Results 181 to 190 of about 9,574,825 (357)

Epitaxial Bi2O2Se/Bi2O5Se Thin Films: Revealing Electric‐Field‐Driven Oxidation and Resistive Switching Dynamics for Advanced Memory Devices

Advanced Science, EarlyView.
Bi2O2Se/Bi2O5Se bilayer heterostructure exhibits reversible structural evolution during device operation, directly revealed by atomic‐scale investigation. Oxygen vacancy redistribution governs filament formation and rupture, enabling stable multilevel resistive switching and synaptic‐like behaviors.
Yen‐Jung Chen, Yong‐Jyun Wang, Zi‐Qin Hong, Chien‐Hua Wang, Yi‐Ning Wang, Jia De Cheng, Chun‐Wei Huang, Ying‐Hao Chu, Wen‐Wei Wu   +8 more
wiley   +1 more source

Stress‐to‐Light Conversion in an Earth‐Abundant Oxide Semiconductor

Advanced Science, EarlyView.
Stress‐to‐light conversion in solids represents a unique photonic functionality, yet it has never been realized in a chemically simple and sustainable material. Here, we show that sustainable semiconductor ZnO exhibits strong near‐infrared (NIR) luminescence under elastic stress when defect‐engineered to stabilize the p‐type state.
Tomoki Uchiyama, Koki Otonari, Reona Omori, Guangfa Yang, Eiji Nishibori, Ying Chen, Xu‐Guang Zheng, Chao‐Nan Xu   +7 more
wiley   +1 more source

Strain engineering of optoelectronic and ferroelectric properties in <i>R</i>3-phase Zn₃TeO₆: a first-principles study. [PDF]

RSC Adv
Chen XY, Lai GW, Ning TR, Hu YL, Yang XD, Chen SR, Liu Y, Xu HK.   +7 more
europepmc   +1 more source

Targeting Golgi–STING Signaling to Reprogram Innate and Adaptive Immunity for the Treatment of Implant‐Associated Infections

Advanced Science, EarlyView.
This study presents an ultrasound‐responsive nanoplatform, CS‐BT@MZ@NEs, with a BaTiO3/Mn‐Zif‐8 core and a chondroitin sulfate coating for Golgi targeting. By leveraging neutrophil hitchhiking, it enables targeted delivery to infection sites. Under ultrasound stimulation, CS‐BT@MZ@NEs generates ROS and modulates Golgi pH to activate cGAS–STING ...
Shicheng Huo, Naifeng Zhu, Zhuocheng Lyu, Yifei Liu, Zhenjiang Xu, Chun Zhou, Yaochao Zhao, Changgui Shi   +7 more
wiley   +1 more source

Large enhancement of ferroelectric properties of perovskite oxides via nitrogen incorporation. [PDF]

Sci Adv
Wang T, Gong F, Ma X, Pan S, Wei XK, Kuo C, Yoshida S, Ku YC, Wang S, Yang Z, Hazra S, Zhang KHL, Liu X, Tang Y, Zhu YL, Chang CF, Das S, Ma X, Chen L, Xu B, Gopalan V, Bellaiche L, Martin LW, Chen Z.   +23 more
europepmc   +1 more source

Domain boundary engineering

We review the idea that domain boundaries, rather than domains, can carry information and act as memory devices. Domains are bulk objects; their large response to changing external fields is related to their change in volume, which implies the movement ...
Salje, E. K. H., Zhang, H. L.
core   +1 more source

Asymmetric Electrostrain/Electrobending in Piezoelectric Ceramics: Role of Defect Dipoles or Oxygen Vacancies

Advanced Science, EarlyView.
Defect‐configurational origins of the asymmetric apparent electrostrain are revealed in different piezoelectric ceramics via atomic‐scale visualization of defect configurations. Migration of oxygen vacancies leads to the electrobending effect in N2‐sintered BaTiO3, while defect dipoles in Ba0.99TiO2.99 generate true asymmetric electrostrain without ...
Jie Wang, Geng Huangfu, Hongjie Zhang, Tiannan Yang, Zhenhua Ma, Jingsheng Chen, Yun Liu, Yiping Guo   +7 more
wiley   +1 more source

Interface Engineering Using Multiple La-Doped HfO₂ Epitaxial Subnanolayers To Improve the Ferroelectric Properties of Hf_0.5Zr_0.5O₂ Films. [PDF]

ACS Appl Electron Mater
Ghiasabadi Farahani M, Song T, Magén C, Zou J, Sánchez F, Fina I.   +5 more
europepmc   +1 more source

Flexoelectricity in Photoconversion: Fundamentals, Materials, and Outlooks

Advanced Science, EarlyView.
Mechanical bending of a flexible cantilever induces a strain gradient in the photoactive material. The resulting flexoelectric field couples with photovoltaic and photoconductive effects, modulating charge generation, separation, and collection. A comparative analysis of oxide perovskites, halide perovskites, and two‐dimensional materials is presented,
Xiang Huang, Feng Li, Rongkun Zheng
wiley   +1 more source

Large‐Scale Growth of Self‐Poled Ferroelectric Rashba Semiconductor α‐GeTe(111) Thin Films: A Crucial Step Towards Future CMOS‐Compatible Ferroelectric Spintronic Devices

Advanced Science, EarlyView.
Ferroelectric Rashba semiconductors promise ultralow‐power devices but lack industry‐quality films. This work demonstrates CMOS‐compatible fabrication of high‐quality α‐GeTe(111) films via magnetron sputtering, enabled by a 5 nm Sb2Te3 seed layer. Structural and ferroelectric analyses show robust, switchable polarization comparable to MBE films, paving
Jules Lagrave, Nicolas Bernier, Thomas Jalabert, Yoann Brûlé, Damien Térébénec, Pierre Meilleur, Hervé Roussel, Jean‐Baptiste Dory, Oussama J. Mouawad, Thibault Chommaux, Cristian Mocuta, Dominique Thiaudière, Laurent Vila, Françoise Hippert, Pierre Noé   +14 more
wiley   +1 more source