Results 61 to 70 of about 125,162 (299)
Laser‐Assisted Phase Engineering of 2D MoS2 for Efficient Solution‐Processed Electronics
Advanced Materials, EarlyView.Here, local laser‐assisted phase transition from solution‐processed phase‐pure 1T′ to 2H MoS2 is shown to critically depend on the irradiation atmosphere. While processing in air leads to damaged insulating regions, inert conditions yield semiconducting 2H domains, enabling direct field‐effect transistor patterning with optimized lateral 1T′‐2H MoS2 ...
Anna Zhuravlova +10 more
wiley +1 more source
Phase Engineering of Nanomaterials (PEN): Evolution, Current Challenges, and Future Opportunities
Advanced Materials, EarlyView.This review summarizes the synthesis, phase transition, advanced characterization spanning ex situ to in situ and operando techniques, and diverse applications of phase engineering of nanomaterials (PEN). It further outlines key challenges and future opportunities, such as phase stability, architecture control, and artificial intelligence (AI)‐driven ...
Ye Chen +7 more
wiley +1 more source
Some features of a current limiter on the field-effect transistor
Технологія та конструювання в електронній апаратурі, 2011 The paper presents researches of dependence of stabilization current from the external resistance connecting the source and the gate of the field-effect transistor in the mode of the current limiter — a two-pole terminal.
A. V. Karimov +6 more
doaj
Circular Layout Hybrid Patch CSRR Loaded Antenna for Sub-6GHz n77, n78, n79 Band Applications with Applications-Interference Eliminations [PDF]
E3S Web of ConferencesAn antenna for the elimination of in-band application interferences in the sub-6 GHz mid-frequency region is presented. The hybrid patch loaded with a complementary split ring resonator (CSRR) eliminates the in-band interference issue by introducing a ...
Varshney Atul +3 more
doaj +1 more source
Opportunties and challenges of tunnel FETs
2016 IEEE International Symposium on Circuits and Systems (ISCAS), 2016 Sustaining of Moore's Law over the next decade will require not only continued scaling of the physical dimensions of transistors but also performance improvement and aggressive reduction in power consumption. Hetero-junction Tunnel FET (TFET) have emerged as promising transistor candidates for supply voltage scaling down to sub-0.5V due to the ...
Rahul Pandey +2 more
openaire +2 more sources
Barrier‐Assisted Plasma Doping for Spatially Selective Resistance Engineering in MoS2 Transistors
Advanced Materials, EarlyView.Barrier‐assisted NH3 plasma doping enables damage‐free, spatially selective carrier modulation in monolayer MoS2 transistors. An ultrathin pV3D3/Al2O3 protective‐dielectric stack acts as a chemical filter that allows NHx radicals to reach the MoS2 surface while blocking plasma damage. This process achieves a high electron concentration of 4.3 × 1013 cm−
Inseong Lee +15 more
wiley +1 more source
Tracking sic FET developments with a FET simulator
, 2000 SiC FETs promise high voltage working, high output power and a high impedance level for easy matching in applications at low gigahertz freque cies.RF SiC FETs development has bee supported by practical investigation of dispersio using a pulsed I(V)measurement system,a d by relating the multi-bias S -parameter behaviour of the devices to their material ...
Ladbrooke, P.H., Bridge, J.P.
openaire +2 more sources
, 2020 Az egyik legelterjedtebb orvosi képalkotó eljárás a PET, melyet CT-vel kombinálva tumor diagnosztikában alkalmaznak. A [18F]FET radiogyógyszer használatával az agytumor feltárások során pontosabb eredményeket kaptak az eddigieknél.
Darcsi, Georgina
core
Advanced Materials, EarlyView.We show that sol‐gel‐fractured indium–magnesium oxide combines deep‐ultraviolet responsivity, high carrier mobility, and an excellent memory dynamic range. This unique materials platform enables deep‐ultraviolet long‐afterglow light‐emitting devices with multifunctional integration.
Zhongshi Ju +9 more
wiley +1 more source
A Universal van der Waals Tunneling Injector for Monolayer CMOS
Advanced Materials, EarlyView.A universal van der Waals injector unlocks polarity‐flexible tunneling contacts for monolayer CMOS. SnSe2, an intrinsically degenerate 2D semiconductor, establishes polarity‐specific band alignments with both WSe2 and MoS2 channels, enabling steep switching, high on/off ratios, and a unified route to low‐power 2D logic.
Hanbin Cho +17 more
wiley +1 more source