Results 171 to 180 of about 8,506,464 (324)

Large enhancement of ferroelectric properties of perovskite oxides via nitrogen incorporation. [PDF]

Sci Adv
Wang T, Gong F, Ma X, Pan S, Wei XK, Kuo C, Yoshida S, Ku YC, Wang S, Yang Z, Hazra S, Zhang KHL, Liu X, Tang Y, Zhu YL, Chang CF, Das S, Ma X, Chen L, Xu B, Gopalan V, Bellaiche L, Martin LW, Chen Z.   +23 more
europepmc   +1 more source

Low‐Voltage and High‐k Properties of Bilayer HZO Capacitors at the Morphotropic Phase Boundary for Next‐Generation Memory Applications

Advanced Science, EarlyView.
The HfxZr1‐xO2‐based ferroelectric/antiferroelectric bilayer capacitor exhibits morphotropic‐phase‐boundary behavior with a high dielectric constant (∼52) at 2 V. Phase engineering stabilizes o/t‐phase coexistence and suppresses m‐phase formation, enabling capacitance enhancement and self‐optimization under cycling for scalable low‐voltage, high‐κ ...
Junseok Kim, Hyeonjung Park, Changwoo Han, Huiseong Shin, Myeongjae Choi, Changhwan Shin   +5 more
wiley   +1 more source

Interface Engineering Using Multiple La-Doped HfO₂ Epitaxial Subnanolayers To Improve the Ferroelectric Properties of Hf_0.5Zr_0.5O₂ Films. [PDF]

ACS Appl Electron Mater
Ghiasabadi Farahani M, Song T, Magén C, Zou J, Sánchez F, Fina I.   +5 more
europepmc   +1 more source

Utilizing Cooperative Proton–Electron Mixed Conduction Induced via Chemical Dedoping of Self‐Doped Poly(3,4‐ethylenedioxythiophene) Nanofilms for In‐Material Physical Reservoirs

Advanced Science, EarlyView.
This study demonstrates a new concept for high‐performance in‐material physical reservoirs (PRs). An intrinsic and cooperative ion–electron state, induced by chemical dedoping in self‐doped poly(3,4‐ethylenedioxythiophene) (S‐PEDOT) nanofilms, enhances the performance of in‐material PRs.
Yuya Ishizaki‐Betchaku, Motoaki Onishi, Tomoki Misaka, Mitsuo Hara, Hirokazu Yano, Hidenori Okuzaki, Jun Matsui, Tsuyoshi Hasegawa, Takuya Matsumoto, Hirofumi Tanaka, Shusaku Nagano   +10 more
wiley   +1 more source

Ferroelectric‐Polarization‐Driven Structural Engineering of Bi3Nb17O47 Anodes for High‐Performance Lithium‐Ion Batteries

Advanced Science, EarlyView.
A transformative ferroelectric‐polarization strategy is employed to overcome the intrinsic limitations of tungsten bronze (TTB)‐type anode materials in metal‐ion batteries, using Bi3Nb17O47 as a model system. By exploiting the non‐centrosymmetric crystal structure and field‐induced ionic displacements, controlled structural engineering with ...
Xiaoming Lou, Songjie Li, Chunfu Lin, Yanchao Li, Mingze Sun, Zhen Liu, Weiye Nie, Xiaolong Tang, Baoming Wang, Wenwu Cao, Renchao Che   +10 more
wiley   +1 more source

Polymer Composite Films with P(VDF-TrFE) and Molecular Ferroelectric Tris(hydroxymethyl) Nitromethane: Improvement of Their Ferroelectric Properties. [PDF]

Polymers (Basel)
Escobar-Castillo M, Duman S, Lupascu DC.
europepmc   +1 more source

Biocompatible Magnetopyroelectric Composite Films for Cell Stimulation

Advanced Science, EarlyView.
Magnetopyroelectric films couple Fe3O4 nanoparticles with pyroelectric P(VDF‐TrFE) to turn alternating magnetic fields into controlled heat and pyroelectric currents. This heavy‐metal free platform safely boosts neural progenitor cells differentiation via synergistic thermal and pyroelectrical cues, engages AKT and calcium pathways, and opens practical
Hao Ye, Joaquin Llacer‐Wintle, Semih Sevim, Elric Zhang, Denis von Arx, Lukas Hertle, Martina Accursi, Minsoo Kim, Josep Puigmartí‐Luis, Bradley J. Nelson, Xiang‐Zhong Chen, Salvador Pané   +11 more
wiley   +1 more source

Hydrothermal Engineering of Ferroelectric PZT Thin Films Tailoring Electrical and Ferroelectric Properties via TiO₂ and SrTiO₃ Interlayers for Advanced MEMS. [PDF]

Micromachines (Basel)
Li CL, Feng GH.
europepmc   +1 more source

Integration of Freestanding High‐k Oxide Membranes for 2D Ferroelectric Field‐Effect Transistors

Advanced Science, EarlyView.
This work introduces a defect‐tolerant integration strategy that enables freestanding BaTiO3 membranes to form low‐leakage top‐gate junctions with MoS2. The resulting FeFETs exhibit a record 0.22 V nm−1 memory window, ultrahigh‐k response, and near‐ideal subthreshold swings.
Zejing Guo, Xuyang Sha, Fang Xu, Guangyi Huang, Jinfeng Zhang, Yang Mou, Guorui Zhao, Jiaqi Liu, Qing Lan, Wenqing Song, Cheng Zhang, Hai Huang, Changlin Zheng, Lingfei Wang, Hangwen Guo, Jian Shen, Wu Shi   +16 more
wiley   +1 more source

Ferroelectric Properties of Polymer-Semiconductor Hybrid Material or Composite under Optical Excitation. [PDF]

Polymers (Basel)
Kober M, Smykalla D, Ploss B, Wächtler M, Kumar K, Stelter M, Engel S.   +6 more
europepmc   +1 more source