Results 31 to 40 of about 50,888 (308)
Metallic CNT Tolerant Field Effect Transistor Using Dielectrophoresis
IEEE Open Journal of Nanotechnology, 2023 The performance of silicon-based transistors is reaching its limit, and new materials like carbon nanotubes (CNTs) have started emerging to replace them in electronic products.
Shobhit Kareer, Jeongwon Park
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Sensitivity of Field-Effect Transistor-Based Terahertz Detectors
Sensors, 2021 This paper presents an overview of the different methods used for sensitivity (i.e., responsivity and noise equivalent power) determination of state-of-the-art field-effect transistor-based THz detectors/sensors. We point out that the reported result may
Elham Javadi +5 more
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A Micro-Machined Microphone Based on a Combination of Electret and Field-Effect Transistor
Sensors, 2015 Capacitive-type transduction is now widely used in MEMS microphones. However, its sensitivity decreases with reducing size, due to decreasing air gap capacitance.
Kumjae Shin +3 more
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Applications of Transistor-Based Biochemical Sensors
Biosensors, 2023 Transistor-based biochemical sensors feature easy integration with electronic circuits and non-invasive real-time detection. They have been widely used in intelligent wearable devices, electronic skins, and biological analyses and have shown broad ...
Qiya Gao, Jie Fu, Shuang Li, Dong Ming
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Advanced Functional Materials, EarlyView.A lack of standard approaches for testing and reporting the performance of metal halide perovskites and organic semiconductor radiation detectors has resulted in inconsistent interpretation of performance parameters, impeding progress in the field. This Perspective recommends key metrics and experimental details, which are suggested for reporting in ...
Jessie A. Posar +8 more
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Multilayer MoS2 Schottky Barrier Field Effect Transistor
IEEE Open Journal of NanotechnologyThe miniaturization of electronic components remains a critical focus in electronics, particularly in transistor design, with research exploring new solutions such as the use of two-dimensional materials in Schottky Barrier Field Effect Transistors (SB ...
Sebastiano De Stefano +7 more
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A Monolithic 3-Dimensional Static Random Access Memory Containing a Feedback Field Effect Transistor
Micromachines, 2022 A monolithic three-dimensional integrated static random access memory containing a feedback field effect transistor (M3D-FBFET-SRAM) was proposed. The M3D-FBFET-SRAM cell consists of one metal oxide semiconductor field effect transistor (MOSFET) and one ...
Jong Hyeok Oh, Yun Seop Yu
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Advanced Functional Materials, EarlyView.This work discusses the use of blended channel materials in OECTs. It explores how mixing glycolated and alkoxylated polymers in various ratios offers a simpler and more efficient route to tuning OECT properties. The performance of the polymer blends is compared to the corresponding copolymers, demonstrating similar OECT characteristics, swelling ...
Lize Bynens +14 more
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High Ion/Ioff current ratio graphene field effect transistor: the role of line defect
Beilstein Journal of Nanotechnology, 2015 The present paper casts light upon the performance of an armchair graphene nanoribbon (AGNR) field effect transistor in the presence of one-dimensional topological defects. The defects containing 5–8–5 sp2-hybridized carbon rings were placed in a perfect
Mohammad Hadi Tajarrod +1 more
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Advanced Functional Materials, EarlyView.Novel ferrocene derivatives (e.g., FcPhc2) are used as an ultrathin layer hole‐blocking layer, reducing hole injection from the Ag contact. This results in an ultralow noise spectral density of 1.2 × 10−14 A Hz−1/2, and a high specific detectivity of 8.1 × 1012 Jones at −0.5 V.
Eunyoung Hong +16 more
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