Results 111 to 120 of about 13,067 (227)

Controlled Growth of Boron Nitride in Various Phases

open access: yesAdvanced Materials Interfaces, EarlyView.
Phase‐selective boron nitride growth is presented as a unified materials‐design problem across hexagonal, rhombohedral, cubic, and amorphous phases. By linking synthesis routes to thermodynamic stability, kinetic accessibility, surface diffusion, interfacial templating, and energetic activation, this review clarifies how bonding and stacking are ...
Pan Wu   +6 more
wiley   +1 more source

Breaking the synchrony of sliding ferroelectricity and sliding energy barrier

open access: yesnpj Computational Materials
Two-dimensional (2D) materials demonstrate exceptional sliding ferroelectricity, owing to their facilitated interface charge transfer and controllable interlayer sliding.
Qihao Liang, Huasong Qin, Yilun Liu
doaj   +1 more source

Synthesis and intrinsic out-of-plane ferroelectricity of 2D Bi2SiO5

open access: yesNano Research
Two-dimensional (2D) ferroelectric materials demonstrate promising applications in nanoelectronics owing to their ultrathin thickness and spontaneous polarization.
Di Wang   +9 more
doaj   +1 more source

Ferroelectric Catalysts in the Hydrogen Evolution Reaction: A Perspective. [PDF]

open access: yesAdv Sci (Weinh)
This perspective summarizes recent advances in ferroelectric (FE) catalysts for the hydrogen evolution reaction (HER). It first introduces HER fundamentals and FE mechanisms, then classifies FE catalysts into single‐phase, single‐atom‐modified, heterostructured, and other engineered types, with representative examples.
Lu R   +6 more
europepmc   +2 more sources

Boosting Ferroelectricity: 2D and Polymer Ferroelectric Hybrids Enabling Ambipolar Nonvolatile MoS<sub>2</sub> Memory Transistor. [PDF]

open access: yesAdv Sci (Weinh)
Two‐dimensional CuInP2S6 nanosheets are incorporated into a P(VDF‐TrFE) matrix to induce polarization‐cooperative ferroelectric coupling. The resulting P(VDF‐TrFE)/CuInP2S6 hybrid film exhibits reinforced ferroelectric ordering and reduced coercive electric fields compared with pristine P(VDF‐TrFE).
Jeong Y   +10 more
europepmc   +2 more sources

Recent Advances in Plasma‐Enhanced Atomic Layer Etching for Next‐Generation Nanofabrication

open access: yesAdvanced Materials Interfaces, EarlyView.
Continued semiconductor miniaturization demands atomic‐scale patterning and ultralow surface roughness beyond the capabilities of conventional reactive ion etching. This review highlights advances in isotropic and anisotropic plasma‐enhanced atomic layer etching since 2020, covering fundamental mechanisms, applications across major semiconductor ...
Shih‐Nan Hsiao
wiley   +1 more source

From the Discovery of the Giant Magnetocaloric Effect to the Development of High‐Power‐Density Systems

open access: yesAdvanced Materials Technologies, EarlyView.
The article overviews past and current efforts on caloric materials and systems, highlighting the contributions of Ames National Laboratory to the field. Solid‐state caloric heat pumping is an innovative method that can be implemented in a wide range of cooling and heating applications.
Agata Czernuszewicz   +5 more
wiley   +1 more source

Perovskite solar cells with ferroelectricity

open access: yesInformation & Functional Materials
Halide perovskites show excellent optoelectronic properties for solar cell application. Notably, perovskite crystalline structures have been widely reported to deliver superior ferroelectric properties.
Tie Zhang   +4 more
doaj   +1 more source

Nature‐Derived Chitosan Biopolymer: A Promising Candidate for Sustainable Electronics

open access: yesAdvanced Materials Technologies, EarlyView.
In the creation of environmentally friendly devices, nature‐derived chitosan biopolymer is a promising contender for sustainable electronic research. It can be utilized to create more ecologically friendly scalable gadgets and has a variety of uses in different active layers of electronics.
Joshua McDonald   +3 more
wiley   +1 more source

Disturb‐Resilient and Wake‐up‐Free 2T‐MFMFET Array for Storage and Computing Applications

open access: yesAdvanced Materials Technologies, EarlyView.
A disturb‐resilient and wake‐up‐free 2T‐MFMFET array fabricated using a FeRAM‐compatible process demonstrates excellent uniformity, a large memory window, and 3‐bit multi‐level‐cell storage capability. A newly proposed hybrid in‐memory computing scheme further enables accurate multiply–accumulate operations with minimal refresh overhead, highlighting ...
Chen‐Yi Cho   +6 more
wiley   +1 more source

Home - About - Disclaimer - Privacy