Results 151 to 160 of about 48,774 (300)

Barrier‐Assisted Plasma Doping for Spatially Selective Resistance Engineering in MoS2 Transistors

open access: yesAdvanced Materials, EarlyView.
Barrier‐assisted NH3 plasma doping enables damage‐free, spatially selective carrier modulation in monolayer MoS2 transistors. An ultrathin pV3D3/Al2O3 protective‐dielectric stack acts as a chemical filter that allows NHx radicals to reach the MoS2 surface while blocking plasma damage. This process achieves a high electron concentration of 4.3 × 1013 cm−
Inseong Lee   +15 more
wiley   +1 more source

Energy Band Alignment and Electro‐Optical Behavior of Nearly Unstrained Monolayer MoS2 Heterostructures With GaN

open access: yesAdvanced Materials Interfaces, EarlyView.
Large size (∼100 µm) monolayer MoS2 grown by LPI‐CVD on n‐GaN exhibit a high n‐type doping, very low strain, and a type‐I band alignment at MoS2/GaN interface. Photocurrent measurements under illumination with photon energies from ∼2 to ∼5 eV show superior electro‐optical performances of these MoS2/n‐GaN heterojunctions as compared to Ni/n‐GaN devices ...
Salvatore Ethan Panasci   +12 more
wiley   +1 more source

Multilayered Digital Microfluidic Chip for Cell‐Based Assays

open access: yesAdvanced Materials Interfaces, EarlyView.
A multilayered digital microfluidic (mDMF) chip architecture is introduced to improve throughput and robustness in cell‐based assays. By multilayering electrode components and dielectric layers on glass, this design significantly reduces actuation voltage, maintains reliability, and enables expansion of the operational area with minimum current leakage.
Mert Ozden   +2 more
wiley   +1 more source

Bandgap‐Dependent Band‐to‐Band Tunneling in Carbon Nanotube Transistors

open access: yesAdvanced Materials Interfaces, EarlyView.
We systematically investigate bandgap‐dependent BTBT in SWCNT transistors by comparing wide‐bandgap (6,5) (Eg≈1.13 eV), medium‐bandgap HiPco, and narrow‐bandgap Arc‐discharge (Eg≈0.59 eV) SWCNT networks. The narrow‐bandgap networks show stronger BTBT, higher off‐state leakage, and lower on/off ratio, while wide‐bandgap (6,5) devices suppress BTBT and ...
Yuxiang Wei   +10 more
wiley   +1 more source

Grafted Low‐Leakage Si/AlN p‐n Diodes Enabled by Fluorinated AlN Interface

open access: yesAdvanced Materials Interfaces, EarlyView.
This work demonstrates a fluorination‐based interface engineering strategy that transforms oxygen‐terminated AlN surfaces into fluorine‐terminated interfaces for grafted p‐Si/n‐AlN diodes. By combining pseudo‐ALE oxide removal, XeF2 fluorination, and ultrathin SiNx stabilization, the engineered interface suppresses defect‐assisted reverse leakage by ...
Yi Lu   +21 more
wiley   +1 more source

Cation‐π Interaction‐Based Biointerface for Low‐Cost PD‐1 Detection Toward NSCLC Immunotherapy Monitoring

open access: yesAdvanced Materials Interfaces, EarlyView.
A cation‐π interaction‐based biointerface is engineered on a CNT‐FET for label‐free detection of PD‐1. PD‐1 monoclonal antibodies are orientedly immobilized via cation‐π interactions between PCz‐wrapped semiconducting single‐walled carbon nanotubes and the Fc region of the monoclonal antibody.
Chunmin Jia   +8 more
wiley   +1 more source

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