Results 301 to 310 of about 203,775 (365)
Single Molecular Semi-Sliding Ferroelectricity/Multiferroicity. [PDF]
Zhong T, Zhang H, Wu M.
europepmc +1 more source
Resolving the High‐k Paradox in Organic Field‐Effect Transistors Through Rational Dielectric Design
High‐k dielectrics are in great demand for developing organic transistors operating at low voltages. However, the actual influence of high‐k dielectrics has been ambiguous. This work clarifies the correlation of dielectric constant and mobility through highly miscible high‐k polymer blends and provides a rational strategy on designing high‐performance ...
Beomjin Jeong, Kamal Asadi
wiley +1 more source
Biodielectrics: old wine in a new bottle? [PDF]
Barnana HD+6 more
europepmc +1 more source
X-RAY STUDY ON THE PHASE BOUNDARY OF FERROELECTRIC CERAMICS OF K0.5Bi0.5TiO3—Na0.5Bi0.5TiO3 SYSTEM
GUO CHANG-LIN, WU YU-QIN, Tianbao Wang
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The device platform, which utilizes a photo‐crosslinked ionic gel electrolyte with a broad range of oxidation and reduction capabilities, can effectively evaluate and screen the thermoelectric material candidates with high potential across a wide range of doping levels, thereby minimizing the effort required to identify dopants compatible with ...
Sunbin Hwang+2 more
wiley +1 more source
Ultrathin ITO and ferroelectric HZO are used to fabricate synaptic transistors. The device has a great on/off ratio ≈108 with a memory window of 1.73 V, successfully simulates the characteristics of the human brain, and achieves good linearity of 0.45 for potential and 0.73 for depression and low asymmetry of 0.89.
Siwei Wang+8 more
wiley +1 more source
Engineering band structures of two-dimensional materials with remote moiré ferroelectricity. [PDF]
Ding J+11 more
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This paper presented ZnO‐based crossbar RRAMs by electrohydrodynamic (EHD) printing technology under in‐space manufacture environment as microgravity (µG). The crossbar structures of Ag/ZnO/Ag are fabricated under earth with in‐space microgravity. With the microgravity effect, a significant electroforming forming voltage reduced 89.3% as a storage ...
Yujian Huang+8 more
wiley +1 more source
Ambient Moisture-Induced Self Alignment of Polarization in Ferroelectric Hafnia. [PDF]
Wei LQ+9 more
europepmc +1 more source
Current Flow Mapping in Conducting Ferroelectric Domain Walls Using Scanning NV‐Magnetometry
Domain walls in ferroelectrics are mobile, electrically conductive interfaces that hold promise as functional elements in next‐generation, “reconfigurable” electronics. They often form complex networks, making transport characterization challenging. Current densities are visualised in conducting ferroelectric domain wall devices directly by imaging the
Conor J. McCluskey+3 more
wiley +1 more source