Results 121 to 130 of about 141,245 (296)

Photon Avalanching Nanoparticles: The Next Generation of Upconverting Nanomaterials?

Advanced Functional Materials, EarlyView.
This Perspective outlines the mechanistic foundations that enable photon‐avalanche (PA) behavior in lanthanide nanomaterials and contrasts them with emerging application spaces and forward‐looking design strategies. By bridging threshold engineering, energy‐transfer dynamics, and materials engineering, we provide a coherent roadmap for advancing the ...
Kimoon Lee, Yunseo Kim, Hyeong‐ku Jo, Dongjoon Yoon, Byeonghyeok Im, WonJeong Yu, Eui‐Rim On, Changhwan Lee   +7 more
wiley   +1 more source

Constant-amplitude, frequency- independent phase shifter [PDF]

, 1971
Electronic circuit using operational amplifiers provides output with constant phase shift amplitude, with respect to sinusoidal input, over wide range of frequencies. New circuit includes field effect transistor, Q, operational amplifiers, A1 and A2, and
Deboo, G. J.
core   +1 more source

Bio‐Inspired Multimodal Hardware Front‐End Enabled by 2D Floating‐Gate Memory for UAV Perception

Advanced Functional Materials, EarlyView.
A MoS2/h‐BN /graphene floating‐gate memory underpins a bio‐inspired multimodal front end that integrates visual, inertial, and airflow cues. A 4 × 4 FG memory array encodes temporal intensity differences, while IMU‐ and airflow‐driven threshold modulation suppresses self‐motion artifacts, enabling fast, low‐power, robust autonomous UAV tracking and ...
Lianghao Guo, Yue Cheng, Cong Li, Xiaoyu Guo, Jiankai Yin, Dadong Fan, Zhenyu Xu, Chenyu Tang, Arokia Nathan, Shuo Gao, Li Tao, Luigi G. Occhipinti   +11 more
wiley   +1 more source

Multi‐Scale Interface Engineering of MXenes for Multifunctional Sensory Systems

Advanced Functional Materials, EarlyView.
MXenes, as two‐dimensional transition metal carbides and nitrides, demonstrate remarkable capabilities for multifunctional sensing applications. This review systematically examines multi‐scale interface engineering approaches that enhance sensing performance, enable diverse detection functionalities, and improve system‐level compatibility in MXene ...
Jiaying Liao, Sin‐Yi Pang, Jianhua Hao
wiley   +1 more source

Atomic Layer Deposition in Transistors and Monolithic 3D Integration

Advanced Functional Materials, EarlyView.
Transistors are fundamental building blocks of modern electronics. This review summarizes recent progress in atomic layer deposition (ALD) for the synthesis of two‐dimensional (2D) metal oxides and transition‐metal dichalcogenides (TMDCs), with particular emphasis on their enabling role in monolithic three‐dimensional (M3D) integration for next ...
Yue Liu, Taoyu Zou, Cheng‐Yan Xu, Liang Zhen, Yang Li, Yong‐Young Noh   +5 more
wiley   +1 more source

MOSFET analog memory circuit achieves long duration signal storage [PDF]

, 1966
Memory circuit maintains the signal voltage at the output of an analog signal amplifier when the input signal is interrupted or removed. The circuit uses MOSFET /Metal Oxide Semiconductor Field Effect Transistor/ devices as voltage-controlled switches ...

core   +1 more source

Multi‐Functional ZnO–Te Heterojunction Devices Enabling Compact Frequency Quadrupler

Advanced Functional Materials, EarlyView.
Wafer‐scale ZnO–Te heterojunction devices featuring tunable double negative differential transconductance (D‐NDT) are demonstrated at ≤ 200°C. Leveraging this unique characteristic, a single‐stage frequency quadrupler is realized, achieving a 64%–75% reduction in device count.
Jae Hyeon Jun, Byeong Gwan Kim, Min Seo Kang, Ui Gwan Shin, Minjae Kim, Kiyung Kim, Hae‐Won Lee, Yongsu Lee, Byoung Hun Lee   +8 more
wiley   +1 more source

Ultraprecise Detection of Influenza Virus by Antibody-Modified Graphene Transistors

Sensors
Over the past decade, the large-scale spread of influenza viruses has posed an increasing burden on public health. The effective screening of influenza agents requires a fast, precise, on-site and easy-to-operate method.
Gang Wang, Mingming Zhang, Minghua Zhu, Tengfei Zhang, Xueqin Qian, Yili Liu, Xinye Ma, Changhao Dai, Dacheng Wei, Zhaoqin Zhu, Juntao Sun, Mingquan Guo   +11 more
doaj   +1 more source

Development of a HgCdTe photomixer and impedance matched GaAs FET amplifier [PDF]

A research program for the development of a 10.6 micron HgCdTe photodiode/GaAs field effect transistor amplifier package for use at cryogenic temperatures (77k).
Paulauskas, W. A., Shanley, J. F., Taylor, D. R.   +2 more
core   +1 more source

Critical Role of Polymer Gate Dielectrics on the Charge Carrier Transport in Perovskite Field‐Effect Transistors

Advanced Functional Materials, EarlyView.
Charge transport in 2D tin perovskite FETs is shown to be governed by dielectric interface behavior. Polar polymer dielectrics induce dipolar disorder that localizes carriers, whereas nonpolar polymers suppress trapping and enable superior charge transport, ensuring stable and reliable transistor operation. ABSTRACT Understanding the role of interfaces
Chongyao Li, Zhitian Ling, Pawel Czulkin, Paul W. M. Blom, Wojciech Pisula, Tomasz Marszalek   +5 more
wiley   +1 more source