Results 141 to 150 of about 427,015 (336)

Nanomaterials-based Field Effect Transistor biosensor for cancer therapy

open access: yesNext Nanotechnology
Biosensors made of nanomaterials play a prominent part in diagnostic applications in the biomedical domain. The peculiar characteristics of nanomaterials including quantum effects, self-assembly, and larger surface area make them an irresistible choice ...
Silpa Sasikumar   +3 more
doaj   +1 more source

Global Computing II. Terms of reference for the FP6-EU-FET call.

open access: yes, 2003
The European Commission has decided to continue and develop its FET “Global Computing,” and will shortly announce the opening of “Global Computing II.” The call is expected in May 2004, with application deadlines in September, and expected start date for
Sassone, V.
core  

Integration of Freestanding High‐k Oxide Membranes for 2D Ferroelectric Field‐Effect Transistors

open access: yesAdvanced Science, EarlyView.
This work introduces a defect‐tolerant integration strategy that enables freestanding BaTiO3 membranes to form low‐leakage top‐gate junctions with MoS2. The resulting FeFETs exhibit a record 0.22 V nm−1 memory window, ultrahigh‐k response, and near‐ideal subthreshold swings.
Zejing Guo   +16 more
wiley   +1 more source

Optimizing frozen embryo transfer for low-quality embryos: Comparing outcomes in natural cycle and hormone therapy cycle - A retrospective analysis

open access: yesTaiwanese Journal of Obstetrics & Gynecology
Objective: The aim of this study is to analyze potential disparities in clinical outcomes in two distinct regimens of frozen embryo transfer (FET): the natural cycle (NC-FET) and hormone therapy cycle (HT-FET), within the initial FET cycle of patients ...
Tsun-Wen Hsiao   +6 more
doaj   +1 more source

Single‐Crystal PZT‐Driven Organic Piezo‐Phototronic Adaptive Transistors Toward Advanced Spatiotemporal Visual Computing

open access: yesAdvanced Science, EarlyView.
Here, we propose a single‐crystal PZT‐based piezo‐phototronic organic adaptive memory transistor (OAMT), achieving a record memory window capacity factor (γ) of 0.87 at a low SS of 200 mV/decade via efficient multi‐field control. The device achieves a high recognition accuracy ∼ 90% in neuromorphic simulations, demonstrates robust fault tolerance under
Chenhao Xu   +8 more
wiley   +1 more source

Thermal feedback in Si JFETs operating at low temperatures [PDF]

open access: yes
Thermal feedback theory for silicon junction FET operating at low ...
Churchill, M. J., Lauritzen, P. O.
core   +1 more source

XOR‐Logic Phase Coding Programmable Metasurface for Low Power‐Consumption Systems

open access: yesAdvanced Science, EarlyView.
By leveraging XOR logic, the biasing‐network complexity of 2D programmable metasurfaces is reduced from m×n to m+n through efficient row‐column control. This enables versatile functions including beam deflection and beamforming, facilitating applications in wireless communications and beyond.
Ruichao Zhu   +10 more
wiley   +1 more source

Oxide Semiconductor Thin‐Film Transistors for Low‐Power Electronics

open access: yesAdvanced Science, EarlyView.
This review explores the progress of oxide semiconductor thin‐film transistors in low‐power electronics. It illustrates the inherent material advantages of oxide semiconductor, which enable it to meet the low‐power requirements. It also discusses current strategies for reducing power consumption, including interface and structure engineering.
Shuhui Ren   +8 more
wiley   +1 more source

Beyond Cocrystals: Hierarchical Functional Assemblies via Noncovalent Synthesis

open access: yesAdvanced Science, EarlyView.
Non‐covalent interactions (NCIs) drive the formation of organic cocrystals with diverse structures and tunable optoelectronic properties. This review explores the essential factors governing these properties, highlighting how the sequential nucleation of cocrystals leads to the self‐assembly of organic hierarchical structures (OHSs).
Ya‐Nan Zhu   +6 more
wiley   +1 more source

Highly Sensitive Heterojunction‐Gated Phototransistor With Detection Wavelength Ranged From 350 to 1700 Nm

open access: yesAdvanced Science, EarlyView.
This work demonstrates a heterojunction‐gated infrared phototransistor for broadband detection from 350 to 1700 nm. By suppressing defect states on nonpolar (100) facets of large PbS quantum dots via hybrid ligand passivation, the device achieves a room‐temperature detectivity of 5.7 × 1013 Jones at 1650 nm.
Hongkun Duan   +14 more
wiley   +1 more source

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