Results 151 to 160 of about 1,344,268 (333)
Control of Ferromagnetism of Vanadium Oxide Thin Films by Oxidation States
The nonstoichiometric VOx exhibits a distinct ferromagnetic hysteresis loop and demonstrates a high magnetic susceptibility (χ=dMdH$ = \frac{{dM}}{{dH}}\;$∼10). Micromagnetic simulations show the results of the “partial volume fraction ferromagnetic phase model” for VOx/Co/Pt structure.
Kwonjin Park+9 more
wiley +1 more source
On the consistency of finite-difference methods for the solution of initial-value problems
M. N. Spijker
openalex +1 more source
On the Convergence of the Finite Difference Method for Nonlinear Ordinary Boundary Value Problems [PDF]
Wolf‐Jürgen Beyn
openalex +1 more source
Scaling‐Up of Structural Superlubricity: Challenges and Opportunities
At increasing length‐scales, structural superlubricity (SSL) faces challenges from physical and chemical energy dissipation pathways. This study reviews recent experimental and theoretical progress on these challenges facing the scaling‐up of SSL, as well as perspectives on future directions for realizing and manipulating macroscale superlubricity ...
Penghua Ying+4 more
wiley +1 more source
Photoswitchable Conductive Metal–Organic Frameworks
A conductive material where the conductivity can be modulated remotely by irradiation with light is presented. It is based on films of conductive metal–organic framework type Cu3(HHTP)2 with embedded photochromic molecules such as azobenzene, diarylethene, spiropyran, and hexaarylbiimidazole in the pores.
Yidong Liu+5 more
wiley +1 more source
A fully coupled hybrid lattice Boltzmann and finite difference method-based study of transient electrokinetic flows. [PDF]
Basu HS, Bahga SS, Kondaraju S.
europepmc +1 more source
A finite-difference method for parabolic differential equations with mixed derivatives [PDF]
Jan Krzysztof Kowalski
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Gate‐Tunable Hole Transport in In‐Plane Ge Nanowires by V‐Groove Confined Selective Epitaxy
Ge nanowires are promising for hole spin‐based quantum processors, requiring direct integration onto Si wafers. This work introduces V‐groove‐confined selective epitaxy for in‐plane nanowire growth on Si. Structural and low‐temperature transport measurements confirm their high crystalline quality, gate‐tunable hole densities, and mobility.
Santhanu Panikar Ramanandan+11 more
wiley +1 more source