Results 171 to 180 of about 11,328 (210)
Some of the next articles are maybe not open access.
Flexible Nanoscale High-Performance FinFETs
ACS Nano, 2014With the emergence of the Internet of Things (IoT), flexible high-performance nanoscale electronics are more desired. At the moment, FinFET is the most advanced transistor architecture used in the state-of-the-art microprocessors. Therefore, we show a soft-etch based substrate thinning process to transform silicon-on-insulator (SOI) based nanoscale ...
Sevilla, Galo T. +5 more
openaire +3 more sources
2019 16th International Conference on Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology (ECTI-CON), 2019
This paper presents magnetic sensor that uses FinFET structure. It is n channel FinFET with two separate contacts on the fin sides of drain that detects the vertical magnetic field. The gate length, fin height and fin width are 15, 15 and 5 nm, respectively.
Chanvit Pamonchom +4 more
openaire +1 more source
This paper presents magnetic sensor that uses FinFET structure. It is n channel FinFET with two separate contacts on the fin sides of drain that detects the vertical magnetic field. The gate length, fin height and fin width are 15, 15 and 5 nm, respectively.
Chanvit Pamonchom +4 more
openaire +1 more source
Effective drive current in steep slope FinFET (vs. conventional FinFET)
Applied Physics Letters, 2017With the negative capacitance (NC) effect of ferroelectric materials, a sub-60-mV/decade sub-threshold slope in a conventional field-effect transistor has been theoretically and experimentally demonstrated. In order to utilize the NC for complementary metal-oxide-semiconductor logic device applications, it is necessary to closely examine various ...
Eunah Ko, Changhwan Shin
openaire +1 more source
Improving bulk FinFET DC performance in comparison to SOI FinFET
Microelectronic Engineering, 2009The implementation of FinFET structure in bulk silicon wafers is very attractive due to low-cost technology and compatibility with standard bulk CMOS in comparison with silicon-on-insulator (SOI) FinFET. SOI and bulk FinFET were analyzed by a three-dimensional numerical device simulator.
Jovanović, Vladimir +2 more
openaire +2 more sources
ECS Transactions, 2017
FinFET has been emerged as the leading device architecture for continuing CMOS scaling. It has entered mainstream CMOS manufacturing since 22nm node. In this paper, I will provide an overview on the challenges associated with CMOS scaling and articulate how FinFET circumvents those scaling challenges.
openaire +1 more source
FinFET has been emerged as the leading device architecture for continuing CMOS scaling. It has entered mainstream CMOS manufacturing since 22nm node. In this paper, I will provide an overview on the challenges associated with CMOS scaling and articulate how FinFET circumvents those scaling challenges.
openaire +1 more source
Stochastic Matching Properties of FinFETs
IEEE Electron Device Letters, 2006For the first time, an experimental assessment of the intradie mismatch properties of a FinFET technology is presented. By applying the analysis to different combinations of gate stack materials, it is shown that the best results are obtained with undoped fins, with matching performances on par or even superior to those of planar MOSFETs.
Gustin, C. +6 more
openaire +2 more sources
2010
Fin-type field-effect transistors (FinFETs) are promising substitutes for bulk CMOS at the nanoscale. FinFETs are double-gate devices. The two gates of a FinFET can either be shorted for higher perfomance or independently controlled for lower leakage or reduced transistor count. This gives rise to a rich design space.
Prateek Mishra +2 more
openaire +1 more source
Fin-type field-effect transistors (FinFETs) are promising substitutes for bulk CMOS at the nanoscale. FinFETs are double-gate devices. The two gates of a FinFET can either be shorted for higher perfomance or independently controlled for lower leakage or reduced transistor count. This gives rise to a rich design space.
Prateek Mishra +2 more
openaire +1 more source
ECS Transactions, 2007
A FinFET device was simulated using recursive Green's functions through Dyson's equation solved self-consistently with Poisson equation. The dimensions of the device are such that the transport is forced to be coherent through the whole structure. The results show that at the coherent regime the standard MOS transistor loses appropriate gate action and
openaire +1 more source
A FinFET device was simulated using recursive Green's functions through Dyson's equation solved self-consistently with Poisson equation. The dimensions of the device are such that the transport is forced to be coherent through the whole structure. The results show that at the coherent regime the standard MOS transistor loses appropriate gate action and
openaire +1 more source
Variability Effects in FinFET Transistors and Emerging NC-FinFET
2021 International Conference on IC Design and Technology (ICICDT), 2021Aniket Gupta +3 more
openaire +1 more source
2013
This book reviews a range of quantum phenomena in novel nanoscale transistors called FinFETs, including quantized conductance of 1D transport, single electron effect, tunneling transport, etc. The goal is to create a fundamental bridge between quantum FinFET and nanotechnology to stimulate readers' interest in developing new types of semiconductor ...
openaire +1 more source
This book reviews a range of quantum phenomena in novel nanoscale transistors called FinFETs, including quantized conductance of 1D transport, single electron effect, tunneling transport, etc. The goal is to create a fundamental bridge between quantum FinFET and nanotechnology to stimulate readers' interest in developing new types of semiconductor ...
openaire +1 more source