Results 101 to 110 of about 2,694,822 (232)

2D Nonlayered Materials for Transistor Application

Advanced Physics Research, EarlyView.
2D nonlayered materials possess a vast material library and have comprehensive applications in transistors. However, at this stage, they hold great potential, but this potential has seen limited exploration compared to 2D layered materials. This review provides statistics on the nonlayered material library, CVD synthesis and characterization, advances ...
Yongqi Dai, Yunhai Xiong, Farhan Ahmad, Xiang Chen   +3 more
wiley   +1 more source

MXene‐Based Flexible Memory and Neuromorphic Devices

Small, EarlyView.
The unique two‐dimensional structure, excellent electrical conductivity, and diverse surface groups of MXenes have garnered significant attention. Coupled with their exceptional flexibility, MXene‐based devices hold immense potential for flexible memory and neuromorphic systems. This review comprehensively discusses the fundamentals of flexible devices,
Yan Li, Guanglong Ding, Yongbiao Zhai, Ziyu Lv, Yan Yan, Shuangmei Xue, Kui Zhou, Meng Zhang, Yutong Zhang, Qi‐Jun Sun, Yi Liu, Vellaisamy A. L. Roy, Ye Zhou, Su‐Ting Han   +13 more
wiley   +1 more source

Epitaxy of Emerging Materials and Advanced Heterostructures for Microelectronics and Quantum Sciences

Small Methods, EarlyView.
Epitaxy is a key enabler of next‐generation nano/microelectronics and solid‐state quantum information systems. Demands on epitaxy of emerging materials including 2D materials and quantum materials are rapidly growing to realize various proposed applications.
Yeonjoo Lee, Soo Ho Choi, Hyunseok Kim, Jinkyoung Yoo   +3 more
wiley   +1 more source

Translation domains in multiferroics [PDF]

arXiv, 2010
Translation domains differing in the phase but not in the orientation of the corresponding order parameter are resolved in two types of multiferroics. Hexagonal (h-) YMnO$_3$ is a split-order-parameter multiferroic in which commensurate ferroelectric translation domains are resolved by piezoresponse force microscopy whereas MnWO$_4$ is a joint-order ...
arxiv  

Conduction of topologically-protected charged ferroelectric domain walls

, 2011
We report on the observation of nanoscale conduction at ferroelectric domain walls in hexagonal HoMnO3 protected by the topology of multiferroic vortices using in situ conductive atomic force microscopy, piezoresponse force microscopy, and kelvin-probe ...
J. R. Guest, M. E. Lines, N. Lee, P. M. Chaikin, S.-W. Cheong, Weida Wu, Y. Horibe   +6 more
core   +1 more source

Emergent Epitaxial Configuration of Pr3IrO7 Domains via YSZ (111) Substrate

Small Structures, EarlyView.
Epitaxial growth of Pr3IrO7, with its highly anisotropic structure, on a (111)‐oriented Yttrium‐stabilized ZrO2 (YSZ) substrate leads to distinctive domain configurations. This domain arrangement gives rise to spin‐glass behavior, markedly different from bulk materials, highlighting the impact of reduced dimensionality and substrate interaction.
Gahee Noh, Lu Guo, Pratap Pal, Neil Campbell, Mark Steven Rzchowski, Chang‐Beom Eom, Si‐Young Choi   +6 more
wiley   +1 more source

Thermal analysis of base metal electrode multilayer ceramic capacitors

Journal of the American Ceramic Society, EarlyView.
Abstract Multilayer ceramic capacitors (MLCCs) are a mainstay in modern electronics; they are utilized in consumer electronics, medical equipment, military devices, and electric vehicles, among others. As their range of usage increases, it is crucial to design MLCCs to withstand high‐driving electric fields and high‐temperature environments.
Kyuhwe Kang, Daniel C. Shoemaker, Pedram Yousefian, James Cockburn, Angela Ellmore, Michael T. Lanagan, Clive Randall, Susan Trolier‐McKinstry, Sukwon Choi   +8 more
wiley   +1 more source

Room Temperature Dy Spin‐Flop Switching in Strained DyFeO3 Thin Films

Advanced Materials Interfaces, Volume 12, Issue 11, June 9, 2025.
The two‐spin system DyFeO3, a canted bulk antiferromagnet with a spin reorientation between 40 and 50 K is epitaxially grown as thin film with compressive in‐plane strain. As a result, the spin reorientation increased by more than 20 K and a sign‐dependent linear M(T) dependence between 100 and 400 K is measured due to an induced alignment of Dy spins.
Banani Biswas, Federico Stramaglia, Ekatarina V. Pomjakushina, Thomas Lippert, Carlos A. F. Vaz, Christof W. Schneider   +5 more
wiley   +1 more source

Electrostatic topology of ferroelectric domains in YMnO$_3$

, 2010
Trimerization-polarization domains in ferroelectric hexagonal YMnO$_3$ were resolved in all three spatial dimensions by piezoresponse force microscopy. Their topology is dominated by electrostatic effects with a range of 100 unit cells and reflects the ...
Elisabeth Soergel, Manfred Fiebig, Oleinik A. S., Tobias Jungk, Ákos Hoffmann   +4 more
core   +1 more source

Subsurface State Bilayer in Tetragonal Ferroelectric BaTiO3

Advanced Materials Interfaces, Volume 12, Issue 11, June 9, 2025.
The subsurface Ba2+disorder, reveals the pairs of O vacancies (VO++$V_O^{ + + }$ s) and small polarons (SPe‐SPe−$SP_e^ - $ s) (Figure a–b), with the charge balance, as the following: Ti3++[VO+++SPe−]pair↔Ti4+${{T}_i}^{3 + } + {{[V_O^{ + + } + SP_e^ - ]}_{pair}} \leftrightarrow T_i^{4 + }$ which is consistent with observed low‐energy electron ...
Junhao Chen, Xin Su, Tao Yuan, Wenbin Tang, Shicheng Ding, Yan Shi, Fangming Li, Kai Chen, Yang Yu, Hongchao Zhang, Siyuan Zhu, Guoliang Yuan, Jian Lu   +12 more
wiley   +1 more source