Results 311 to 320 of about 204,595 (365)

Ferroelectric Compensation Effect of the Hard Electrode for the HfO2‐ZrO2 Superlattice Films at the Low‐Annealing Temperature

Advanced Electronic Materials, EarlyView.
The hafnia superlattice structure ferroelectric capacitors are clamped by electrodes with various hardness and annealed at 450 to 600 °C. It is found that the out‐of‐plane compressive stress caused by electrode hardness can offset the in‐plane tensile stress loss in hafnium‐based superlattice ferroelectric devices when the annealing temperature ...
Chuqian Zhu, Na Bai, Yufan Wang, Huajun Sun, Lanqing Zou, Yunhui Yi, Jiyang Xu, Jiawang Ren, Junming Zhang, Sheng Hu, Kanhao Xue, Lei Ye, Weiming Cheng, Qiang He, Xiangshui Miao   +14 more
wiley   +1 more source

On the giant deformation and ferroelectricity of guanidinium nitrate. [PDF]

Nat Commun
Szafrański M, Katrusiak A.
europepmc   +1 more source

All‐Electric Mimicking of Synaptic Plasticity Based on the Noncollinear Antiferromagnetic Device

Advanced Electronic Materials, EarlyView.
Mn3Pt was chosen as spin source with a simple face‐centered cubic structure and a noncollinear antiferromagnetic configuration to build a spin‐orbit torque (SOT) device that mimics all‐electric synaptic behavior for developing neuromorphic computing.
Cuimei Cao, Wei Duan, Xiaoyu Feng, Yan Xu, Yihan Wang, Zhenzhong Yang, Qingfeng Zhan, Long You   +7 more
wiley   +1 more source

Probing Hf_0.5Zr_0.5O₂ Ferroelectricity: Neutron Reflectivity Reveals Critical Interface Effects. [PDF]

ACS Appl Mater Interfaces
Chen HY, Mo CL, Shyue JJ, Huang TY, Chen MJ.   +4 more
europepmc   +1 more source

Exploring the Bioengineering Potential of CoFe2O4‐BaTiO3 Nanoparticles: A Dive into the Magnetoelectric Coefficient

Advanced Electronic Materials, EarlyView.
Magnetoelectric (ME) core–shell nanoparticles, particularly made of CoFe2O4‐BaTiO3, are emerging as promising materials for bioengineering applications. This perspective explores the evolution of measurement methodologies for their ME coefficient (α), highlighting variations in reported values.
Martina Lenzuni, Alessandra Marrella, Emma Chiaramello, Giulia Suarato, Paolo Ravazzani   +4 more
wiley   +1 more source

Boosting Inversion Symmetry Breaking in Epitaxial Tetragonal ZrO₂ Via Atomic Layer Deposition. [PDF]

Nano Lett
Cho JW, Kim D, Choi IH, Pushpakumara RAM, Kang S, Lee TY, An C, Lee SH, Lee JS, Park J, Chae SC.   +10 more
europepmc   +1 more source

Quantum Transport in SnTe Nanowire Devices

Advanced Electronic Materials, EarlyView.
A variety of quantum transport experiments are observed in SnTe nanowire devices and attributed to microscopic differences in the fabrication. Three categories can be distinguished: semiconducting behavior, partial superconductivity and Fabry‐Pérot oscillations.
Femke J. Witmans, Mathijs G. C. Mientjes, Maarten J. G. Kamphuis, Vince van de Sande, Xin Guan, Hans Bolten, Marcel A. Verheijen, Chuan Li, Joost Ridderbos, Erik P.A.M. Bakkers, Alexander Brinkman, Floris A. Zwanenburg   +11 more
wiley   +1 more source

Mechanically deformable organic ferroelectric crystal with plasticity optimized by fluorination. [PDF]

Nat Commun
Huang PZ, Liu Z, Ye LK, Ni HF, Luo JQ, Teri G, Jia QQ, Zhuang B, Wang CF, Zhang ZX, Zhang Y, Fu DW.   +11 more
europepmc   +1 more source

Bifunctional Memristive Behavior of a Dual‐Layer Structure Depending on the Configuration of Charge Transport

Advanced Electronic Materials, EarlyView.
This paper presents a dual‐layer device integrating neuronal and synaptic functions using a conductive bottom layer (MXenes or rGO) and a gallium oxide top layer. The device demonstrates distinct switching behaviors—volatile (neuronal) and gradual (synaptic)—depending on the configuration.
Suji Ha, YoungJu Park, Chanjin Lim, Eunyeong Yang, Taegil Kim, Seon Joon Kim, Junwoo Park   +6 more
wiley   +1 more source

Phase-pure ferroelectric quantum wells with tunable photoluminescence for multi-state optoelectronic applications. [PDF]

Light Sci Appl
Sun R, Jia Y, Lai B, Shi Z, Liu M, Yu W, Jiang K, Zhang S, Lv S, Chen Y, Sun X, Li D.   +11 more
europepmc   +1 more source