Results 111 to 120 of about 204,595 (365)
Origin of ferroelectricity in the multiferroic barium fluorides BaMF4
We present a first principles study of the series of multiferroic barium fluorides with the composition BaMF4, where M is Mn, Fe, Co, or Ni. We discuss trends in the structural, electronic, and magnetic properties, and we show that the ferroelectricity ...
C. J. Bradley+8 more
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This work demonstrates an interphase strain engineering strategy to regulate capacitive energy storage performance in high‐entropy oxide thin films. Through introducing pyrochlore nanocolumns, the polarization response of perovskite unit cells is strengthened, yielding recoverable energy densities up to 93 J cm−3 with an efficiency of 83% under ...
Hao Luo+11 more
wiley +1 more source
We report first principles density functional perturbation theory calculations and inelastic neutron scattering measurements of the phonon density of states, dispersion relations and electromechanical response of PbTiO3, BaTiO3 and SrTiO3.
A. W. Hewat+10 more
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The use of ferroelectric polarization to enhance photocatalytic and photoelectrocatalytic activity is an innovative, and increasingly studied route to improve the spatial separation of charge carriers and therefore enhance catalytic efficiency. These results demonstrate how the intrinsic properties of a ferroelectric film can extend charge carrier ...
Chloe Forrester+5 more
wiley +1 more source
Ferroic transition metal oxides, which exhibit spontaneous elastic, electrical, magnetic or toroidal order, exhibit functional properties that find use in ultrastable solid-state memories to sensors and medical imaging technologies.
Aguado-Puente+35 more
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Ferroelectrics at the nanoscale [PDF]
AbstractThere are several factors which make the investigation and understanding of nanoscale ferroelectrics particularly timely and important. Firstly, there is a market pressure, primarily from the electronics industry, to integrate ferroelectrics into devices with progressive decreases in size and increases in morphological complexity.
openaire +3 more sources
Al1‐xScxN‐Based Ferroelectric Domain‐Wall Memristors
(a) Conductive atomic force microscopy (CAFM) image of the initial state bidomain structure of the Al0.85Sc0.15N (a) showing an enhanced conductivity of the head‐to‐head domain boundary. (b) CAFM image of the same area after application of several −65 V, 1 s voltage pulses showing lower conductivity of the generated tail‐to‐tail domain walls.
Haidong Lu+11 more
wiley +1 more source
Recent progress in first-principles studies of magnetoelectric multiferroics
Materials that combine magnetic and ferroelectric properties have generated increasing interest over the last few years, due to both their diverse properties and their potential utility in new types of magnetoelectric device applications.
Anderson+78 more
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A New Memory Effect in Bulk Crystals of 1T‐TaS2
A new memory effect is discovered in 1T‐TaS₂, appearing as a temperature shift in the metal to insulator transition, coinciding with the recently reported ramp reversal memory. These findings imply that ramp reversal memory is an emergent phenomenon, likely to appear in many different systems that share a few basic properties, which are discussed in ...
Avital Fried+4 more
wiley +1 more source
The quest for electronic ferroelectricity in organic charge-transfer crystals
Organic ferroelectric materials are in demand in the growing field of environmentally friendly, lightweight electronics. Donor-Acceptor charge transfer crystals have been recently proposed as a new class of organic ferroelectrics, which may possess a new
Girlando, Alberto
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