Results 251 to 260 of about 50,888 (308)

High-Precision Field- Effect Transistor Biosensor for Analyzing Differential Effects of Anti-Cancer Drugs on Cancerous and Non-Cancerous Cells. [PDF]

Biosensors (Basel)
Li C, Hu C, Li L, He F, Li X.
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A Negative Capacitance Field-Effect Transistor with High Rectification Efficiency for Weak-Energy 2.45 GHz Microwave Wireless Transmission. [PDF]

Micromachines (Basel)
Tang H, Tang A, Liu W, Huang J, Song J, Sun W.   +5 more
europepmc   +1 more source

Rapid, Selective, and Ultra-Sensitive Field Effect Transistor-Based Detection of Escherichia coli. [PDF]

Materials (Basel)
Zaidan L, Novodchuk I, H Xu A, Nica A, Takaloo S, Lloyd C, Karimi R, Sanderson J, Bajcsy M, Yavuz M.   +9 more
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Field-Effect Transistors

, 2017
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Ambipolar Field Effect Transistor

MRS Proceedings, 1985
AbstractThe characteristics of a thin-film transistor using an amorphous-silicon film are presented. The appearance of electron and hole channels is made possible by ohmic source and drain contacts. A theoretical model explains the phenomena.
Hans Pfleiderer, Wilhelm Kusian
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Photovoltage field-effect transistors

Nature, 2017
The detection of infrared radiation enables night vision, health monitoring, optical communications and three-dimensional object recognition. Silicon is widely used in modern electronics, but its electronic bandgap prevents the detection of light at wavelengths longer than about 1,100 nanometres. It is therefore of interest to extend the performance of
Valerio, Adinolfi, Edward H, Sargent
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Unipolar "Field-Effect" Transistor

Proceedings of the IRE, 1953
Unipolar "field-effect" transistors of a type suggested by W. Shockley have been constructed and tested. The idealized theory of Shockley has been extended to cover the actual geometries involved, and design nomographs are presented. It is found that these structures can be designed in such a way as to yield a negative resistance at the input terminals.
G. C. DACEY, I. M. ROSS
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Field-effect transistor applications

1955 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, 1955
A field effect transistor1 is a unipolar device, distinguishable from a junction transistor in the following two ways: 1. the current flow is carried predominantly by one type of carrier alone; and 2. the electric field intensity is relatively high, thus the current flow is caused by field drift instead of by diffusion. Fig. 1(A) shows the construction
Chaang Huang, Melvin Marshall, B. H. White   +2 more
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Field-effect transistors

2007
Principles of field-effect transistors and their various types are reviewed. Their physical properties are surveyed, and a brief outline of present device technology is given.
Umesh K. Mishra, Jasprit Singh
  +4 more sources

A Unipolar “Field-Effect” Transistor

Proceedings of the IRE, 1952
The theory for a new form of transistor is presented. This transistor is of the "field-effect" type in which the conductivity of a layer of semiconductor is modulated by a transverse electric field. Since the amplifying action involves currents carried pre-dominantly by one kind of carrier, the name "unipolar" is proposed to distinguish these ...
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