Results 161 to 170 of about 301,927 (372)
Modulating Oxide‐Based Quantum Materials by Ion Implantation
Advanced Functional Materials, EarlyView.This review highlights how ion implantation, a well developed chip‐technology, enables targeted modulation of oxide‐based quantum materials. This includes tuning of metal‐insulator transitions, magnetism, and superconductivity through selective doping, defect creation, and induced lattice strain. Abstract Ion implantation has emerged as a powerful tool
Andreas Herklotz +2 more
wiley +1 more source
Advanced Functional Materials, EarlyView.This work demonstrates ultrafast, field‐free spin–orbit torque (SOT) switching using a PtTe2/WTe2/CoFeB multilayer, achieving sub‐nanosecond magnetization reversal with record‐low energy consumption. The PtTe2/WTe2 bilayer generates an intrinsic out‐of‐plane spin current, enabling deterministic switching without external fields.
Qu Yang +7 more
wiley +1 more source
Optoelectronic Devices for In‐Sensor Computing
Advanced Materials, EarlyView.The raw data obtained directly from sensors in the noisy analogue domain is often unstructured, which lacks a predefined format or organization and does not conform to a specific data model. Optoelectronic devices for in‐sensor visual processing can integrate perception, memory, and processing functions in the same physical units, which can compress ...
Qinqi Ren +7 more
wiley +1 more source
Single Crystal Anisotropy and Magnetostriction Constants of Several Ferromagnetic Materials Including Alloys of NiFe, SiFe, AlFe, CoNi, and CoFe [PDF]
, 1959 R. C. Hall
openalex +1 more source
Advanced Materials, EarlyView.Single‐layer magnetization switching with a small critical current density of ≈106 A cm−2 is demonstrated. The strong intrinsic spin Hall effect, causing the switching, is induced by the synergy of the inherent spin‐orbit coupling and the spontaneous oxygen octahedral rotation in SrRuO3.The findings highlight the immense potential for realizing ...
Hiroto Horiuchi +11 more
wiley +1 more source
The structure induced magnetic susceptibility peak to dip transition in the MoSe2−xTex
Results in PhysicsThe temperature independent magnetic susceptibility peak and dip were observed in the MoSe2−xTex. The magnetic susceptibility peak accompanies with ferromagnetism which originates from two electrons spin-parallelly stay at 4d orbit in the 1T@2H structure.
Shiu-Ming Huang +4 more
doaj
Closure to “Discussion of ‘The Origin of Damping in High-Strength Ferromagnetic Alloys’” (1953, ASME J. Appl. Mech., 20, pp. 574–575) [PDF]
, 1953 A. W. Cochardt
openalex +1 more source
Large Spin‐Orbit Torque with Multi‐Directional Spin Components in Ni4W
Advanced Materials, EarlyView.Ni4W is theoretically proposed and experimentally verified as a promising unconventional spin‐orbit torque (SOT) material for generating multi‐directional spins. Epitaxial Ni4W thin films with outstanding crystallinity are grown by magnetron sputtering.
Yifei Yang +17 more
wiley +1 more source