Results 301 to 310 of about 203,775 (365)

Resolving the High‐k Paradox in Organic Field‐Effect Transistors Through Rational Dielectric Design

open access: yesAdvanced Electronic Materials, EarlyView.
High‐k dielectrics are in great demand for developing organic transistors operating at low voltages. However, the actual influence of high‐k dielectrics has been ambiguous. This work clarifies the correlation of dielectric constant and mobility through highly miscible high‐k polymer blends and provides a rational strategy on designing high‐performance ...
Beomjin Jeong, Kamal Asadi
wiley   +1 more source

Biodielectrics: old wine in a new bottle? [PDF]

open access: yesFront Bioeng Biotechnol
Barnana HD   +6 more
europepmc   +1 more source

The Platform to Characterizing the Thermoelectric Materials by Photo‐Crosslinked Ionic Gel Electrolyte

open access: yesAdvanced Electronic Materials, EarlyView.
The device platform, which utilizes a photo‐crosslinked ionic gel electrolyte with a broad range of oxidation and reduction capabilities, can effectively evaluate and screen the thermoelectric material candidates with high potential across a wide range of doping levels, thereby minimizing the effort required to identify dopants compatible with ...
Sunbin Hwang   +2 more
wiley   +1 more source

High Linearity and Symmetry Ferroelectric Artificial Neuromorphic Devices Based on Ultrathin Indium‐Tin‐Oxide Channels

open access: yesAdvanced Electronic Materials, EarlyView.
Ultrathin ITO and ferroelectric HZO are used to fabricate synaptic transistors. The device has a great on/off ratio ≈108 with a memory window of 1.73 V, successfully simulates the characteristics of the human brain, and achieves good linearity of 0.45 for potential and 0.73 for depression and low asymmetry of 0.89.
Siwei Wang   +8 more
wiley   +1 more source

Engineering band structures of two-dimensional materials with remote moiré ferroelectricity. [PDF]

open access: yesNat Commun
Ding J   +11 more
europepmc   +1 more source

Memory Manufacture Under Microgravity (MMuM): In‐Space Manufactured ZnO‐Based Resistive Random Access Memory for Emerging Computing Application

open access: yesAdvanced Electronic Materials, EarlyView.
This paper presented ZnO‐based crossbar RRAMs by electrohydrodynamic (EHD) printing technology under in‐space manufacture environment as microgravity (µG). The crossbar structures of Ag/ZnO/Ag are fabricated under earth with in‐space microgravity. With the microgravity effect, a significant electroforming forming voltage reduced 89.3% as a storage ...
Yujian Huang   +8 more
wiley   +1 more source

Ambient Moisture-Induced Self Alignment of Polarization in Ferroelectric Hafnia. [PDF]

open access: yesAdv Sci (Weinh)
Wei LQ   +9 more
europepmc   +1 more source

Current Flow Mapping in Conducting Ferroelectric Domain Walls Using Scanning NV‐Magnetometry

open access: yesAdvanced Electronic Materials, EarlyView.
Domain walls in ferroelectrics are mobile, electrically conductive interfaces that hold promise as functional elements in next‐generation, “reconfigurable” electronics. They often form complex networks, making transport characterization challenging. Current densities are visualised in conducting ferroelectric domain wall devices directly by imaging the
Conor J. McCluskey   +3 more
wiley   +1 more source

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