Results 31 to 40 of about 48,774 (300)

Facilitating field-effect transistor based (bio)sensor research with a miniaturized bipotentiostat [PDF]

open access: yes, 2022
Field-effect transistors (FETs) have been around for more than half a century and are at the heart of everyday electronics, but field-effect transistor based (bio)sensors are an emerging field with a huge potential that is yet to be explored.
Maria, Wróblewska   +4 more
core   +1 more source

Fabrication of a submicron-channel organic field-effect transistor using a controllable electrospun single fibre as a shadow mask [PDF]

open access: yes, 2011
We demonstrate a simple and versatile method for the fabrication of a submicron channel for an organic field-effect transistor (OFET) using a single electrospun fibre as a shadow mask.
Sakai, H   +5 more
core   +1 more source

Hysteresis Behavior of the Donor–Acceptor-Type Ambipolar Semiconductor for Non-Volatile Memory Applications

open access: yesMicromachines, 2021
Donor–acceptor-type organic semiconductor molecules are of great interest for potential organic field-effect transistor applications with ambipolar characteristics and non-volatile memory applications. Here, we synthesized an organic semiconductor, PDPPT-
Young Jin Choi   +6 more
doaj   +1 more source

State of the art and perspectives of graphene field-effect transistor [PDF]

open access: yes, 2022
openAnalisi scientifica dei transistor a effetto di campo in grafene. L’elaborato segue lo sviluppo e il percorso di vita in ambito elettronico di questo conosciuto materiale dalle ottime potenzialità a prima vista, ma con diverse criticità e ...
CESCHIN, MATTEO
core  

Metallic CNT Tolerant Field Effect Transistor Using Dielectrophoresis

open access: yesIEEE Open Journal of Nanotechnology, 2023
The performance of silicon-based transistors is reaching its limit, and new materials like carbon nanotubes (CNTs) have started emerging to replace them in electronic products.
Shobhit Kareer, Jeongwon Park
doaj   +1 more source

EFFECT OF FERRO ELECTRIC THICKNESS ON NEGATIVE CAPACITANCE FET (NCFET)

open access: yesInternational Islamic University Malaysia Engineering Journal, 2020
Conventional Field Effect Transistor (FET) are well known to require at least 60mV/decade at 300K change in the channel potential to change the current by a factor of 10. Due to this, 60mV/decade becomes the bottleneck of this day transistor.
Muhaimin Bin Mohd Hashim   +2 more
doaj   +1 more source

Radiation-sensitive field effect transistor response to gamma-ray irradiation [PDF]

open access: yesNuclear Technology and Radiation Protection, 2011
The influence of gate bias during gamma-ray irradiation on the threshold voltage shift of radiation sensitive p-channel MOSFETs determined on the basis of transfer characteristics in saturation has been investigated.
Pejović Milić M.   +2 more
doaj   +1 more source

Neuroevolution-Based Efficient Field Effect Transistor Compact Device Models

open access: yesIEEE Access, 2021
Artificial neural networks (ANN) and multilayer perceptrons (MLP) have proved to be efficient in terms of designing highly accurate semiconductor device compact models (CM).
Ya-Wen Ho   +6 more
doaj   +1 more source

Density of trap states in a polymer field-effect transistor [PDF]

open access: yes, 2014
We report a more accurate method to determine the density of trap states in a polymer field-effect transistor. In the approach, we describe in this letter, we take into consideration the sub-threshold behavior in the calculation of the density of trap ...
Ha, Tae-Jun   +7 more
core   +1 more source

Tunnel Field-Effect Transistor With Segmented Channel

open access: yesIEEE Journal of the Electron Devices Society, 2019
A tunnel field-effect transistor with segmented channels (Seg-TFET) on a corrugated substrate is proposed. The Seg-TFET takes advantage of using three stripes and the selective contact configuration to define the direction of current, and thereby its ...
Jaesoo Park, Changhwan Shin
doaj   +1 more source

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