomaterials, 2022
The possibility to control the charge, type, and density of domain walls allows properties of ferroelectric materials to be selectively enhanced or reduced.
Denis Alikin   +9 more
doaj   +1 more source

Memory and Synaptic Devices Based on Emerging 2D Ferroelectricity

open access: yesAdvanced Electronic Materials, 2023
Memory devices are an essential part of modern electronics. Efforts to move beyond the traditional “read” and “write” of digital information in volatile and non‐volatile memory devices are leading to the rapid growth of neuromorphic technology.
Yanggeun Joo   +4 more
doaj   +1 more source

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