Results 291 to 300 of about 427,015 (336)
Some of the next articles are maybe not open access.
2012
Nel contributo viene offerta una rassegna delle versioni italiane di Afanasij Fet eseguite nell'arco temporale 1904-2011, con particolare riferimento ai metri adottati e alle tematiche privilegiate dai traduttori.
openaire +1 more source
Nel contributo viene offerta una rassegna delle versioni italiane di Afanasij Fet eseguite nell'arco temporale 1904-2011, con particolare riferimento ai metri adottati e alle tematiche privilegiate dai traduttori.
openaire +1 more source
Sensor Review, 1994
Reports on the research and development work carried out at Central Research Laboratories Ltd [CRL], concentrating on their physical and chemical sensing techniques and the manufacture of sensors based on silicon field effect transistors [FETs].
openaire +1 more source
Reports on the research and development work carried out at Central Research Laboratories Ltd [CRL], concentrating on their physical and chemical sensing techniques and the manufacture of sensors based on silicon field effect transistors [FETs].
openaire +1 more source
Ferroelectric FET analog synapse for acceleration of deep neural network training
International Electron Devices Meeting, 2017M. Jerry +6 more
semanticscholar +1 more source
European Journal of Nuclear Medicine and Molecular Imaging, 2019
J. Haubold +15 more
semanticscholar +1 more source
J. Haubold +15 more
semanticscholar +1 more source
Novel ferroelectric FET based synapse for neuromorphic systems
Symposium on VLSI Technology, 2017H. Mulaosmanovic +7 more
semanticscholar +1 more source
A transistor device is formed of a continuous linear nanostructure having a source region, a drain region and a channel region between the source and drain regions. The source ( 20 ) and drain ( 26 ) regions are formed of nanowire ania the channel region ( 24 ) is in the form of a nanotube.
Surdeanu, R. +3 more
openaire
Surdeanu, R. +3 more
openaire