Results 61 to 70 of about 427,015 (336)

FET family fusion oncoproteins target the SWI/SNF chromatin remodeling complex

EMBO Reports, 2019
Members of the human FET family of RNA‐binding proteins, comprising FUS, EWSR1, and TAF15, are ubiquitously expressed and engage at several levels of gene regulation.
M. Lindén, C. Thomsen, P. Grundevik, Emma Jonasson, Daniel Andersson, Rikard Runnberg, S. Dolatabadi, C. Vannas, Manuel Luna Santamarίa, H. Fagman, A. Ståhlberg, P. Åman   +11 more
semanticscholar   +1 more source

Intermixing‐Driven Growth of Highly Oriented Indium Phosphide on Black Phosphorus

Advanced Functional Materials, EarlyView.
This study demonstrates controlled intermixing and compound formation at the In/black phosphorus (BP) interface, leading to highly oriented InP formation. Comprehensive structural and electrical analyses reveal tunable bandgap behavior governed by competing BP thinning and charge‐transfer effects, underscoring the critical role of interfacial compound ...
Tae Keun Yun, Min Gyeong Shin, Uje Choi, Jieun Yeon, Jae Joon Kim, Yangjin Lee, Kwanpyo Kim   +6 more
wiley   +1 more source

Top and side gated epitaxial graphene field effect transistors

, 2009
Three types of first generation epitaxial graphene field effect transistors (FET) are presented and their relative merits are discussed. Graphene is epitaxially grown on both the carbon and silicon faces of hexagonal silicon carbide and patterned with ...
Berger, Berger, Bostwick, Dawlaty, Devine, dos Santos, Faugeras, Filleter, Gu, Hass, Hass, Kedzierski, Martin, Miller, Moon, Novoselov, Orlita, Rollings, Ryu, Shon, Sun, Wu, Zhang, Zhang   +23 more
core   +1 more source

Array-based architecture for FET-based, nanoscale electronics [PDF]

, 2003
Advances in our basic scientific understanding at the molecular and atomic level place us on the verge of engineering designer structures with key features at the single nanometer scale.
DeHon, André
core   +1 more source

In Materia Shaping of Randomness with a Standard Complementary Metal‐Oxide‐Semiconductor Transistor for Task‐Adaptive Entropy Generation

Advanced Functional Materials, EarlyView.
This study establishes a materials‐driven framework for entropy generation within standard CMOS technology. By electrically rebalancing gate‐oxide traps and Si‐channel defects in foundry‐fabricated FDSOI transistors, the work realizes in‐materia control of temporal correlation – achieving task adaptive entropy optimization for reinforcement learning ...
Been Kwak, Ryun‐Han Koo, Youngchan Cho, Changhyeon Han, Dongbin Kim, Soi Jeong, Yunho Shin, Joonhyeok Choi, Jiseong Im, Jonghyun Ko, Jong‐Ho Lee, Jangsaeng Kim, Youngho Kang, Wonjun Shin, Daewoong Kwon   +14 more
wiley   +1 more source

A survey of East Palaearctic Hersiliola Thorell, 1870 (Araneae, Hersiliidae), with a description of three new genera

ZooKeys, 2009
Three new genera and eight new species of Hersiliidae are described from the East Palaearctic (Afganistan, Iran, Kazakhstan, Kyrgyzstan, Pakistan, Tajikistan, Turkmenistan, and Uzbekistan).
Yuri Marusik, Victor Fet
doaj   +1 more source

Seven Years of Vitrified Blastocyst Transfers: Comparison of 3 Preparation Protocols at a Single ART Center

Frontiers in Endocrinology, 2020
Introduction: Frozen–thawed embryo transfers (FET) have become a standard practice to increase cumulative pregnancy rates, however, the choice of the best preparation protocol remains a matter of debate.Design: Retrospective analysis of clinical ...
Paolo Emanuele Levi Setti, Federico Cirillo, Raffaella De Cesare, Emanuela Morenghi, Valentina Canevisio, Camilla Ronchetti, Annamaria Baggiani, Antonella Smeraldi, Elena Albani, Pasquale Patrizio, Pasquale Patrizio   +10 more
doaj   +1 more source

Trap‐Assisted Transport and Neuromorphic Plasticity in Lead‐Free 2D Perovskites PEA2SnI4

Advanced Functional Materials, EarlyView.
An artificial retina built from lead‐free layered perovskite (PEA)2SnI4 converts light input into a persistent photocurrent and sums successive flashes over time. Micro/nanocrystals integrated on electrodes act as synapse‐like pixels that perform temporal integration directly in hardware. This in‐sensor preprocessing merges detection and computation on
Ofelia Durante, Valeria Demontis, Jonas Riisnaes Karl, Lam Hoi Tung, Sebastiano De Stefano, Daniela Marongiu, Adolfo Mazzotti, Aditya Bhardwaj, Francesco Mattana, Elisa Pili, Selene Matta, Federico Paolucci, Michele Saba, Andrea Mura, Giovanni Bongiovanni, Monica F Craciun, Saverio Russo, Antonio Di Bartolomeo   +17 more
wiley   +1 more source

Extending ballistic graphene FET lumped element models to diffusive devices [PDF]

, 2012
In this work, a modified, lumped element graphene field effect device model is presented. The model is based on the "Top-of-the-barrier" approach which is usually valid only for ballistic graphene nanotransistors.
Canali, Castro Neto, Chen, D. Mencarelli, Datta, Datta, Dorgan, F. Coccetti, Fang, Fiori, G. Deligeorgis, G. Vincenzi, Jiménez, Khakifirooz, L. Pierantoni, Liang, M. Dragoman, McClure, Mencarelli, Mencarelli, Meric, Mucciolo, Novoselov, Novoselov, Ouyang, Ouyang, R. Plana, Rahman, Reich, Ryzhii, Ryzhii, Ryzhii, Slonczewski, Son, Tan, Thiele, Thiele, Wallace, Wang, Yang   +39 more
core   +3 more sources

Intrinsic Nanopore‐Assisted SnP2S6 Memristors With Ti Ion Dynamics for Compact Logic‐In‐Memory Hardware

Advanced Functional Materials, EarlyView.
Tin hexathiophosphate memristors leverage intrinsic nanopores together with a guided filament formation strategy to regulate titanium ion motion and switching behavior. The devices support reliable nonvolatile memory and reconfigurable logic‐in‐memory, demonstrating 14 Boolean logic functions in a single cell.
Thaw Tint Te Tun, Sanchali Mitra, Hongxi Su, Jiali Huo, Haofei Zheng, Michel Bosman, Yee Sin Ang, Kah‐Wee Ang   +7 more
wiley   +1 more source