Results 221 to 230 of about 9,574,825 (357)
Ising machines are emerging as specialized hardware solvers for computationally hard optimization problems. This review examines five major platforms—digital CMOS, analog CMOS, emerging devices, coherent optics, and quantum systems—highlighting physics‐rooted advantages and shared bottlenecks in scalability and connectivity.
Hyunjun Lee, Joon Pyo Kim, Sanghyeon Kim
wiley +1 more source
Structural and electrical characterization of Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> thin films crystallized by rapid thermal annealing. [PDF]
Park J +4 more
europepmc +1 more source
Nonlinear Transverse Transport in a Ferromagnetic Polar Metal
This work reports the observation of a nonlinear transverse response in ferromagnetic polar SrRuO3(111) thin films. The nonlinear signal exhibits a sharp enhancement across the magnetic phase transition. Through detailed scaling and theoretical analysis, the authors attribute this behavior to a sign reversal of the Berry curvature triple, establishing ...
Xuyang Sha +13 more
wiley +1 more source
Soft Matter: A Tale of Eco-Friendly Materials, Self-Organised Phases and Biological Impact. [PDF]
Dierking I.
europepmc +1 more source
Superlattice-like structure and enhanced ferroelectric properties of intergrowth Aurivillius oxides. [PDF]
Yang H +6 more
europepmc +1 more source
Implications of Transient Negative Capacitance Effect in Ferroelectric Polarization Dynamics
Transient voltage artifacts observed during ferroelectric switching are shown to originate from measurement circuitry rather than intrinsic negative capacitance. By correlating switching current, time scale, and series resistance, this work establishes practical design rules for reliable pulse‐switching experiments and circuit integration of ...
Marin Alexe
wiley +1 more source
Robust and Compatible Ferroelectric Memories with Polycrystalline TiO2 Channel for 3D Integration
Robust and monolithic 3D compatible ferroelectric memories are realized using the polycrystalline TiO2 channel‐based FeFET. The review covers physical mechanisms of the TiO2 channel FeFET, quantitative benchmarking, and advanced planar/vertical architectures for monolithic 3D integration based on HfO2‐TiO2 gate stack, offering a roadmap for reliable ...
Xujin Song +10 more
wiley +1 more source
Low-temperature fabrication of BTO-based relaxor ferroelectric thick films with multi-layered architecture. [PDF]
Zhang H, Ma W, Zhang Z, Yi N, Hong J.
europepmc +1 more source

