Results 101 to 110 of about 8,506,464 (324)

The role of ferroelectric-ferromagnetic layers on the properties of superlattice-based multiferroics

, 2005
A series of superlattices and trilayers composed of ferromagnetic and ferroelectric or paraelectric layers were grown on (100) SrTiO3 by the pulsed laser deposition technique. Their structural and magneto-electric properties were examined.
Mercey, B., Murugavel, P., Prellier, W., Raveau, B., Simon, Ch., Singh, M. P.   +5 more
core   +3 more sources

Intrinsic Nanopore‐Assisted SnP2S6 Memristors With Ti Ion Dynamics for Compact Logic‐In‐Memory Hardware

Advanced Functional Materials, EarlyView.
Tin hexathiophosphate memristors leverage intrinsic nanopores together with a guided filament formation strategy to regulate titanium ion motion and switching behavior. The devices support reliable nonvolatile memory and reconfigurable logic‐in‐memory, demonstrating 14 Boolean logic functions in a single cell.
Thaw Tint Te Tun, Sanchali Mitra, Hongxi Su, Jiali Huo, Haofei Zheng, Michel Bosman, Yee Sin Ang, Kah‐Wee Ang   +7 more
wiley   +1 more source

Progress in the Sputtering Preparation of Hf0.5Zr0.5O2 Ferroelectric Films and Memories

Advanced Materials Interfaces
Since the first report of ferroelectric HfO2 in 2011, researchers are making rapid progress in the understanding of both material properties and applications.
Kun Chen, Dan Zheng, Jie Gao, Hao Wang, Baoyuan Wang   +4 more
doaj   +1 more source

Magnetic-field-induced switching between ferroelectric phases in orthorhombic-distortion-controlled $R$MnO$_{3}$

, 2005
We have investigated the dielectric and magnetic properties of Eu$_{0.595}$Y$_{0.405}$MnO$_{3}$ $without$ the presence of the 4$f$ magnetic moments of the rare earth ions, and have found two ferroelectric phases with polarization along the $a$ and $c ...
Alshin B. I., Astrov D. N., D. Akahoshi, H. Kuwahara, K. Noda, M. Akaki, T. Kikuchi   +6 more
core   +1 more source

Molecularly Engineered Highly Stable Memristors with Ultra‐Low Operational Voltage: Integrating Synthetic DNA with Quasi‐2D Perovskites

Advanced Functional Materials, EarlyView.
Molecularly engineered memristors integrating Ag nanoparticle–embedded synthetic DNA with quasi‐2D halide perovskites enable ultra‐low‐operational voltage, forming‐free resistive switching, and record‐low power density. This synergistic integration of customized DNA and 2D OHP in bio‐hybrid architecture enhances charge transport, reduces variability ...
Kavya S. Keremane, Abhinav Gorthy, Luyao Zheng, Chiranth C Ravi, Haodong Wu, Jiamao Zheng, Neela H. Yennawar, Shashank Priya, Rashmi Jha, Bed Poudel   +9 more
wiley   +1 more source

High-Performance Ferroelectric Capacitors Based on Pt/BaTiO₃/SrRuO₃/SrTiO₃ Heterostructures for Nonvolatile Memory Applications

Crystals
BaTiO3 (BTO), a lead-free chalcogenide ferroelectric material, has emerged as a promising candidate for ferroelectric memories due to its advantageous ferroelectric properties, notable flexibility, and mechanical stability, along with a high dielectric ...
Zengyuan Fang, Yiming Peng, Haiou Li, Xingpeng Liu, Jianghui Zhai   +4 more
doaj   +1 more source

Multibit Ferroelectric HfZrO Memcapacitor for Non‐Volatile Analogue Memory and Reconfigurable Electronics

Advanced Functional Materials, EarlyView.
Ferroelectric memcapacitors enable non‐volatile, voltage‐programmable capacitance tuning for adaptive electronics. A TiN/HfZrO/TiN device stack demonstrates more than eight stable capacitance states within a 24 pF memory window in compact 60 ×$\times$ 60 μm2$\umu{\rm m}^{2}$ devices at low operating voltages.
Deepika Yadav, Spyros Stathopoulos, Patrick Foster, Andreas Tsiamis, Mohamed Awadein, Hannah Levene, Themis Prodromakis   +6 more
wiley   +1 more source

Ferroelectric Quantum Dots for Retinomorphic In‐Sensor Computing

Advanced Materials, EarlyView.
This work has provided a protocol for fabricating retinomorphic phototransistors by integrating ferroelectric ligands with quantum dots. The resulting device combines ferroelectricity, optical responsiveness, and low‐power operation to enable adaptive signal amplification and high recognition accuracy under low‐light conditions, while supporting ...
Tingyu Long, Huanyu Zhou, Jaewan Ko, Hongwei Tan, Jaemin Lim, Yanfei Zhao, Daehan Kang, Eojin Yoon, Gyeong‐Tak Go, Somin Kim, Seung‐Woo Lee, Chan‐Yul Park, Hyojun Choi, Hyeran Kim, Hyung Joong Yun, Sung Hyuk Park, Kwan Sik Park, Jeong Woo Park, Mungeun Kim, Yong Soo Cho, Ho Won Jang, Wenqiang Yang, Min Hyuk Park, Wan Ki Bae, Sebastiaan van Dijken, Joona Bang, Tae‐Woo Lee   +26 more
wiley   +1 more source

Domain walls of ferroelectric BaTiO3 within the Ginzburg-Landau-Devonshire phenomenological model

, 2010
Mechanically compatible and electrically neutral domain walls in tetragonal, orthorhombic and rhombohedral ferroelectric phases of BaTiO3 are systematically investigated in the framework of the phenomenological Ginzburg-Landau-Devonshire (GLD) model with
H. L. Hu, I. Rychetsky, J. Hlinka, P. Marton, V. A. Zhirnov, V. A. Zhirnov, V. Janovec   +6 more
core   +1 more source

Effect of grain size on dielectric and ferroelectric properties of nanostructured Ba0.8Sr0.2TiO3 ceramics

Journal of Advanced Ceramics, 2015
Barium strontium titanate (Ba0.8Sr0.2TiO3, BST) nanocrystalline ceramics have been synthesized by high energy ball milling. As the sintering temperature increases from 1200 °C to 1350 °C, the average grain size of BST ceramics increases from 86 nm to 123
V. R. Mudinepalli, Leng Feng, Wen-Chin Lin, B. S. Murty   +3 more
semanticscholar   +1 more source