Results 271 to 280 of about 427,015 (336)

FET-type gas sensors: A review

, 2021
Gas sensing technology is becoming increasingly important in environmental monitoring, medical diagnostics, and industrial safety. Among various types of gas sensors, FET-type gas sensors are increasingly attracting attention due to their miniaturized ...
Seongbin Hong, Meile Wu, Yoonki Hong, Y. Jeong, Gyuweon Jung, Wonjun Shin, Jinwoo Park, Donghee Kim, D. Jang, Jong-Ho Lee   +9 more
semanticscholar   +1 more source

Wafer-Scale Demonstration of MBC-FET and C-FET Arrays Based on Two-Dimensional Semiconductors.

Small, 2022
Two-dimentional semiconductors have shown potential applications in multi-bridge channel field-effect transistors (MBC-FETs) and complementary field-effect transistors (C-FETs) due to their atomic thickness, stackability, and excellent electrical ...
Yingdong Xia, Lingyi Zong, Yu Pan, Xinyu Chen, Lihui Zhou, Yiwen Song, L. Tong, Xiaojiao Guo, Jingyi Ma, Saifei Gou, Zihan Xu, Sheng Dai, D. Zhang, P. Zhou, Y. Ye, W. Bao   +15 more
semanticscholar   +1 more source

A review on two-dimensional materials for chemiresistive- and FET-type gas sensors.

Physical Chemistry, Chemical Physics - PCCP, 2021
Two-dimensional (2D) materials have shown great potential for gas sensing applications due to their large specific surface areas and strong surface activities. In addition to the commonly reported chemiresistive-type gas sensors, field-effect transistor (
Jian Zhang, Lei Liu, Yan Yang, Qingwu Huang, Delong Li, D. Zeng   +5 more
semanticscholar   +1 more source

Benchmarking of Analog/RF Performance of Fin-FET, NW-FET, and NS-FET in the Ultimate Scaling Limit

IEEE Transactions on Electron Devices, 2022
In this work, we examine and benchmark the analog/RF performance metrics of silicon-based multigate devices, such as Fin-FET, gate-all-around nanowire (NW)-FET, and gate-all-around nanosheet (NS)-FET, in the ultimate scaling limit of sub-5-nm technology ...
A. Goel, Akhilesh Rawat, Brajesh Rawat
semanticscholar   +1 more source

Dielectric Modulated Junctionless Biotube FET (DM-JL-BT-FET) Bio-Sensor

IEEE Sensors Journal, 2021
In this manuscript, an analytical model has been demonstrated for Dielectric Modulated Junctionless Biotube FET (DM-JL-BT-FET) as a sensor. The Junctionless Biotube FET based sensor has been compared with Nanowire FET under similar bio-molecule ...
Anubha Goel, Sonam Rewari, S. Verma, S. Deswal, R. Gupta   +4 more
semanticscholar   +1 more source

First Monolithic Integration of 3D Complementary FET (CFET) on 300mm Wafers

2020 IEEE Symposium on VLSI Technology, 2020
We report the first monolithic integration of 3D Complementary Field Effect Transistor (CFET) on 300mm wafers using imec's N14 platform. A monolithic CFET process is cost effective compared to a sequential CFET process.
S. Subramanian, M. Hosseini, T. Chiarella, S. Sarkar, P. Schuddinck, Boon Teik Chan, D. Radisic, G. Mannaert, A. Hikavyy, E. Rosseel, F. Sebaai, A. Peter, T. Hopf, P. Morin, S. Wang, K. Devriendt, D. Batuk, G. Martinez, A. Veloso, E. Litta, S. Baudot, Yong Kong Siew, X. Zhou, B. Briggs, E. Capogreco, J. Hung, R. Koret, A. Spessot, J. Ryckaert, S. Demuynck, N. Horiguchi, J. Boemmels   +31 more
semanticscholar   +1 more source

Optimization of Negative-Capacitance Vertical-Tunnel FET (NCVT-FET)

IEEE Transactions on Electron Devices, 2020
We investigate the GaAs0.51Sb0.49/In0.53Ga0.47As negative-capacitance vertical-tunnel FET (NCVT-FET) to maximize its vertical tunneling over the corner tunneling.
V. Hu, Hung-Han Lin, Yen-Kai Lin, C. Hu
semanticscholar   +1 more source

(Invited) 2D NC-FET, FE-FET and FeS-FET

ECS Meeting Abstracts, 2020
The so-called Boltzmann Tyranny defines the fundamental thermionic limit of the subthreshold slope (SS) of a metal-oxide-semiconductor field-effect transistor (MOSFET) at 60 mV/dec at room temperature and, therefore, precludes the lowering of the supply voltage and the overall power consumption.
openaire   +1 more source

BJT-BJT, FET-BJT, and FET-FET

IEEE Circuits and Devices Magazine, 2004
Cascode amplifiers have three configurations: bipolar junction transistor-bipolar junction transistor (BJT-BJT), field-effect transistor (FET)-BJT, and FET-FET. Although the high-frequency behaviors of these configurations are not the same in practice, in most textbooks only the BJT-BJT configuration is analyzed.
openaire   +1 more source

FET-Based Biosensors

2019
A biosensor can be obtained by a combination of field effect transistor (FET) and biological material, with conductance changed by the biological reaction. Among the ion-sensitive FET (ISFET)-based biosensors, research on ISFET with an immobilized enzyme membrane has been the most developed, with the ion concentration change accompanying the enzymatic ...
T, Kuriyama, J, Kimura
openaire   +2 more sources