Results 31 to 40 of about 5,019 (211)
2D Multifunctional Spin‐Orbit Coupled Dirac Nodal Line Materials
A total of 473 nonmagnetic and antiferromagnetic 2D spin‐orbit coupled Dirac nodal line materials are screened, spanning 5 layer groups and 12 magnetic space groups. Furthermore, it integrates their topological properties with electride, multiferroic, and magnetic characteristics, revealing unique systems with expanded functionalities and promising ...
Weizhen Meng +7 more
wiley +1 more source
Electric control of magnetic tunnel junctions offers a path to drastically reduce the energy requirements of the device. Electric field control of magnetization can be realized in a multitude of ways. These mechanisms can be integrated into existing spintronic devices to further reduce the operational energy.
Will Echtenkamp +7 more
wiley +1 more source
Piezoelectric response of disordered lead-based relaxor ferroelectrics
Lead-based relaxor ferroelectrics are known for their large piezoelectric response, but the relation between the response and the nanoscale structure of these materials is still under debate. In this Perspective, the microscopic implications of the polar
Tadej Rojac
doaj +1 more source
Hybrid nanogenerator (HNG) based on a zinc‐metal‐organic framework‐loaded fibrous film integrated with a hierarchically modified nylon film having micropatterns and micropores is fabricated via an electrospinning technique, and its electrical properties are optimized. The HNGs are incorporated into wearable garments and automobile systems for practical
Sontyana Adonijah Graham +6 more
wiley +1 more source
Over the past years, the application potential of ferroelectric nanomaterials with unique physical properties for modern electronics is highlighted to a large extent.
Tai‐Ting Sha +9 more
doaj +1 more source
Chemically driven energetic molecular ferroelectrics
An interest arises if energetic molecules and molecular ferroelectrics can be integrated together to obtain a chemically driven electricity conversion.
Yong Hu +7 more
doaj +1 more source
This study demonstrated single‐crystalline PbTiO3‐based memristors with atomically sharp interfaces, well‐ordered lattices, and minimal lattice mismatch. The devices exhibited an ON/OFF ratio exceeding 105, high stability, and rich resistance‐state modulation.
Haining Li +7 more
wiley +1 more source
Electrostatics of depolarization field E d in relation to the polarization is studied. In particular, the value of permittivity for E d (ε d ) in prototypical situations of ferroelectrics, including Mehta formula, is examined by ab initio calculations ...
Yukio Watanabe
doaj +1 more source
Steep‐Switching Memory FET for Noise‐Resistant Reservoir Computing System
We demonstrate the steep‐switching memory FET with CuInP2S6/h‐BN/α‐In2Se3 heterostructure for application in noise‐resistant reservoir computing systems. The proposed device achieves steep switching characteristics (SSPGM = 19 mV/dec and SSERS = 23 mV/dec) through stabilization between CuInP2S6 and h‐BN.
Seongkweon Kang +6 more
wiley +1 more source
Molecular ferroelectrics are attracting great interest due to their light weight, mechanical flexibility, low cost, ease of processing and environmental friendliness.
Yu-An Xiong +9 more
doaj +1 more source

