Results 151 to 160 of about 427,015 (336)
Advanced Science, EarlyView.ABSTRACT Strain is a proven technique for modifying the bandgap and enhancing carrier mobility in 2D materials. Most current strain engineering techniques rely on the post‐growth transfer of these atomically thin materials from growth substrates to target surfaces, limiting their integration into nanoelectronics.
Berke Erbas +8 more
wiley +1 more source
Discover ElectronicsThe development of emerging technologies in satellite communications, military applications, scientific research, short-range wireless networks, 5G, and mm-wave machine-to-machine communications always demands ultra-high speed transmission capabilities ...
Atul Varshney
doaj +1 more source
Consequences of negative differential electron mobility in insulated gate field effect transistors
, 2006 We study the consequences of negative differential electron mobility in insulated gate field effect transistors (FETS) using the field model. We show that, in contrast to the case of the monotonic velocity saturation model, the field distributions in a ...
Furman, A. S.
core
Advanced Science, EarlyView.The restrained side‐chain accessibility and versatility of GNRs extremely impede their multifunctionality, solution processability, and numerous solution‐based applications. We report herein a robust liquid‐phase bottom‐up synthesis approach for high‐efficiency preparation of side‐chain sequence‐regulated functional GNRs.
Baiyang Chen +8 more
wiley +1 more source
Graph-contrast ransomware detection (GCRD) with advanced feature selection and deep learning
Discover ComputingRansomware attacks represent a more potent and upcoming cybersecurity threat and traditional detection strategies have been ineffective against new and polymorphic ransomware variants.
Suneeta Satpathy, Pratik Kumar Swain
doaj +1 more source
Advanced Science, EarlyView.A flexible freestanding HfO2‐based ferroelectric membrane is achieved via a water‐assisted exfoliation technique using a Sr4Al2O₇ sacrificial layer. The BaTiO3/Hf0.5Zr0.5O2/BaTiO3 heterostructure maintains robust ferroelectricity and exhibits reliable synaptic plasticity.
Han Zhang +13 more
wiley +1 more source
Epitaxial process for development for monolithic complementary MOS-FET structure with oxide barrier isolation Final report, 15 Mar. - 15 Sep. 1965 [PDF]
Oxide isolated islands of N and P type silicon semiconductors by epitaxial deposition and etching for complimentary MOS-FET ...
Skouson, G. W.
core +1 more source
Gate Enhancing Charge‐Spin Conversion in Organic Chiral Field Effect Transistors
Advanced Science, EarlyView.Room‐temperature organic chiral multiferroic field effect transistors are demonstrated, enabling bidirectional control between spin and charge. Specifically, spin polarization affects the ferroelectric polarization, and ferroelectric polarization, in turn, can modulate spin polarization and spin‐dependent transport.
Shilin Li +4 more
wiley +1 more source
2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC), 2018 Jaehyun Lee +8 more
openaire +1 more source
Advanced Science, EarlyView.The noncentrosymmetric trilayer rhombohedral‐stacked MoS2 nanoflakes with enhanced sliding ferroelectric properties are synthesized via a molecular sieve‐assisted chemical vapor deposition process. The switchable polarization states, combined with the exceptional light/gate voltage modulated electrical properties of these nanoflakes, enable broadband ...
Qichao Xue +11 more
wiley +1 more source