Results 251 to 260 of about 529,949 (323)

‘Oxygen Bound to Magnesium’ as High Voltage Redox Center Causes Sloping of the Potential Profile in Mg‐Doped Layered Oxides for Na‐Ion Batteries

open access: yesAdvanced Functional Materials, EarlyView.
Na‐ion batteries ‐ Impact of doping on the oxygen redox: The sloping potential of NaMg0.1Ni0.4Mn0.5O2 above 4.0 V is caused by a new redox center (arising from the ‘O bound to Mg’), having a higher potential but being more irreversible compared to the ‘O bound to Ni’.
Yongchun Li   +12 more
wiley   +1 more source

Tuning the Electronic Structure and Spin State of Fe─N─C Catalysts Using an Axial Oxygen Ligand and Fe Clusters for High‐Efficiency Rechargeable Zinc–Air Batteries

open access: yesAdvanced Functional Materials, EarlyView.
A FeN4─O/Clu@NC‐0.1Ac catalyst containing atomically‐dispersed FeN4─O sites (medium‐spin Fe2+) and Fe clusters delivered a half‐wave potential of 0.89 V for ORR and an overpotential of 330 mV at 10 mA cm−2 for OER in 0.1 m KOH. When the catalyst was used in a rechargeable Zn–air battery, a power density of 284.5 mW cm−2 was achieved with excellent ...
Yongfang Zhou   +8 more
wiley   +1 more source

Light-induced fine-tuning of optical cavities for organic optoelectronic devices. [PDF]

open access: yesNat Commun
Xing S   +23 more
europepmc   +1 more source

Single Solid‐State Ion Channels as Potentiometric Nanosensors

open access: yesAdvanced Functional Materials, EarlyView.
Single gold nanopores functionalized with mixed self‐assembled monolayers act as solid‐state ion channels for direct, selective potentiometric sensing of inorganic ions (Ag⁺). The design overcomes key miniaturization barriers of conventional ion‐selective electrodes by combining low resistivity with suppressed loss of active components, enabling robust
Gergely T. Solymosi   +4 more
wiley   +1 more source

Fine-tuning ILC2s: CD48 Pumps Up the Volume. [PDF]

open access: yesAm J Respir Cell Mol Biol
Huang YA, Doherty TA.
europepmc   +1 more source

Universal Neuromorphic Element: NbOx Memristor with Co‐Existing Volatile, Non‐Volatile, and Threshold Switching

open access: yesAdvanced Functional Materials, EarlyView.
A W/NbOx/Pt memristor demonstrates the coexistence of volatile, non‐volatile, and threshold switching characteristics. Volatile switching serves as a reservoir computing layer, providing dynamic short‐term processing. Non‐volatile switching, stabilized through ISPVA, improves reliable long‐term readout. Threshold switching operates as a leaky integrate
Ungbin Byun, Hyesung Na, Sungjun Kim
wiley   +1 more source

The impact of fine-tuning LLMs on the quality of automated therapy assessed by digital patients. [PDF]

open access: yesNpj Ment Health Res
Yosef S   +5 more
europepmc   +1 more source

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