Results 261 to 270 of about 19,507 (290)
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Romania, 1899
Thomas A. Anç. franç. feis = fesis, etc. In: Romania, tome 28 n°109, 1899. pp. 118-119.
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Thomas A. Anç. franç. feis = fesis, etc. In: Romania, tome 28 n°109, 1899. pp. 118-119.
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Journal of Materials Science: Materials in Electronics, 2021
Jinghui Wang, Z. Xue, S. Song, Haibo Sun
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Jinghui Wang, Z. Xue, S. Song, Haibo Sun
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Journal of Materials Science: Materials in Electronics, 2021
Jinghui Wang +3 more
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Jinghui Wang +3 more
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The improved magnetic properties of FeSi powders cores composed with different size particles
Journal of Materials Science: Materials in Electronics, 2021Shuoguo Li, K. Peng, L. Zou
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Preparation of Fe_3Si and FeSi intermetallic compounds from copper slag by electrochemical method
Journal of Iron and Steel Research International, 2022H. Li, Chaochao Xue, Yu Yang, J. Liang
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1987
Transition-metal monosilicides MnSi and FeSi show a variety of interesting magnetic and transport properties. They both crystallize in a cubic structure (space group P213) in which magnetic atoms are located at displaced face centered positions. MnSi is a spiral ferromagnet with the Curie temperature Tc at 29K.
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Transition-metal monosilicides MnSi and FeSi show a variety of interesting magnetic and transport properties. They both crystallize in a cubic structure (space group P213) in which magnetic atoms are located at displaced face centered positions. MnSi is a spiral ferromagnet with the Curie temperature Tc at 29K.
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FORMATION OF EPITAXIAL GAMMA-FESI(2) AND BETA-FESI(2) LAYERS ON (111) SI
1994Polycrystalline beta-FeSi2 layers, 85 nm thick, thermally grown on (111) Si substrates have been irradiated by 25 ns ruby-laser pulses in the energy density range 0.4-1.2 J/cm2. Formation of the epitaxial metastable gamma-FeSi2 has been observed in a selected energy density range. The stability of gamma-FeSi2 has been tested by annealing in the 300-800-
GRIMALDI, Maria Grazia +5 more
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Journal of Materials Science: Materials in Electronics, 2021
J. Ni, S. Zhu, S. Feng, X. Kan, X. Liu
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J. Ni, S. Zhu, S. Feng, X. Kan, X. Liu
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