Results 231 to 240 of about 321,049 (388)

The effective Curie-Weiss constant of ferromagnetic metals and alloys [PDF]

, 1963
Peter A. Rhodes, E.P. Wohlfarth
openalex   +1 more source

Linear Weight Update Synaptic Responses in Ferrimagnetic Neuromorphic Devices

Advanced Electronic Materials, EarlyView.
The state‐of‐the‐art ferrimagnetic synapses are suffering poor linearity, hindering the improvement of the performance of the artificial neural network (ANN). It is experimentally and theoretically demonstrated adjusting the current distribution through engineering the voltage probe width could enhance the linearity of the synapses, which could achieve
Junwei Zeng, Binxuan Zhao, Yakun Liu, Teng Xu, Wanjun Jiang, Liang Fang, Jiahao Liu   +6 more
wiley   +1 more source

Existence of a phase-transition in a one-dimensional Ising ferromagnet [PDF]

, 1969
Freeman J. Dyson
openalex   +1 more source

Metal‐Semiconductor Phase Transition in Multilayer VSe2 for Broadband Photodetector with High Sensitivity

Advanced Electronic Materials, EarlyView.
The metal‐semiconductor phase transition (1T to 2H) in VSe2 is achieved by a thermal annealing process. The 2H‐VSe2 photodetector exhibits low dark current, broadband spectral range, and high sensitivity with responsivity (R) and detectivity (D*) up to 75.26 A W−1 and 1.45 × 1010 Jones, respectively, at optical communication band with a wavelength of ...
Yujue Yang, Mengjia Xia, Qixiao Zhao, Zhidong Pan, Huafeng Dong, Xin Zhang, Fugen Wu, Juehan Yang, Nengjie Huo   +8 more
wiley   +1 more source

Magnetotransport evidence for the coexistence of two-dimensional superconductivity and ferromagnetism at (111)-oriented a-CaZrO₃/KTaO₃ interfaces. [PDF]

Nat Commun
Zhang H, Xiao Y, Gao Q, Wu N, Zhou S, Wang Y, Wang M, Tian D, Chen L, Qi W, Zheng D, Zhang J, Han F, Yang H, Liu B, Chen Y, Hu F, Shen B, Sun J, Zhao W, Zhang J.   +20 more
europepmc   +1 more source

Ferroelectric Hafnium Oxide: A Potential Game‐Changer for Nanoelectronic Devices and Systems

Advanced Electronic Materials, EarlyView.
Devices based on ferroelectric hafnium oxide have spurred interest in a wide range of nanoelectronic applications. This review focuses on the advantages and challenges of these devices, including non‐volatile memories, neuromorphic devices, sensors, actuators, and RF devices.
David Lehninger, Franz Müller, Yannick Raffel, Shouzhuo Yang, Markus Neuber, Sukhrob Abdulazhanov, Thomas Kämpfe, Konrad Seidel, Maximilian Lederer   +8 more
wiley   +1 more source

Young's Modulus of Elasticity and Its Variation with Magnetization in Ferromagnetic Nickel-Copper Alloys

, 1942
Mikio Yamamoto
openalex   +2 more sources

Recent Developments in Ferromagnetic Resonance at High Power Levels [PDF]

, 1960
Ernst Schlömann, J. J. Green, U. Milano
openalex   +1 more source

Advances in Gallium Oxide: Properties, Applications, and Future Prospects

Advanced Electronic Materials, EarlyView.
This review discusses the properties and fabrication methodologies of gallium oxide. The discussion revolved around papers that are recently published and provided an overview of the current research status on gallium oxide. The discussion focused on defects, doping, and the performance of the fabricated photodetectors, as reported in the literature ...
Swapnodoot Ganguly, Krishna Nama Manjunatha, Shashi Paul   +2 more
wiley   +1 more source

Robust ferromagnetism in wafer-scale Fe₃GaTe₂ above room-temperature. [PDF]

Nat Commun
Wu S, He Z, Gu M, Ren L, Li J, Deng B, Wang D, Guo X, Li W, Chen M, Chen Y, Meng M, Ye Q, Shen B, Chen X, Guo J, Xing G, Sou IK, Li S.   +18 more
europepmc   +1 more source