Results 131 to 140 of about 8,506,464 (324)

Improved Ferroelectric Properties in Hf_0.5Zr_0.5O₂ Thin Films by Microwave Annealing. [PDF]

Nanomaterials (Basel), 2022
Zhao B, Yan Y, Bi J, Xu G, Xu Y, Yang X, Fan L, Liu M.   +7 more
europepmc   +1 more source

High‐κ Perovskite‐Like Ternary Niobium Oxide Dielectrics for 2D Electronics

Advanced Materials, EarlyView.
High‐κ dielectrics are vital for scaled electronics. Here, a family of 2D high‐κ perovskite‐like ternary niobium oxides is synthesized via a molten salt‐assisted method. Their integration into FETs and logic gates reveals superior switching characteristics, providing a fresh material platform and new insights for the advancement of high‐performance 2D ...
Biao Zhang, Jianmiao Guo, Jianmin Yan, Jialiang Wang, Chao Yun, Guang Zeng, Jie Li, Cong Wang, Zhengdao Xie, Yanglong Hou, Yang Chai   +10 more
wiley   +1 more source

High-temperature electromechanical actuation of relaxor ferroelectric polymers blended with normal ferroelectric polymer

Giant
Soft actuators that can operate at high temperatures are of great interest in emerging research fields such as microfluidics, soft robotics, automotive, aircraft, and bioelectronics.
Quang Van Duong, Chanho Park, Yujeong Lee, Seungmin Lee, Thu Thi Nguyen, Vinh Phu Nguyen, Kyuho Lee, Fabrice Domingues Dos Santos, Cheolmin Park, Seung Tae Choi   +9 more
doaj   +1 more source

Temperature and E-Poling Evolution of Structural, Vibrational, Dielectric, and Ferroelectric Properties of Ba_1-xSr_xTiO₃ Ceramics (x = 0, 0.1, 0.2, 0.3, 0.4 and 0.45). [PDF]

Materials (Basel), 2023
Suchanicz J, Sitko D, Stanuch K, Świerczek K, Jagło G, Kruk A, Kluczewska-Chmielarz K, Konieczny K, Czaja P, Aleksandrowicz J, Wieczorek W, Grygierek J, Sokolowski M, Stachowski G, Antonova M, Sternberg A.   +15 more
europepmc   +1 more source

Emergent Freestanding Complex Oxide Membranes for Multifunctional Applications

Advanced Materials, EarlyView.
This review surveys freestanding oxide membranes and covers fabrication and three pathways for studies and devices: strain‐free and strained membranes, and van der Waals‐integrated heterostructures. We show how coupled oxide responses map onto these routes and cross‐couple to expand behaviors.
Baowen Li, Yanran Liu, Jinjin Liu, Josephine Si Yu See, Kaijian Xing, Dong‐Chen Qi, Xiao Renshaw Wang   +6 more
wiley   +1 more source

Perovskite solar cells with ferroelectricity

Information & Functional Materials
Halide perovskites show excellent optoelectronic properties for solar cell application. Notably, perovskite crystalline structures have been widely reported to deliver superior ferroelectric properties.
Tie Zhang, Huiming Luo, Mojtaba Abdi‐Jalebi, Hongzheng Chen, Lijian Zuo   +4 more
doaj   +1 more source

Influence of the Template Layer on the Structure and Ferroelectric Properties of PbZr_0.52Ti_0.48O₃ Films. [PDF]

ACS Omega, 2022
Lucke P, Nematollahi M, Bayraktar M, Yakshin AE, Ten Elshof JE, Bijkerk F.   +5 more
europepmc   +1 more source

On‐Surface Synthesis of Bismuth Monolayers through Ice‐Confined Redox Reactions

Advanced Materials, EarlyView.
We report an ice‐confined growth strategy for the synthesis of atomically thin 2D bismuth and related 2D metals. This approach involves rapid freezing of a BiCl3 aqueous solution on an aluminum foil using liquid nitrogen, which triggers interfacial redox reactions between the ice and the aluminum surface.
Zexiang He, Depeng Wang, Wentao Fan, Songlin Liu, Antonio Gaetano Ricciardulli, Haixia Zhong, Yiyong Mai, Paolo Samorì, Sheng Yang   +8 more
wiley   +1 more source

Oxygen scavenging of HfZrO₂-based capacitors for improving ferroelectric properties. [PDF]

Nanoscale Adv, 2022
Kim BH, Kuk SH, Kim SK, Kim JP, Geum DM, Baek SH, Kim SH.   +6 more
europepmc   +1 more source

Field‐Effect Transistors from Artificial Charged Domain Walls in Stacked Van der Waals Ferroelectric α‐In2Se3

Advanced Materials, EarlyView.
This study utilizes the van der Waals stacking of ferroelectric α$\alpha$‐In2Se3 to fabricate in‐plane artificial charged domain walls. These charged domain walls are electrically accessible, gate‐tunable, and show 2–9 orders of magnitude higher conductance than charged domain walls from thin film ferroelectrics, allowing their integration in field ...
Shahriar Muhammad Nahid, Haiyue Dong, Gillian M. Nolan, SungWoo Nam, Nadya Mason, Pinshane Y. Huang, Arend M. van der Zande   +6 more
wiley   +1 more source