Results 41 to 50 of about 191,244 (266)

Magnetoelectric Effect in Amorphous Ferromagnetic FeCoSiB/Langatate Monolithic Heterostructure for Magnetic Field Sensing

Sensors, 2023
This paper investigates the possibilities of creating magnetic field sensors using the direct magnetoelectric (ME) effect in a monolithic heterostructure of amorphous ferromagnetic material/langatate.
L. Y. Fetisov, M. V. Dzhaparidze, D. V. Savelev, D. A. Burdin, A. V. Turutin, V. V. Kuts, F. O. Milovich, A. A. Temirov, Y. N. Parkhomenko, Y. K. Fetisov   +9 more
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Electroresistance and electro-optic effects in molecular ferroelectrics

APL Materials, 2020
Molecular ferroelectrics are often considered as an alternative to inorganic ferroelectrics due to their structural diversity, optical transparency, and low-temperature solution processing.
Yong Hu, Shenqiang Ren
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Deciphering the atomic-scale structural origin for large dynamic electromechanical response in lead-free Bi0.5Na0.5TiO3-based relaxor ferroelectrics

Nature Communications, 2022
For relaxor ferroelectrics, correlating their properties and local structures is challenging. Here, the authors correlate the atomic-scale structure and the large dynamic electromechanical property in Bi0.5Na0.5TiO3-based relaxor ferroelectrics.
Jie Yin, Xiaoming Shi, Hong Tao, Zhi Tan, Xiang Lv, Xiangdong Ding, Jun Sun, Yang Zhang, Xingmin Zhang, Kui Yao, Jianguo Zhu, Houbing Huang, Haijun Wu, Shujun Zhang, Jiagang Wu   +14 more
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Ferroelectricity in Spiral Magnets [PDF]

Physical Review Letters, 2006
4 pages, 4 ...
Maxim Mostovoy, Maxim Mostovoy
openaire   +4 more sources

Releasing chemical energy in spatially programmed ferroelectrics

Nature Communications, 2022
Chemical energy ferroelectrics show limited control of the energy release rate. Here, the authors design spatially programmed energetic ferroelectrics with controlled energy release rates from machine learning-directed additive manufacturing and ice ...
Yong Hu, Jennifer L. Gottfried, Rose Pesce-Rodriguez, Chi-Chin Wu, Scott D. Walck, Zhiyu Liu, Sangeeth Balakrishnan, Scott Broderick, Zipeng Guo, Qiang Zhang, Lu An, Revant Adlakha, Mostafa Nouh, Chi Zhou, Peter W. Chung, Shenqiang Ren   +15 more
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Above Room Temperature Reversible Phase Transition Induces Distinct Dielectric and Nonlinear Optical Switching Response Behavior in Crown-Ether-Based Supramolecular Clathrate

Crystals, 2019
Stimuli-responsive materials with coexisting nonlinear optical (NLO) and dielectric properties are technologically important, which enable simultaneous conversion of optoelectronic properties between different states under external stimuli. By rationally
Jing Jing, Fan Jiang, Yan-Li Wei, Chao Shi, Heng-Yun Ye, Yi Zhang   +5 more
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Ferroelectricity at ferroelectric domain walls

, 2013
10 pages with 6 figures embedded. Includes Suppl. Mats.
Wojdel, Jacek C., Iniguez, Jorge
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Atomic scale symmetry and polar nanoclusters in the paraelectric phase of ferroelectric materials

Nature Communications, 2021
The existence and atomic-level structure of the hypothetical polar nanoclusters above the Curie temperature is one of the oldest open questions in the physics of ferroelectrics.
Andreja Bencan, Emad Oveisi, Sina Hashemizadeh, Vignaswaran K. Veerapandiyan, Takuya Hoshina, Tadej Rojac, Marco Deluca, Goran Drazic, Dragan Damjanovic   +8 more
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Plasmonic Ferroelectric Modulators [PDF]

Journal of Lightwave Technology, 2019
Integrated ferroelectric plasmonic modulators featuring large bandwidths, broad optical operation range, resilience to high temperature and ultracompact footprint are introduced. Measurements show a modulation bandwidth of 70 GHz and a temperature stability up to 250 C.
Andreas Messner, Felix Eltes, Ping Ma, Stefan Abel, Benedikt Baeuerle, Arne Josten, Wolfgang Heni, Daniele Caimi, Jean Fompeyrine, Juerg Leuthold   +9 more
openaire   +3 more sources

Enhanced electrodynamic gating in two-dimensional transistors using ferroelectric capping

Nano Express, 2023
Two-dimensional (2D) materials such as semiconductors and ferroelectrics are promising for future energy-efficient logic devices because of their extraordinary electronic properties at atomic thickness.
Hemendra Nath Jaiswal, Maomao Liu, Simran Shahi, Anthony Cabanillas, Sichen Wei, Yu Fu, Anindita Chakravarty, Asma Ahmed, Joel Muhigirwa, Fei Yao, Huamin Li   +10 more
doaj   +1 more source